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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TPHR9203PL1,LQUMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage |
3,217 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 0.92mOhm @ 50A, 10V | 2.1V @ 500µA | 81 nC @ 10 V | ±20V | 7540 pF @ 15 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | |
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TPN2010FNH,L1QMOSFET N-CH 250V 5.6A 8TSON Toshiba Semiconductor and Storage |
3,661 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount |
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TPH3R70APL,L1QMOSFET N-CH 100V 90A 8SOP Toshiba Semiconductor and Storage |
3,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
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TPH5R906NH,L1QMOSFET N-CH 60V 28A 8SOP Toshiba Semiconductor and Storage |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount |
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TK55S10N1,LQMOSFET N-CH 100V 55A DPAK Toshiba Semiconductor and Storage |
2,277 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | 175°C (TJ) | Surface Mount |
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TK4R3E06PL,S1XMOSFET N-CH 60V 80A TO220 Toshiba Semiconductor and Storage |
2,324 | - |
RFQ |
Ficha técnica |
Tube | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | 175°C (TJ) | Through Hole |
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TK7R4A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,971 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 7.4mOhm @ 25A, 10V | 2.5V @ 500µA | 44 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 42W (Tc) | 175°C | Through Hole |
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2SK2231(TE16R1,NQ)MOSFET N-CH 60V 5A PW-MOLD Toshiba Semiconductor and Storage |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 12 nC @ 10 V | ±20V | 370 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | Surface Mount |
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TK7A60W5,S5VXMOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage |
2,380 | - |
RFQ |
Ficha técnica |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 650mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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TJ200F04M3L,LXHQMOSFET P-CH 40V 200A TO220SM Toshiba Semiconductor and Storage |
2,772 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3V @ 1mA | 460 nC @ 10 V | +10V, -20V | 1280 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount |
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TK160F10N1,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
2,241 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 10V | 2.4mOhm @ 80A, 10V | 4V @ 1mA | 121 nC @ 10 V | ±20V | 8510 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount |
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TPW4R008NH,L1QMOSFET N-CH 80V 116A 8DSOP Toshiba Semiconductor and Storage |
2,948 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount |
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TK100E10N1,S1XMOSFET N-CH 100V 100A TO220 Toshiba Semiconductor and Storage |
3,908 | - |
RFQ |
Ficha técnica |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 255W (Tc) | 150°C (TJ) | Through Hole |
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SSM3J15FV,L3FMOSFET P-CH 30V 100MA VESM Toshiba Semiconductor and Storage |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | π-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1 pF @ 3 V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SSM3J64CTC,L3FMOSFET P-CH 12V 1A CST3C Toshiba Semiconductor and Storage |
2,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVII | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 1A (Ta) | 1.2V, 4.5V | 370mOhm @ 600mA, 4.5V | 1V @ 1mA | - | ±10V | 50 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
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SSM3K09FU,LFMOSFET N-CH 30V 400MA USM Toshiba Semiconductor and Storage |
2,607 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | π-MOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 400mA (Ta) | 3.3V, 10V | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | - | ±20V | 20 pF @ 5 V | - | 150mW (Ta) | 150°C | Surface Mount |
|
SSM3J134TU,LFMOSFET P-CH 20V 3.2A UFM Toshiba Semiconductor and Storage |
3,508 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
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SSM6J502NU,LFMOSFET P-CH 20V 6A 6UDFNB Toshiba Semiconductor and Storage |
3,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 23.1mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | ±8V | 1800 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
SSM6J216FE,LFMOSFET P-CHANNEL 12V 4.8A ES6 Toshiba Semiconductor and Storage |
2,306 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 32mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | ±8V | 1040 pF @ 12 V | - | 700mW (Ta) | 150°C | Surface Mount |
|
SSM6K407TU,LFMOSFET N-CH 60V 2A UF6 Toshiba Semiconductor and Storage |
3,890 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
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