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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM3J352F,LFMOSFET P-CH 20V 2A S-MINI Toshiba Semiconductor and Storage |
3,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.8V, 10V | 110mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1 nC @ 4.5 V | ±12V | 210 pF @ 10 V | - | 1.2W (Ta) | 150°C | Surface Mount |
|
SSM3J140TU,LFMOSFET P-CH 20V 4.4A UFM Toshiba Semiconductor and Storage |
3,426 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | +6V, -8V | 1800 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
|
TPN11003NL,LQMOSFET N CH 30V 11A 8TSON-ADV Toshiba Semiconductor and Storage |
2,947 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Tc) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5 nC @ 10 V | ±20V | 660 pF @ 15 V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount |
|
TJ10S04M3L,LXHQMOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
3,171 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | 175°C | Surface Mount |
|
|
TJ8S06M3L,LXHQMOSFET P-CH 60V 8A DPAK Toshiba Semiconductor and Storage |
2,531 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | - | 27W (Tc) | 175°C | Surface Mount |
|
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TK15S04N1L,LXHQMOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage |
3,562 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | 175°C | Surface Mount |
|
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TK7S10N1Z,LXHQMOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | 175°C | Surface Mount |
|
TK25S06N1L,LXHQMOSFET N-CH 60V 25A DPAK Toshiba Semiconductor and Storage |
2,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Ta) | 4.5V, 10V | 36.8mOhm @ 12.5A, 4.5V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | 175°C | Surface Mount |
|
|
TJ20S04M3L,LXHQMOSFET P-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
2,949 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | 175°C | Surface Mount |
|
TPN2R903PL,L1QMOSFET N-CH 30V 70A 8TSON Toshiba Semiconductor and Storage |
2,794 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 630mW (Ta), 75W (Tc) | 175°C | Surface Mount |
|
|
TJ15S06M3L,LXHQMOSFET P-CH 60V 15A DPAK Toshiba Semiconductor and Storage |
3,160 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | 175°C | Surface Mount |
|
TPH11003NL,LQMOSFET N CH 30V 32A 8SOP Toshiba Semiconductor and Storage |
3,428 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5 nC @ 10 V | ±20V | 660 pF @ 15 V | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount |
|
TK40S06N1L,LXHQMOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage |
2,334 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | 175°C | Surface Mount |
|
|
TPN1600ANH,L1QMOSFET N CH 100V 17A 8TSON-ADV Toshiba Semiconductor and Storage |
3,067 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 16mOhm @ 8.5A, 10V | 4V @ 200µA | 19 nC @ 10 V | ±20V | 1600 pF @ 50 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TPN7R006PL,L1QMOSFET N-CH 60V 54A 8TSON Toshiba Semiconductor and Storage |
2,233 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 27A, 10V | 2.5V @ 200µA | 20 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 630mW (Ta), 75W (Tc) | 175°C | Surface Mount |
|
TPN4R806PL,L1QMOSFET N-CH 60V 72A 8TSON Toshiba Semiconductor and Storage |
2,987 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 72A (Tc) | 4.5V, 10V | 3.5mOhm @ 36A, 10V | 2.5V @ 300µA | 29 nC @ 10 V | ±20V | 2770 pF @ 30 V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount |
|
TP86R203NL,LQMOSFET N CH 30V 19A 8SOP Toshiba Semiconductor and Storage |
3,080 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 4.5V, 10V | 6.2mOhm @ 9A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TPN30008NH,LQMOSFET N-CH 80V 9.6A 8TSON Toshiba Semiconductor and Storage |
3,699 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.6A (Tc) | 10V | 30mOhm @ 4.8A, 10V | 4V @ 100µA | 11 nC @ 10 V | ±20V | 920 pF @ 40 V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TJ40S04M3L,LXHQMOSFET P-CH 40V 40A DPAK Toshiba Semiconductor and Storage |
2,119 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | 175°C | Surface Mount |
|
|
TJ30S06M3L,LXHQMOSFET P-CH 60V 30A DPAK Toshiba Semiconductor and Storage |
2,962 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | - | 68W (Tc) | 175°C | Surface Mount |
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