Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2719(F)

2SK2719(F)

MOSFET N-CH 900V 3A TO3P

Toshiba Semiconductor and Storage
3,480 -

RFQ

2SK2719(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 750 pF @ 25 V - 125W (Tc) 150°C (TJ) Through Hole
2SK2847(F)

2SK2847(F)

MOSFET N-CH 900V 8A TO3PIS

Toshiba Semiconductor and Storage
2,109 -

RFQ

2SK2847(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Ta) 10V 1.4Ohm @ 4A, 10V 4V @ 1mA 58 nC @ 10 V ±30V 2040 pF @ 25 V - 85W (Tc) 150°C (TJ) Through Hole
2SK2916(F)

2SK2916(F)

MOSFET N-CH 500V 14A TO3PIS

Toshiba Semiconductor and Storage
2,107 -

RFQ

2SK2916(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 400mOhm @ 7A, 10V 4V @ 1mA 58 nC @ 10 V ±30V 2600 pF @ 10 V - 80W (Tc) 150°C (TJ) Through Hole
2SK2917(F)

2SK2917(F)

MOSFET N-CH 500V 18A TO3PIS

Toshiba Semiconductor and Storage
2,208 -

RFQ

2SK2917(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 10A, 10V 4V @ 1mA 80 nC @ 10 V ±30V 3720 pF @ 10 V - 90W (Tc) 150°C (TJ) Through Hole
2SK2967(F)

2SK2967(F)

MOSFET N-CH 250V 30A TO3P

Toshiba Semiconductor and Storage
2,717 -

RFQ

2SK2967(F)

Ficha técnica

Tray - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 30A (Ta) 10V 68mOhm @ 15A, 10V 3.5V @ 1mA 132 nC @ 10 V ±20V 5400 pF @ 10 V - 150W (Tc) 150°C (TJ) Through Hole
2SK2993(TE24L,Q)

2SK2993(TE24L,Q)

MOSFET N-CH 250V 20A TO220SM

Toshiba Semiconductor and Storage
2,963 -

RFQ

2SK2993(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 105mOhm @ 10A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4000 pF @ 10 V - 100W (Tc) 150°C (TJ) Surface Mount
2SK2995(F)

2SK2995(F)

MOSFET N-CH 250V 30A TO3PIS

Toshiba Semiconductor and Storage
2,664 -

RFQ

2SK2995(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 30A (Ta) 10V 68mOhm @ 15A, 10V 3.5V @ 1mA 132 nC @ 10 V ±20V 5400 pF @ 10 V - 90W (Tc) 150°C (TJ) Through Hole
2SK3068(TE24L,Q)

2SK3068(TE24L,Q)

MOSFET N-CH 500V 12A TO220SM

Toshiba Semiconductor and Storage
2,430 -

RFQ

2SK3068(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2040 pF @ 10 V - 100W (Tc) 150°C (TJ) Surface Mount
2SK3127(TE24L,Q)

2SK3127(TE24L,Q)

MOSFET N-CH 30V 45A TO220SM

Toshiba Semiconductor and Storage
2,160 -

RFQ

2SK3127(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 10V 12mOhm @ 25A, 10V 3V @ 1mA 66 nC @ 10 V ±20V 2300 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
2SK3132(Q)

2SK3132(Q)

MOSFET N-CH 500V 50A TO3P

Toshiba Semiconductor and Storage
3,510 -

RFQ

2SK3132(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 50A (Ta) 10V 95mOhm @ 25A, 10V 3.4V @ 1mA 280 nC @ 10 V ±30V 11000 pF @ 10 V - 250W (Tc) 150°C (TJ) Through Hole
TPHR9203PL,L1Q

TPHR9203PL,L1Q

MOSFET N-CH 30V 150A 8SOP

Toshiba Semiconductor and Storage
2,730 -

RFQ

TPHR9203PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V - 2.1V @ 500µA 80 nC @ 10 V ±20V 7540 pF @ 15 V - 132W (Tc) 175°C (TJ) Surface Mount
TPH1R204PL,L1Q

TPH1R204PL,L1Q

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage
2,275 -

RFQ

TPH1R204PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.24mOhm @ 50A, 10V 2.4V @ 500µA 74 nC @ 10 V ±20V 7200 pF @ 20 V - 960mW (Ta), 132W (Tc) 175°C (TJ) Surface Mount
TPH1R204PB,L1Q

TPH1R204PB,L1Q

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage
2,262 -

RFQ

TPH1R204PB,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 6V, 10V 1.2mOhm @ 50A, 10V 3V @ 500µA 62 nC @ 10 V ±20V 5855 pF @ 20 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
2SK3565(Q,M)

2SK3565(Q,M)

MOSFET N-CH 900V 5A TO220SIS

Toshiba Semiconductor and Storage
2,284 -

RFQ

2SK3565(Q,M)

Ficha técnica

Bulk π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) 10V 2.5Ohm @ 3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1150 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
XPH4R714MC,L1XHQ

XPH4R714MC,L1XHQ

MOSFET P-CH 40V 60A 8SOP

Toshiba Semiconductor and Storage
3,933 -

RFQ

XPH4R714MC,L1XHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 60A (Ta) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.1V @ 1mA 160 nC @ 10 V +10V, -20V 5640 pF @ 10 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
TPH2010FNH,L1Q

TPH2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8SOP

Toshiba Semiconductor and Storage
2,025 -

RFQ

TPH2010FNH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 250 V 5.6A (Ta) 10V 198mOhm @ 2.8A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 100 V - 1.6W (Ta), 42W (Tc) 150°C (TJ) Surface Mount
TK65S04N1L,LQ

TK65S04N1L,LQ

MOSFET N-CH 40V 65A DPAK

Toshiba Semiconductor and Storage
2,872 -

RFQ

TK65S04N1L,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 10V 4.3mOhm @ 32.5A, 10V 2.5V @ 300µA 39 nC @ 10 V ±20V 2550 pF @ 10 V - 107W (Tc) 175°C (TJ) Surface Mount
TK1K7A60F,S4X

TK1K7A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,803 -

RFQ

TK1K7A60F,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4V @ 460µA 16 nC @ 10 V ±30V 560 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK1R4S04PB,LXHQ

TK1R4S04PB,LXHQ

MOSFET N-CH 40V 120A DPAK

Toshiba Semiconductor and Storage
2,853 -

RFQ

TK1R4S04PB,LXHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) 6V, 10V 1.9mOhm @ 60A, 6V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 180W (Tc) 175°C Surface Mount
TPH8R008NH,L1Q

TPH8R008NH,L1Q

MOSFET N-CH 80V 34A 8SOP

Toshiba Semiconductor and Storage
2,868 -

RFQ

TPH8R008NH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 34A (Tc) 10V 8mOhm @ 17A, 10V 4V @ 500µA 35 nC @ 10 V ±20V 3000 pF @ 40 V - 1.6W (Ta), 61W (Tc) 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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