Transistores - IGBT - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
MMIX4B20N300

MMIX4B20N300

IGBT F BRIDGE 3000V 34A 24SMPD

IXYS
2,059 -

RFQ

MMIX4B20N300

Ficha técnica

Tube BIMOSFET™ Active - Full Bridge 3000 V 34 A 150 W 3.2V @ 15V, 20A - - Standard No -55°C ~ 150°C (TJ) Surface Mount
MMIX4G20N250

MMIX4G20N250

IGBT H BRIDGE 2500V 23A 24SMPD

IXYS
3,461 -

RFQ

MMIX4G20N250

Ficha técnica

Tube - Active - Half Bridge 2500 V 23 A 100 W 3.1V @ 15V, 20A 10 µA 1.19 nF @ 15 V Standard No -55°C ~ 150°C (TJ) Surface Mount
MMIX4B22N300

MMIX4B22N300

IGBT TRANS 3000V 38A

IXYS
2,570 -

RFQ

Tube BIMOSFET™ Active - Full Bridge 3000 V 38 A 150 W 2.7V @ 15V, 22A 35 µA 2.2 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA20PG1200DHG-TRR

IXA20PG1200DHG-TRR

IGBT H BRIDGE 1200V 32A SMPD

IXYS
2,470 -

RFQ

IXA20PG1200DHG-TRR

Ficha técnica

Tape & Reel (TR) - Active PT Half Bridge 1200 V 32 A 130 W 2.1V @ 15V, 15A 125 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA40RG1200DHG-TRR

IXA40RG1200DHG-TRR

IGBT H BRIDGE 1200V 63A SMPD

IXYS
2,638 -

RFQ

IXA40RG1200DHG-TRR

Ficha técnica

Tape & Reel (TR) ISOPLUS™ Active PT Half Bridge 1200 V 63 A 230 W 2.15V @ 15V, 35A 150 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA20PG1200DHG-TUB

IXA20PG1200DHG-TUB

IGBT H BRIDGE 1200V 32A SMPD

IXYS
3,779 -

RFQ

IXA20PG1200DHG-TUB

Ficha técnica

Bulk - Active PT Half Bridge 1200 V 32 A 130 W 2.1V @ 15V, 15A 125 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA30PG1200DHG-TRR

IXA30PG1200DHG-TRR

IGBT H BRIDGE 1200V 43A SMPD

IXYS
2,981 -

RFQ

IXA30PG1200DHG-TRR

Ficha técnica

Tape & Reel (TR) - Active PT Half Bridge 1200 V 43 A 150 W 2.2V @ 15V, 25A 2.1 mA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA40RG1200DHG-TUB

IXA40RG1200DHG-TUB

IGBT H BRIDGE 1200V 63A SMPD

IXYS
3,569 -

RFQ

IXA40RG1200DHG-TUB

Ficha técnica

Bulk ISOPLUS™ Active PT Half Bridge 1200 V 63 A 230 W 2.15V @ 15V, 35A 150 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA40PG1200DHG-TUB

IXA40PG1200DHG-TUB

IGBT H BRIDGE 1200V 63A SMPD

IXYS
2,900 -

RFQ

IXA40PG1200DHG-TUB

Ficha técnica

Bulk - Active PT Half Bridge 1200 V 63 A 230 W 2.15V @ 15V, 35A 150 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA40PG1200DHG-TRR

IXA40PG1200DHG-TRR

IGBT H BRIDGE 1200V 63A SMPD

IXYS
3,794 -

RFQ

IXA40PG1200DHG-TRR

Ficha técnica

Tape & Reel (TR) - Active PT Half Bridge 1200 V 63 A 230 W 2.15V @ 15V, 35A 150 µA - Standard No -55°C ~ 150°C (TJ) Surface Mount
IXA30PG1200DHG-TUB

IXA30PG1200DHG-TUB

IGBT H BRIDGE 1200V 43A SMPD

IXYS
2,271 -

RFQ

IXA30PG1200DHG-TUB

Ficha técnica

Bulk - Active PT Half Bridge 1200 V 43 A 150 W 2.2V @ 15V, 25A 2.1 mA - Standard No -55°C ~ 150°C (TJ) Surface Mount
FII40-06D

FII40-06D

IGBT H BRIDGE 600V 40A I4PAK5

IXYS
3,970 -

RFQ

FII40-06D

Ficha técnica

Bulk - Obsolete NPT Half Bridge 600 V 40 A 125 W 2.2V @ 15V, 25A 600 µA 1.6 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
FII24N17AH1

FII24N17AH1

IGBT H BRIDGE 1700V 18A I4PAK5

IXYS
3,040 -

RFQ

FII24N17AH1

Ficha técnica

Box - Active NPT Half Bridge 1700 V 18 A 140 W 6V @ 15V, 16A 100 µA 2.4 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
FII24N17AH1S

FII24N17AH1S

IGBT H BRIDGE 1700V 18A I4PAK5

IXYS
3,290 -

RFQ

Box - Active NPT Half Bridge 1700 V 18 A 140 W 6V @ 15V, 16A 100 µA 2.4 nF @ 25 V Standard No - Through Hole
FII30-06D

FII30-06D

IGBT H BRIDGE 600V 30A I4PAK5

IXYS
3,327 -

RFQ

FII30-06D

Ficha técnica

Tube - Obsolete NPT Half Bridge 600 V 30 A 100 W 2.4V @ 15V, 20A 600 µA 1.1 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
FII30-12E

FII30-12E

IGBT H BRIDGE 1200V 33A I4PAK5

IXYS
2,769 -

RFQ

FII30-12E

Ficha técnica

Tube - Obsolete NPT Half Bridge 1200 V 33 A 150 W 2.9V @ 15V, 20A 200 µA 1.2 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
FII50-12E

FII50-12E

IGBT H BRIDGE 1200V 50A I4PAK5

IXYS
3,860 -

RFQ

FII50-12E

Ficha técnica

Tube - Obsolete NPT Half Bridge 1200 V 50 A 200 W 2.6V @ 15V, 30A 400 µA 2 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
FII24N170AH1

FII24N170AH1

IGBT H BRIDGE 1700V 18A I4PAK5

IXYS
2,996 -

RFQ

FII24N170AH1

Ficha técnica

Tube - Obsolete NPT Half Bridge 1700 V 18 A 140 W 6V @ 15V, 16A 100 µA 2.4 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Through Hole
MMIX4B20N300

MMIX4B20N300

IGBT F BRIDGE 3000V 34A 24SMPD

IXYS
3,877 -

RFQ

MMIX4B20N300

Ficha técnica

Tube BIMOSFET™ Active - Full Bridge 3000 V 34 A 150 W 3.2V @ 15V, 20A - - Standard No -55°C ~ 150°C (TJ) Surface Mount
MMIX4G20N250

MMIX4G20N250

IGBT H BRIDGE 2500V 23A 24SMPD

IXYS
3,397 -

RFQ

MMIX4G20N250

Ficha técnica

Tube - Active - Half Bridge 2500 V 23 A 100 W 3.1V @ 15V, 20A 10 µA 1.19 nF @ 15 V Standard No -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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