Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPH2900ENH,L1Q

TPH2900ENH,L1Q

MOSFET N-CH 200V 33A 8SOP

Toshiba Semiconductor and Storage
2,060 -

RFQ

TPH2900ENH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 33A (Ta) 10V 29mOhm @ 16.5A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 78W (Tc) 150°C (TJ) Surface Mount
TPH5200FNH,L1Q

TPH5200FNH,L1Q

MOSFET N-CH 250V 26A 8SOP

Toshiba Semiconductor and Storage
2,766 -

RFQ

TPH5200FNH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 250 V 26A (Tc) 10V 52mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 78W (Tc) 150°C (TJ) Surface Mount
TPWR8004PL,L1Q

TPWR8004PL,L1Q

MOSFET N-CH 40V 150A 8DSOP

Toshiba Semiconductor and Storage
3,058 -

RFQ

TPWR8004PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 0.8mOhm @ 50A, 10V 2.4V @ 1mA 103 nC @ 10 V ±20V 9600 pF @ 20 V - 1W (Ta), 170W (Tc) 175°C (TJ) Surface Mount
TPW1R306PL,L1Q

TPW1R306PL,L1Q

MOSFET N-CH 60V 260A 8DSOP

Toshiba Semiconductor and Storage
2,909 -

RFQ

TPW1R306PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 260A (Tc) 4.5V, 10V 1.29mOhm @ 50A, 10V 2.5V @ 1mA 91 nC @ 10 V ±20V 8100 pF @ 30 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TPWR6003PL,L1Q

TPWR6003PL,L1Q

MOSFET N-CH 30V 150A 8DSOP

Toshiba Semiconductor and Storage
2,021 -

RFQ

TPWR6003PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.6mOhm @ 50A, 10V 2.1V @ 1mA 110 nC @ 10 V ±20V 10000 pF @ 15 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TPCF8A01(TE85L)

TPCF8A01(TE85L)

MOSFET N-CH 20V 3A VS-8

Toshiba Semiconductor and Storage
3,611 -

RFQ

TPCF8A01(TE85L)

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2V, 4.5V 49mOhm @ 1.5A, 4.5V 1.2V @ 200µA 7.5 nC @ 5 V ±12V 590 pF @ 10 V Schottky Diode (Isolated) 330mW (Ta) 150°C (TJ) Surface Mount
TPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M

MOSFET P-CH 20V 2.7A VS-8

Toshiba Semiconductor and Storage
2,608 -

RFQ

TPCF8B01(TE85L,F,M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.8V, 4.5V 110mOhm @ 1.4A, 4.5V 1.2V @ 200µA 6 nC @ 5 V ±8V 470 pF @ 10 V Schottky Diode (Isolated) 330mW (Ta) 150°C (TJ) Surface Mount
SSM3K7002KFU,LF

SSM3K7002KFU,LF

MOSFET N-CH 60V 400MA USM

Toshiba Semiconductor and Storage
2,870 -

RFQ

SSM3K7002KFU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3K35AMFV,L3F

SSM3K35AMFV,L3F

MOSFET N-CH 20V 250MA VESM

Toshiba Semiconductor and Storage
3,745 -

RFQ

SSM3K35AMFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34 nC @ 4.5 V ±10V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K44MFV,L3F

SSM3K44MFV,L3F

MOSFET N-CH 30V 100MA VESM

Toshiba Semiconductor and Storage
2,270 -

RFQ

SSM3K44MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 8.5 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
SSM3K15AFU,LF

SSM3K15AFU,LF

MOSFET N-CH 30V 100MA USM

Toshiba Semiconductor and Storage
2,734 -

RFQ

SSM3K15AFU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3K37FS,LF

SSM3K37FS,LF

MOSFET N-CH 20V 200MA SSM

Toshiba Semiconductor and Storage
2,195 -

RFQ

SSM3K37FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - ±10V 12 pF @ 10 V - 100mW (Ta) 150°C (TA) Surface Mount
SSM3K16CT,L3F

SSM3K16CT,L3F

MOSFET N-CH 20V 100MA CST3

Toshiba Semiconductor and Storage
2,774 -

RFQ

SSM3K16CT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSIV Active N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 9.3 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K37MFV,L3F

SSM3K37MFV,L3F

MOSFET N-CH 20V 250MA VESM

Toshiba Semiconductor and Storage
3,828 -

RFQ

SSM3K37MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - ±10V 12 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J66MFV,L3XHF

SSM3J66MFV,L3XHF

AUTO AEC-Q SS MOS P-CH LOW VOLTA

Toshiba Semiconductor and Storage
2,968 -

RFQ

SSM3J66MFV,L3XHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 390mOhm @ 800mA, 4.5V 1V @ 1mA 1.6 nC @ 4.5 V +6V, -8V 100 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3K7002KF,LXHF

SSM3K7002KF,LXHF

SMOS NCH I: 0.4A, V: 60V, P: 270

Toshiba Semiconductor and Storage
2,521 -

RFQ

SSM3K7002KF,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 270mW (Ta) 150°C Surface Mount
SSM3K56MFV,L3F

SSM3K56MFV,L3F

MOSFET N-CH 20V 800MA VESM

Toshiba Semiconductor and Storage
2,831 -

RFQ

SSM3K56MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3K324R,LF

SSM3K324R,LF

MOSFET N-CH 30V 4A SOT-23F

Toshiba Semiconductor and Storage
3,406 -

RFQ

SSM3K324R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 55mOhm @ 4A, 4.5V - - ±12V 190 pF @ 30 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K339R,LF

SSM3K339R,LF

MOSFET N-CH 40V 2A SOT-23F

Toshiba Semiconductor and Storage
3,717 -

RFQ

SSM3K339R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 2A (Ta) 1.8V, 8V 185mOhm @ 1A, 8V 1.2V @ 1mA 1.1 nC @ 4.2 V ±12V 130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J378R,LF

SSM3J378R,LF

MOSFET P-CH 20V 6A SOT23F

Toshiba Semiconductor and Storage
5,480 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 1W (Ta) 150°C Surface Mount
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