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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TK65S04N1L,LXHQMOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage |
3,789 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65A (Ta) | 4.5V, 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 107W (Tc) | 175°C | Surface Mount |
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TPN13008NH,L1QMOSFET N-CH 80V 18A 8TSON Toshiba Semiconductor and Storage |
3,738 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Tc) | 10V | 13.3mOhm @ 9A, 10V | 4V @ 200µA | 18 nC @ 10 V | ±20V | 1600 pF @ 40 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
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TK4R4P06PL,RQMOSFET N-CHANNEL 60V 58A DPAK Toshiba Semiconductor and Storage |
2,652 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | 175°C | Surface Mount |
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TK560P60Y,RQMOSFET N-CHANNEL 600V 7A DPAK Toshiba Semiconductor and Storage |
3,984 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
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XPN9R614MC,L1XHQMOSFET P-CH 40V 40A 8TSON Toshiba Semiconductor and Storage |
2,926 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.1V @ 500µA | 64 nC @ 10 V | +10V, -20V | 3000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | Surface Mount |
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TK33S10N1Z,LXHQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
2,206 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C | Surface Mount |
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TPH14006NH,L1QMOSFET N CH 60V 14A 8-SOP ADV Toshiba Semiconductor and Storage |
3,129 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 6.5V, 10V | 14mOhm @ 7A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount |
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TJ60S04M3L,LXHQMOSFET P-CH 40V 60A DPAK Toshiba Semiconductor and Storage |
2,465 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Ta) | 6V, 10V | 6.3mOhm @ 30A, 10V | 3V @ 1mA | 125 nC @ 10 V | +10V, -20V | 6510 pF @ 10 V | - | 90W (Tc) | 175°C | Surface Mount |
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TK33S10N1L,LXHQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
2,498 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | 175°C | Surface Mount |
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TK15S04N1L,LQMOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage |
3,225 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | 175°C (TJ) | Surface Mount |
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TPN2R703NL,L1QMOSFET N-CH 30V 45A 8TSON Toshiba Semiconductor and Storage |
2,377 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 2.7mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
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TJ80S04M3L,LXHQMOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage |
3,421 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | 175°C | Surface Mount |
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TJ60S06M3L,LXHQMOSFET P-CH 60V 60A DPAK Toshiba Semiconductor and Storage |
2,409 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156 nC @ 10 V | +10V, -20V | 7760 pF @ 10 V | - | 100W (Tc) | 175°C | Surface Mount |
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TK33S10N1Z,LQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
2,955 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C (TJ) | Surface Mount |
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XPN12006NC,L1XHQMOSFET N-CH 60V 20A 8TSON Toshiba Semiconductor and Storage |
2,591 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 0.2mA | 23 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 65W (Tc) | -55°C ~ 175°C | Surface Mount |
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TK55S10N1,LXHQMOSFET N-CH 100V 55A DPAK Toshiba Semiconductor and Storage |
2,508 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | 175°C | Surface Mount |
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TK290P60Y,RQMOSFET N-CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
2,669 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
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TK90S06N1L,LXHQMOSFET N-CH 60V 90A DPAK Toshiba Semiconductor and Storage |
2,773 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 157W (Tc) | 175°C | Surface Mount |
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TK60S10N1L,LXHQMOSFET N-CH 100V 60A DPAK Toshiba Semiconductor and Storage |
2,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 180W (Tc) | 175°C | Surface Mount |
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TJ90S04M3L,LXHQMOSFET P-CH 40V 90A DPAK Toshiba Semiconductor and Storage |
3,685 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Ta) | 4.5V, 10V | 4.3mOhm @ 45A, 10V | 2V @ 1mA | 172 nC @ 10 V | +10V, -20V | 7700 pF @ 10 V | - | 180W (Tc) | 175°C | Surface Mount |
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