Transistores - JFET

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
MMBFJ175LT1G

MMBFJ175LT1G

JFET P-CH 30V 0.225W SOT23-3

onsemi
2,656 -

RFQ

MMBFJ175LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel 30 V - 7 mA @ 15 V - 3 V @ 10 nA 11pF @ 10V (VGS) 125 Ohms 225 mW -55°C ~ 150°C (TJ) Surface Mount
MMBFJ177LT1G

MMBFJ177LT1G

JFET P-CH 30V 0.225W SOT23-3

onsemi
2,194 -

RFQ

MMBFJ177LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel 30 V - 1.5 mA @ 15 V - 800 mV @ 10 nA 11pF @ 10V (VGS) 300 Ohms 225 mW -55°C ~ 150°C (TJ) Surface Mount
CMPF4393 TR PBFREE

CMPF4393 TR PBFREE

JFET N-CH 40V 50MA SOT23

Central Semiconductor Corp
3,001 -

RFQ

CMPF4393 TR PBFREE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 40 V 40 V 5 mA @ 20 V - 500 mV @ 1 nA 14pF @ 20V 100 Ohms 350 mW -65°C ~ 150°C (TJ) Surface Mount
JFE150DCKR

JFE150DCKR

ULTRA-LOW NOISE, LOW GATE CURREN

Texas Instruments
2,424 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 40 V 40 V 24 mA @ 10 V 50 mA - 24pF @ 5V - - -40°C ~ 125°C (TA) Surface Mount
JFE2140DR

JFE2140DR

DUAL, ULTRA-LOW NOISE, LOW GATE

Texas Instruments
3,116 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) 40 V 40 V - 50 mA - 13pF @ 5V - - -55°C ~ 150°C (TJ) Surface Mount
2N4392 PBFREE

2N4392 PBFREE

JFET N-CH 40V 1.8W TO-18

Central Semiconductor Corp
2,307 -

RFQ

2N4392 PBFREE

Ficha técnica

Bulk - Active N-Channel 40 V - 25 mA @ 20 V - 2 V @ 1 nA 14pF @ 20V 60 Ohms 1.8 W -65°C ~ 175°C (TJ) Through Hole
2N4393 PBFREE

2N4393 PBFREE

JFET N-CH 40V 1.8W TO-18

Central Semiconductor Corp
2,186 -

RFQ

2N4393 PBFREE

Ficha técnica

Bulk - Active N-Channel 40 V - 5 mA @ 20 V - 500 mV @ 1 nA 14pF @ 20V 100 Ohms 1.8 W -65°C ~ 175°C (TJ) Through Hole
UJ3N120035K3S

UJ3N120035K3S

1200V 35 MOHM SIC JFET, G3, N-ON

UnitedSiC
2,010 -

RFQ

UJ3N120035K3S

Ficha técnica

Tube - Active N-Channel 1200 V 1200 V - 63 A - 2145pF @ 100V 45 mOhms 429 W -55°C ~ 175°C (TJ) Through Hole
MMBF4391LT1G

MMBF4391LT1G

JFET N-CH 30V 0.225W SOT23-3

onsemi
256 -

RFQ

MMBF4391LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 30 V 30 V 50 mA @ 15 V - 4 V @ 10 nA 14pF @ 15V 30 Ohms 225 mW -55°C ~ 150°C (TJ) Surface Mount
BSR57

BSR57

JFET N-CH 40V 0.25W SOT-23

onsemi
3,494 -

RFQ

BSR57

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 40 V - 20 mA @ 15 V - 2 V @ 0.5 nA - 40 Ohms 250 mW 150°C (TJ) Surface Mount
J112-D26Z

J112-D26Z

JFET N-CH 35V 625MW TO92-3

onsemi
3,438 -

RFQ

J112-D26Z

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 35 V - 5 mA @ 15 V - 1 V @ 1 µA - 50 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
SMMBFJ177LT1G

SMMBFJ177LT1G

TRANS JFET P-CH SOT23

onsemi
2,709 -

RFQ

SMMBFJ177LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel 30 V - 1.5 mA @ 15 V - 800 mV @ 10 nA 11pF @ 10V (VGS) 300 Ohms 225 mW -55°C ~ 150°C (TJ) Surface Mount
2SK208-Y(TE85L,F)

2SK208-Y(TE85L,F)

JFET N-CH 50V S-MINI

Toshiba Semiconductor and Storage
3,232 -

RFQ

2SK208-Y(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 50 V - 1.2 mA @ 10 V 6.5 mA 400 mV @ 100 nA 8.2pF @ 10V - 100 mW 125°C (TJ) Surface Mount
J111-D26Z

J111-D26Z

JFET N-CH 35V 625MW TO92

onsemi
2,032 -

RFQ

J111-D26Z

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 35 V - 20 mA @ 15 V - 3 V @ 1 µA - 30 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
2SK879-GR(TE85L,F)

2SK879-GR(TE85L,F)

JFET N-CH 0.1W USM

Toshiba Semiconductor and Storage
2,464 -

RFQ

2SK879-GR(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - - 2.6 mA @ 10 V - 400 mV @ 100 nA 8.2pF @ 10V - 100 mW 125°C (TJ) Surface Mount
2SK879-Y(TE85L,F)

2SK879-Y(TE85L,F)

JFET N-CH 0.1W USM

Toshiba Semiconductor and Storage
2,224 -

RFQ

2SK879-Y(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - - 1.2 mA @ 10 V - 400 mV @ 100 nA 8.2pF @ 10V - 100 mW 125°C (TJ) Surface Mount
J113-D74Z

J113-D74Z

JFET N-CH 35V 625MW TO92

onsemi
3,730 -

RFQ

J113-D74Z

Ficha técnica

Cut Tape (CT),Tape & Box (TB) - Active N-Channel 35 V - 2 mA @ 15 V - 500 mV @ 1 µA - 100 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
J112-D74Z

J112-D74Z

JFET N-CH 35V 625MW TO92

onsemi
3,975 -

RFQ

J112-D74Z

Ficha técnica

Cut Tape (CT),Tape & Box (TB) - Active N-Channel 35 V - 5 mA @ 15 V - 1 V @ 1 µA - 50 Ohms 625 mW -55°C ~ 150°C (TJ) Through Hole
MMBFU310LT1G

MMBFU310LT1G

JFET N-CH 25V 0.225W SOT23-3

onsemi
2,684 -

RFQ

MMBFU310LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 25 V 25 V 24 mA @ 10 V - 2.5 V @ 1 nA 5pF @ 10V (VGS) - 225 mW -55°C ~ 150°C (TJ) Surface Mount
J175-D26Z

J175-D26Z

JFET P-CH 30V 0.35W TO92-3

onsemi
3,496 -

RFQ

J175-D26Z

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel 30 V - 7 mA @ 15 V - 3 V @ 10 nA - 125 Ohms 350 mW -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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