Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3J355R,LF

SSM3J355R,LF

MOSFET P-CH 20V 6A SOT23F

Toshiba Semiconductor and Storage
5,050 -

RFQ

SSM3J355R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 30.1mOhm @ 4A, 4.5V 1V @ 1mA 16.6 nC @ 4.5 V ±10V 1030 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K336R,LF

SSM3K336R,LF

MOSFET N-CH 30V 3A SOT23F

Toshiba Semiconductor and Storage
5,900 -

RFQ

SSM3K336R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 95mOhm @ 2A, 10V 2.5V @ 100µA 1.7 nC @ 4.5 V ±20V 126 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J358R,LF

SSM3J358R,LF

MOSFET P-CH 20V 6A SOT23F

Toshiba Semiconductor and Storage
2,451 -

RFQ

SSM3J358R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 8V 22.1mOhm @ 6A, 8V 1V @ 1mA 38.5 nC @ 8 V ±10V 1331 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6J412TU,LF

SSM6J412TU,LF

MOSFET P-CH 20V 4A UF6

Toshiba Semiconductor and Storage
2,254 -

RFQ

SSM6J412TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 42.7mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V ±8V 840 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3J168F,LF

SSM3J168F,LF

MOSFET P-CH 60V 400MA S-MINI

Toshiba Semiconductor and Storage
2,814 -

RFQ

SSM3J168F,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4V, 10V 1.9Ohm @ 100mA, 4.5V 2V @ 1mA 3 nC @ 10 V +20V, -16V 82 pF @ 10 V - 1.2W (Ta) 150°C Surface Mount
SSM3J135TU,LF

SSM3J135TU,LF

MOSFET P-CH 20V 3A UFM

Toshiba Semiconductor and Storage
2,326 -

RFQ

SSM3J135TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4.5V 103mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 270 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3K127TU,LF

SSM3K127TU,LF

MOSFET N-CH 30V 2A UFM

Toshiba Semiconductor and Storage
3,187 -

RFQ

SSM3K127TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 1.8V, 4V 123mOhm @ 1A, 4V 1V @ 1mA 1.5 nC @ 4 V ±12V 123 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3K122TU,LF

SSM3K122TU,LF

MOSFET N-CH 20V 2A UFM

Toshiba Semiconductor and Storage
6,047 -

RFQ

SSM3K122TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4V 123mOhm @ 1A, 4V 1V @ 1mA 3.4 nC @ 4 V ±10V 195 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3K357R,LF

SSM3K357R,LF

MOSFET N-CH 60V 650MA SOT23F

Toshiba Semiconductor and Storage
2,950 -

RFQ

SSM3K357R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSV Active N-Channel MOSFET (Metal Oxide) 60 V 650mA (Ta) 3V, 5V 1.8Ohm @ 150mA, 5V 2V @ 1mA 1.5 nC @ 5 V ±12V 60 pF @ 12 V - 1W (Ta) 150°C Surface Mount
SSM3J374R,LXHF

SSM3J374R,LXHF

SMOS P-CH VDSS:-30V VGSS:-20/+10

Toshiba Semiconductor and Storage
2,874 -

RFQ

SSM3J374R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 71mOhm @ 3A, 10V 2V @ 100µA 5.9 nC @ 10 V +10V, -20V 280 pF @ 15 V - 1W (Ta) 150°C Surface Mount
SSM3J372R,LXHF

SSM3J372R,LXHF

AECQ MOSFET PCH -30V -6A SOT23F

Toshiba Semiconductor and Storage
3,301 -

RFQ

SSM3J372R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 10V 42mOhm @ 5A, 10V 1.2V @ 1mA 8.2 nC @ 4.5 V +6V, -12V 560 pF @ 15 V - 1W (Ta) 150°C Surface Mount
2SK209-Y(TE85L,F)

2SK209-Y(TE85L,F)

MOSFET N-CH 10V 14MA SC59

Toshiba Semiconductor and Storage
2,444 -

RFQ

2SK209-Y(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 10 V 14mA - - - - - 13 pF @ 10 V - 150mW 125°C (TJ) Surface Mount
SSM6J505NU,LF

SSM6J505NU,LF

MOSFET P-CH 12V 12A 6UDFNB

Toshiba Semiconductor and Storage
6,054 -

RFQ

SSM6J505NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Ta) 1.2V, 4.5V 12mOhm @ 4A, 4.5V 1V @ 1mA 37.6 nC @ 4.5 V ±6V 2700 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM3K341TU,LXHF

SSM3K341TU,LXHF

AECQ MOSFET NCH 60V 6A SOT323F

Toshiba Semiconductor and Storage
3,688 -

RFQ

SSM3K341TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1W (Ta) 175°C Surface Mount
SSM3J351R,LXHF

SSM3J351R,LXHF

AECQ MOSFET PCH -60V -3.5A SOT23

Toshiba Semiconductor and Storage
2,335 -

RFQ

SSM3J351R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta) 4V, 10V 134mOhm @ 1A, 10V 2V @ 1mA 15.1 nC @ 10 V +10V, -20V 660 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3K361R,LXHF

SSM3K361R,LXHF

AECQ MOSFET NCH 100V 3.5A SOT23F

Toshiba Semiconductor and Storage
2,876 -

RFQ

SSM3K361R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.2W (Ta) 175°C Surface Mount
TK7R7P10PL,RQ

TK7R7P10PL,RQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,676 -

RFQ

TK7R7P10PL,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 7.7mOhm @ 27.5A, 10V 2.5V @ 500µA 44 nC @ 10 V ±20V 2800 pF @ 50 V - 93W (Tc) 175°C Surface Mount
TK11S10N1L,LXHQ

TK11S10N1L,LXHQ

MOSFET N-CH 100V 11A DPAK

Toshiba Semiconductor and Storage
3,591 -

RFQ

TK11S10N1L,LXHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) 4.5V, 10V 28mOhm @ 5.5A, 10V 2.5V @ 100µA 15 nC @ 10 V ±20V 850 pF @ 10 V - 65W (Tc) 175°C Surface Mount
SSM6K819R,LXHF

SSM6K819R,LXHF

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Toshiba Semiconductor and Storage
2,516 -

RFQ

SSM6K819R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 25.8mOhm @ 4A, 10V 2.5V @ 100µA 8.5 nC @ 4.5 V ±20V 1110 pF @ 15 V - 1.5W (Ta) 175°C Surface Mount
TK6R9P08QM,RQ

TK6R9P08QM,RQ

UMOS10 DPAK 80V 6.9MOHM

Toshiba Semiconductor and Storage
2,701 -

RFQ

TK6R9P08QM,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 6V, 10V 6.9mOhm @ 31A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 89W (Tc) 175°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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