Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3J114TU(TE85L)

SSM3J114TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage
293 -

RFQ

SSM3J114TU(TE85L)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V 1V @ 1mA 7.7 nC @ 4 V ±8V 331 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K341TU,LF

SSM3K341TU,LF

MOSFET N-CH 60V 6A UFM

Toshiba Semiconductor and Storage
3,388 -

RFQ

SSM3K341TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.8W (Ta) 175°C Surface Mount
SSM6J402TU,LF

SSM6J402TU,LF

MOSFET P-CH 30V 2A UF6

Toshiba Semiconductor and Storage
230 -

RFQ

SSM6J402TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 117mOhm @ 1A, 10V 2.6V @ 1mA 5.3 nC @ 10 V ±20V 280 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3J140TU,LXHF

SSM3J140TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage
408 -

RFQ

SSM3J140TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V +6V, -8V 1800 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
TPH8R903NL,LQ

TPH8R903NL,LQ

MOSFET N CH 30V 20A 8SOP

Toshiba Semiconductor and Storage
556 -

RFQ

TPH8R903NL,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 8.9mOhm @ 10A, 10V 2.3V @ 1mA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1.6W (Ta), 24W (Tc) 150°C (TJ) Surface Mount
TPN4R712MD,L1Q

TPN4R712MD,L1Q

MOSFET P-CH 20V 36A 8TSON

Toshiba Semiconductor and Storage
202 -

RFQ

TPN4R712MD,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 2.5V, 4.5V 4.7mOhm @ 18A, 4.5V 1.2V @ 1mA 65 nC @ 5 V ±12V 4300 pF @ 10 V - 42W (Tc) 150°C (TJ) Surface Mount
TK7S10N1Z,LQ

TK7S10N1Z,LQ

MOSFET N-CH 100V 7A DPAK

Toshiba Semiconductor and Storage
634 -

RFQ

TK7S10N1Z,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta) 10V 48mOhm @ 3.5A, 10V 4V @ 100µA 7.1 nC @ 10 V ±20V 470 pF @ 10 V - 50W (Tc) 175°C (TJ) Surface Mount
TK560P65Y,RQ

TK560P65Y,RQ

MOSFET N-CHANNEL 650V 7A DPAK

Toshiba Semiconductor and Storage
510 -

RFQ

TK560P65Y,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) Surface Mount
TK7P65W,RQ

TK7P65W,RQ

MOSFET N-CH 650V 6.8A DPAK

Toshiba Semiconductor and Storage
467 -

RFQ

TK7P65W,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Ta) 10V 800mOhm @ 3.4A, 10V 3.5V @ 250µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) Surface Mount
TPC8109(TE12L)

TPC8109(TE12L)

MOSFET P-CH 30V 10A 8-SOP

Toshiba Semiconductor and Storage
3,579 -

RFQ

TPC8109(TE12L)

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) - 20mOhm @ 5A, 10V 2V @ 1mA 45 nC @ 10 V - 2260 pF @ 10 V - - - Surface Mount
TK14G65W,RQ

TK14G65W,RQ

MOSFET N-CH 650V 13.7A D2PAK

Toshiba Semiconductor and Storage
827 -

RFQ

TK14G65W,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Surface Mount
SSM3J356R,LF

SSM3J356R,LF

MOSFET P-CH 60V 2A SOT-23F

Toshiba Semiconductor and Storage
3,101 -

RFQ

SSM3J356R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4V, 10V 300mOhm @ 1A, 10V 2V @ 1mA 8.3 nC @ 10 V +10V, -20V 330 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J372R,LF

SSM3J372R,LF

MOSFET P-CH 30V 6A SOT23F

Toshiba Semiconductor and Storage
138,315 -

RFQ

SSM3J372R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 10V 42mOhm @ 5A, 10V 1.2V @ 1mA 8.2 nC @ 4.5 V +12V, -6V 560 pF @ 15 V - 1W (Ta) 150°C Surface Mount
SSM3J351R,LF

SSM3J351R,LF

MOSFET P-CH 60V 3.5A SOT-23F

Toshiba Semiconductor and Storage
2,700 -

RFQ

SSM3J351R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta) 4V, 10V 134mOhm @ 1A, 10V 2V @ 1mA 15.1 nC @ 10 V +10V, -20V 660 pF @ 10 V - 2W (Ta) 150°C Surface Mount
SSM6J511NU,LF

SSM6J511NU,LF

MOSFET P-CH 12V 14A 6UDFNB

Toshiba Semiconductor and Storage
3,639 -

RFQ

SSM6J511NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 12 V 14A (Ta) - 9.1mOhm @ 4A, 8V 1V @ 1mA 47 nC @ 4.5 V - 3350 pF @ 6 V - - -55°C ~ 150°C (TJ) Surface Mount
SSM6K361NU,LF

SSM6K361NU,LF

MOSFET N-CH 100V 3.5A 6UDFNB

Toshiba Semiconductor and Storage
29,344 -

RFQ

SSM6K361NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.25W (Ta) 150°C Surface Mount
SSM6J507NU,LF

SSM6J507NU,LF

MOSFET P-CH 30V 10A 6UDFNB

Toshiba Semiconductor and Storage
2,432 -

RFQ

SSM6J507NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 20mOhm @ 4A, 10V 2.2V @ 250µA 20.4 nC @ 4.5 V +20V, -25V 1150 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM6K513NU,LF

SSM6K513NU,LF

MOSFET N-CH 30V 15A 6UDFNB

Toshiba Semiconductor and Storage
2,758 -

RFQ

SSM6K513NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 8.9mOhm @ 4A, 10V 2.1V @ 100µA 7.5 nC @ 4.5 V ±20V 1130 pF @ 15 V - 1.25W (Ta) 150°C (TA) Surface Mount
TPCA8016-H(TE12LQM

TPCA8016-H(TE12LQM

MOSFET N-CH 60V 25A 8-SOPA

Toshiba Semiconductor and Storage
3,780 -

RFQ

TPCA8016-H(TE12LQM

Ficha técnica

Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta) - 21mOhm @ 13A, 10V 2.3V @ 1mA 22 nC @ 10 V - 1375 pF @ 10 V - - - Surface Mount
TPCA8007-H(TE12L,Q

TPCA8007-H(TE12L,Q

MOSFET N-CH 100V 20A 8-SOPA

Toshiba Semiconductor and Storage
3,584 -

RFQ

TPCA8007-H(TE12L,Q

Ficha técnica

Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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