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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2106GANFET TRANS SYM 100V BUMPED DIE EPC |
3,249 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2110GANFET 2NCH 120V 3.4A DIE EPC |
2,627 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - |
|
EPC2104GAN TRANS SYMMETRICAL HALF BRIDG EPC |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
BSM300D12P2E001MOSFET 2N-CH 1200V 300A Rohm Semiconductor |
2,831 | - |
RFQ |
Ficha técnica |
Tray | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 300A (Tc) | - | 4V @ 68mA | - | 35000pF @ 10V | 1875W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
2N7002DW-TPMOSFET 2N-CH 60V 0.115A SOT-363 Micro Commercial Co |
3,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 60V | 115mA | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | 50pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
SSM6N37FU,LFMOSFET 2 N-CHANNEL 20V 250MA US6 Toshiba Semiconductor and Storage |
3,162 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 250mA (Ta) | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 300mW | 150°C | Surface Mount |
|
UM6K33NTNMOSFET 2N-CH 50V 0.2A UMT6 Rohm Semiconductor |
2,613 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 50V | 200mA | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | 25pF @ 10V | 120mW | 150°C (TJ) | Surface Mount |
|
DMC2700UDM-7MOSFET N/P-CH 20V SOT26 Diodes Incorporated |
3,578 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate | 20V | 1.34A, 1.14A | 400mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | 1.12W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
UM6K34NTCNMOSFET 2N-CH 50V 0.2A UMT6 Rohm Semiconductor |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate, 0.9V Drive | 50V | 200mA | 2.2Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | 26pF @ 10V | 120mW | 150°C (TJ) | Surface Mount |
|
SSM6L36FE,LMMOSFET N/P-CH 20V 0.5A/0.33A ES6 Toshiba Semiconductor and Storage |
3,523 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 150mW | 150°C (TJ) | Surface Mount |
|
IRF7314TRPBFMOSFET 2P-CH 20V 5.3A 8-SOIC Infineon Technologies |
3,459 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5.3A | 58mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9362TRPBFMOSFET 2P-CH 30V 8A 8SOIC Infineon Technologies |
2,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7316TRPBFMOSFET 2P-CH 30V 4.9A 8SO Infineon Technologies |
3,253 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
AO4611MOSFET N/P-CH 60V 8SOIC Alpha & Omega Semiconductor Inc. |
2,088 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate | 60V | - | 25mOhm @ 6.3A, 10V | 3V @ 250µA | 58nC @ 10V | 2300pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
NX3008NBKS,115MOSFET 2N-CH 30V 0.35A 6TSSOP Nexperia USA Inc. |
2,682 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 350mA | 1.4Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | 445mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
NX3008PBKS,115MOSFET 2P-CH 30V 0.2A 6TSSOP Nexperia USA Inc. |
3,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 200mA | 4.1Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.75nC @ 4.5V | 46pF @ 15V | 445mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N7002DWH6327XTSA1MOSFET 2N-CH 60V 0.3A SOT363 Infineon Technologies |
3,671 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | 20pF @ 25V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP3085LSD-13MOSFET 2P-CH 30V 3.9A 8SO Diodes Incorporated |
2,925 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.9A | 70mOhm @ 5.3A, 10V | 3V @ 250µA | 11nC @ 10V | 563pF @ 25V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSD840NH6327XTSA1MOSFET 2N-CH 20V 0.88A SOT363 Infineon Technologies |
3,610 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
DMN2004VK-7MOSFET 2N-CH 20V 0.54A SOT-563 Diodes Incorporated |
3,278 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 540mA | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | - | 150pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
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