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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPN11006PL,LQMOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage |
2,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 4.5V, 10V | 11.4mOhm @ 13A, 10V | 2.5V @ 200µA | 17 nC @ 10 V | ±20V | 1625 pF @ 30 V | - | 610mW (Ta), 61W (Tc) | 175°C | Surface Mount |
|
TPN8R903NL,LQMOSFET N-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
2,961 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8 nC @ 4.5 V | ±20V | 820 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount |
|
XPN7R104NC,L1XHQMOSFET N-CH 40V 20A 8TSON Toshiba Semiconductor and Storage |
3,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | - | 840mW (Ta), 65W (Tc) | 175°C | Surface Mount |
|
2SK2963(TE12L,F)MOSFET N-CH 100V 1A PW-MINI Toshiba Semiconductor and Storage |
3,779 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 4V, 10V | 700mOhm @ 500mA, 10V | 2V @ 1mA | 6.3 nC @ 10 V | ±20V | 140 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
TK5R1P08QM,RQUMOS10 DPAK 80V 5.1MOHM Toshiba Semiconductor and Storage |
2,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 5.1mOhm @ 42A, 10V | 3.5V @ 700µA | 56 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 104W (Tc) | 175°C | Surface Mount |
|
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XPN3R804NC,L1XHQMOSFET N-CH 40V 40A 8TSON Toshiba Semiconductor and Storage |
3,741 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2230 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | Surface Mount |
|
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TJ50S06M3L,LXHQMOSFET P-CH 60V 50A DPAK Toshiba Semiconductor and Storage |
2,985 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | 175°C | Surface Mount |
|
TPH3R704PC,LQMOSFET N-CH 40V 82A 8SOP Toshiba Semiconductor and Storage |
2,095 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 3.7mOhm @ 41A, 10V | 2.4V @ 300µA | 47 nC @ 10 V | ±20V | 3615 pF @ 20 V | - | 830mW (Ta), 90W (Tc) | 175°C | Surface Mount |
|
TPN7R506NH,L1QMOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage |
3,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 6.5V, 10V | 7.5mOhm @ 13A, 10V | 4V @ 200µA | 22 nC @ 10 V | ±20V | 1800 pF @ 30 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK100S04N1L,LXHQMOSFET N-CH 40V 100A DPAK Toshiba Semiconductor and Storage |
3,080 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2.5V @ 500µA | 76 nC @ 10 V | ±20V | 5490 pF @ 10 V | - | 180W (Tc) | 175°C | Surface Mount |
|
|
TPH2R104PL,LQMOSFET N-CH 40V 100A 8SOP Toshiba Semiconductor and Storage |
2,206 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.4V @ 500µA | 78 nC @ 10 V | ±20V | 6230 pF @ 20 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount |
|
|
TPN2R203NC,L1QMOSFET N-CH 30V 45A 8TSON Toshiba Semiconductor and Storage |
3,671 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 10V | 2.2mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34 nC @ 10 V | ±20V | 2230 pF @ 15 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TPH3R203NL,L1QMOSFET N-CH 30V 47A 8SOP Toshiba Semiconductor and Storage |
2,845 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 4.5V, 10V | 3.2mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | Surface Mount |
|
XPH3R206NC,L1XHQMOSFET N-CH 60V 70A 8SOP Toshiba Semiconductor and Storage |
2,206 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 3.2mOhm @ 35A, 10V | 2.5V @ 500µA | 65 nC @ 10 V | ±20V | 4180 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | Surface Mount |
|
TK290P65Y,RQMOSFET N-CH 650V 11.5A DPAK Toshiba Semiconductor and Storage |
2,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
|
|
XPH6R30ANB,L1XHQMOSFET N-CH 100V 45A 8SOP Toshiba Semiconductor and Storage |
2,722 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | Surface Mount | |
|
|
TPH1400ANH,L1QMOSFET N CH 100V 24A 8-SOP Toshiba Semiconductor and Storage |
2,268 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 13.6mOhm @ 12A, 10V | 4V @ 300µA | 22 nC @ 10 V | ±20V | 1900 pF @ 50 V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount |
|
TPH9R00CQH,LQUMOS10 SOP-ADV(N) 150V 9MOHM Toshiba Semiconductor and Storage |
2,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 64A (Tc) | 8V, 10V | 9mOhm @ 32A, 10V | 4.3V @ 1mA | 44 nC @ 10 V | ±20V | 5400 pF @ 75 V | - | 960mW (Ta), 210W (Tc) | 175°C | Surface Mount |
|
TPH1R204PL1,LQUMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage |
2,285 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 7200 pF @ 20 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | |
|
TPW1R104PB,L1XHQMOSFET N-CH 40V 120A 8DSOP Toshiba Semiconductor and Storage |
2,381 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | Surface Mount |
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