Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF18N65M2

STF18N65M2

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics
765 -

RFQ

STF18N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 330mOhm @ 6A, 10V 4V @ 250µA 20 nC @ 10 V ±25V 770 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK65A10N1,S4X

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage
3,274 -

RFQ

TK65A10N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
SIHP17N80AE-GE3

SIHP17N80AE-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
980 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF9N60NT

FCPF9N60NT

MOSFET N-CH 600V 9A TO220F

onsemi
812 -

RFQ

FCPF9N60NT

Ficha técnica

Tube SuperMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 1240 pF @ 100 V - 29.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP18N50C-E3

SIHP18N50C-E3

MOSFET N-CH 500V 18A TO220AB

Vishay Siliconix
998 -

RFQ

SIHP18N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 223W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP24N60M6

STP24N60M6

MOSFET N-CH 600V TO220

STMicroelectronics
732 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tj) - - - - - - - - - Through Hole
STP18N65M2

STP18N65M2

MOSFET N-CH 650V 12A TO220

STMicroelectronics
2,088 -

RFQ

STP18N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 330mOhm @ 6A, 10V 4V @ 250µA 20 nC @ 10 V ±25V 770 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
IRFIBE20GPBF

IRFIBE20GPBF

MOSFET N-CH 800V 1.4A TO220-3

Vishay Siliconix
2,713 -

RFQ

IRFIBE20GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.4A (Tc) 10V 6.5Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP240N60E-GE3

SIHP240N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
461 -

RFQ

SIHP240N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 795 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF12N65M5

STF12N65M5

MOSFET N-CH 650V 8.5A TO220FP

STMicroelectronics
153 -

RFQ

STF12N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 430mOhm @ 4.3A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 900 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
IPP80R360P7XKSA1

IPP80R360P7XKSA1

MOSFET N-CH 800V 13A TO220-3

Infineon Technologies
2,241 -

RFQ

IPP80R360P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 84W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP12N50P

IXTP12N50P

MOSFET N-CH 500V 12A TO220AB

IXYS
195 -

RFQ

IXTP12N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK28A65W,S5X

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage
2,582 -

RFQ

TK28A65W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
AOK125A60

AOK125A60

MOSFET N-CH 600V 28A TO247

Alpha & Omega Semiconductor Inc.
2,623 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB35N60EF-GE3

SIHB35N60EF-GE3

MOSFET N-CH 600V 32A D2PAK

Vishay Siliconix
2,494 -

RFQ

SIHB35N60EF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N950CI C0G

TSM80N950CI C0G

MOSFET N-CH 800V 6A ITO220AB

Taiwan Semiconductor Corporation
478 -

RFQ

TSM80N950CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZA60R120P7XKSA1

IPZA60R120P7XKSA1

MOSFET N-CH 600V 26A TO247-4

Infineon Technologies
2,555 -

RFQ

IPZA60R120P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP42N60M2-EP

STP42N60M2-EP

MOSFET N-CH 600V 34A TO220

STMicroelectronics
3,164 -

RFQ

STP42N60M2-EP

Ficha técnica

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
IXTK82N25P

IXTK82N25P

MOSFET N-CH 250V 82A TO264

IXYS
2,228 -

RFQ

IXTK82N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34N80B2C3G

APT34N80B2C3G

MOSFET N-CH 800V 34A T-MAX

Microchip Technology
2,210 -

RFQ

APT34N80B2C3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 145mOhm @ 22A, 10V 3.9V @ 2mA 355 nC @ 10 V ±20V 4510 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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