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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TPCA8009-H(TE12L,QMOSFET N-CH 150V 7A 8SOP Toshiba Semiconductor and Storage |
2,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount |
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TPCA8010-H(TE12L,QMOSFET N-CH 200V 5.5A 8SOP Toshiba Semiconductor and Storage |
2,149 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | π-MOSV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Ta) | 10V | 450mOhm @ 2.7A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount |
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TPCA8008-H(TE12L,QMOSFET N-CH 250V 4A 8SOP Toshiba Semiconductor and Storage |
3,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount |
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XPN6R706NC,L1XHQMOSFET N-CH 60V 40A 8TSON Toshiba Semiconductor and Storage |
2,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | Surface Mount |
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2SJ377(TE16R1,NQ)MOSFET P-CH 60V 5A PW-MOLD Toshiba Semiconductor and Storage |
2,227 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 22 nC @ 10 V | ±20V | 630 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | Surface Mount |
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XPW4R10ANB,L1XHQMOSFET N-CH 100V 70A AEC-Q101 Toshiba Semiconductor and Storage |
3,841 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | Standard | 170W (Tc) | -55°C ~ 175°C | Surface Mount |
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TPN3R704PL,L1QMOSFET N-CH 40V 80A 8TSON Toshiba Semiconductor and Storage |
3,198 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 630mW (Ta), 86W (Tc) | 175°C | Surface Mount |
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TPH7R006PL,L1QMOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage |
5,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 81W (Tc) | 175°C (TJ) | Surface Mount |
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TPH3R704PL,L1QMOSFET N-CH 40V 92A 8SOP Toshiba Semiconductor and Storage |
2,007 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 92A (Tc) | 4.5V, 10V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 27 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 960mW (Ta), 81W (Tc) | 175°C | Surface Mount |
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TPN2R304PL,L1QMOSFET N-CH 40V 80A 8TSON Toshiba Semiconductor and Storage |
3,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41 nC @ 10 V | ±20V | 3600 pF @ 20 V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount |
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TPN1R603PL,L1QMOSFET N-CH 30V 80A 8TSON Toshiba Semiconductor and Storage |
3,152 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.1V @ 300µA | 41 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 104W (Tc) | 175°C | Surface Mount |
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TK160F10N1L,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
2,175 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount | |
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TPH1R712MD,L1QMOSFET P-CH 20V 60A 8SOP Toshiba Semiconductor and Storage |
3,570 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 2.5V, 4.5V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182 nC @ 5 V | ±12V | 10900 pF @ 10 V | - | 78W (Tc) | 150°C (TJ) | Surface Mount |
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TPH7R506NH,L1QMOSFET N-CH 60V 22A 8SOP Toshiba Semiconductor and Storage |
2,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31 nC @ 10 V | ±20V | 2320 pF @ 30 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount |
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TPH2R506PL,L1QMOSFET N-CH 60V 100A 8SOP Toshiba Semiconductor and Storage |
3,487 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60 nC @ 10 V | ±20V | 5435 pF @ 30 V | - | 132W (Tc) | 175°C (TJ) | Surface Mount |
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TPN1110ENH,L1QMOSFET N-CH 200V 7.2A 8TSON Toshiba Semiconductor and Storage |
2,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount |
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TPH3300CNH,L1QMOSFET N-CH 150V 18A 8SOP Toshiba Semiconductor and Storage |
3,590 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Ta) | 10V | 33mOhm @ 9A, 10V | 4V @ 300µA | 10.6 nC @ 10 V | ±20V | 1100 pF @ 75 V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount |
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TPH1R306PL,L1QMOSFET N-CH 60V 100A 8SOP Toshiba Semiconductor and Storage |
2,371 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 1.34mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
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TK31V60X,LQMOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage |
3,652 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 98mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount |
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TK9J90E,S1EMOSFET N-CH 900V 9A TO3P Toshiba Semiconductor and Storage |
6,548 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
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