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0Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-STPS20L15GR-M3DIODE SCHOTTKY 15V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,854 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 520 mV @ 40 A | |
|
V10PM10-M3/IDIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 750 mV @ 10 A |
|
SF2004PT C0GDIODE GEN PURP 200V 20A TO247AD Taiwan Semiconductor Corporation |
3,192 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 20A | -55°C ~ 150°C | 1.1 V @ 20 A | |
|
HSM825GE3/TR13DIODE SCHOTTKY 25V 8A DO215AB Microchip Technology |
3,708 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 25 V | 25 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
|
HSM5100GE3/TR13DIODE SCHOTTKY 100V 5A DO215AB Microchip Technology |
2,965 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
|
V8P45-M3/87ADIODE SCHOTTKY 45V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,701 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 45 V | 45 V | 4.3A | -40°C ~ 150°C | 580 mV @ 8 A |
|
|
VS-10ETS12S-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,607 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
V8PM10HM3/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,935 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 60 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 750 mV @ 8 A |
|
PDS4200H-13DIODE SCHOTTKY 200V 4A POWERDI5 Diodes Incorporated |
3,852 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 840 mV @ 4 A | |
|
|
HSM830GE3/TR13DIODE SCHOTTKY 30V 8A DO215AB Microchip Technology |
2,456 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
|
HSM580GE3/TR13DIODE SCHOTTKY 80V 5A DO215AB Microchip Technology |
2,722 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 80 V | 80 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
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|
SGL41-20HE3/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,244 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
MBR1550ULPS-TPDIODE SCHOTTKY 50V 15A TO277B Micro Commercial Co |
3,053 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 300 µA @ 50 V | 50 V | 15A | -55°C ~ 150°C | 470 mV @ 15 A | |
|
|
V8PM10HM3/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 60 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 750 mV @ 8 A |
|
|
SF2005PT C0GDIODE GEN PURP 300V 20A TO247AD Taiwan Semiconductor Corporation |
3,505 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 20A | -55°C ~ 150°C | 1.5 V @ 20 A | |
|
|
HSM835GE3/TR13DIODE SCHOTTKY 35V 8A DO215AB Microchip Technology |
3,927 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 35 V | 35 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
|
HSM590GE3/TR13DIODE SCHOTTKY 90V 5A DO215AB Microchip Technology |
3,119 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 90 V | 90 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
|
SGL41-30HE3/96DIODE SCHOTTKY 30V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,814 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
GP30J-E3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,713 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
VS-30WQ04FNTRL-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,121 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
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