Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK56A12N1,S4X

TK56A12N1,S4X

MOSFET N-CH 120V 56A TO220SIS

Toshiba Semiconductor and Storage
2,258 -

RFQ

TK56A12N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Tc) 10V 7.5mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
TPCC8002-H(TE12L,Q

TPCC8002-H(TE12L,Q

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
2,660 -

RFQ

TPCC8002-H(TE12L,Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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