Fabricante | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TK56A12N1,S4XMOSFET N-CH 120V 56A TO220SIS Toshiba Semiconductor and Storage |
2,258 | - |
RFQ |
![]() Ficha técnica |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Tc) | 10V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TPCC8002-H(TE12L,QMOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage |
2,660 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSV-H | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount |