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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPHR7904PB,L1XHQ

TPHR7904PB,L1XHQ

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage 		2,291 -

RFQ

TPHR7904PB,L1XHQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Ta) 6V, 10V 0.79mOhm @ 75A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 6650 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TK1R5R04PB,LXGQ

TK1R5R04PB,LXGQ

MOSFET N-CH 40V 160A D2PAK

Toshiba Semiconductor and Storage 		3,068 -

RFQ

TK1R5R04PB,LXGQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.5mOhm @ 80A, 10V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C Surface Mount
TK58A06N1,S4X

TK58A06N1,S4X

MOSFET N-CH 60V 58A TO220SIS

Toshiba Semiconductor and Storage 		2,801 -

RFQ

TK58A06N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 35W (Tc) 150°C (TJ) Through Hole
TK4R3A06PL,S4X

TK4R3A06PL,S4X

MOSFET N-CH 60V 68A TO220SIS

Toshiba Semiconductor and Storage 		2,219 -

RFQ

TK4R3A06PL,S4X

Ficha técnica

 Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 36W (Tc) 175°C (TJ) Through Hole
TK650A60F,S4X

TK650A60F,S4X

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage 		3,425 -

RFQ

TK650A60F,S4X

Ficha técnica

 Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1.16mA 34 nC @ 10 V ±30V 1320 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK30E06N1,S1X

TK30E06N1,S1X

MOSFET N-CH 60V 43A TO220

Toshiba Semiconductor and Storage 		3,640 -

RFQ

TK30E06N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Ta) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 53W (Tc) 150°C (TJ) Through Hole
TPWR7904PB,L1XHQ

TPWR7904PB,L1XHQ

MOSFET N-CH 40V 150A 8DSOP

Toshiba Semiconductor and Storage 		3,161 -

RFQ

TPWR7904PB,L1XHQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Ta) 6V, 10V 0.79mOhm @ 75A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 6650 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TK32E12N1,S1X

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

Toshiba Semiconductor and Storage 		2,959 -

RFQ

TK32E12N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 60A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 98W (Tc) 150°C (TJ) Through Hole
TK32A12N1,S4X

TK32A12N1,S4X

MOSFET N-CH 120V 32A TO220SIS

Toshiba Semiconductor and Storage 		3,907 -

RFQ

TK32A12N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 30W (Tc) 150°C (TJ) Through Hole
TK1K2A60F,S4X

TK1K2A60F,S4X

MOSFET N-CH 600V 6A TO220SIS

Toshiba Semiconductor and Storage 		3,249 -

RFQ

TK1K2A60F,S4X

Ficha técnica

 Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.2Ohm @ 3A, 10V 4V @ 630µA 21 nC @ 10 V ±30V 740 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK11A65W,S5X

TK11A65W,S5X

MOSFET N-CH 650V 11.1A TO220SIS

Toshiba Semiconductor and Storage 		148 -

RFQ

TK11A65W,S5X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 390mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
TPWR8503NL,L1Q

TPWR8503NL,L1Q

MOSFET N-CH 30V 150A 8DSOP

Toshiba Semiconductor and Storage 		2,014 -

RFQ

TPWR8503NL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 142W (Tc) 150°C (TJ) Surface Mount
TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

MOSFET N-CH 100V 92A 8DSOP

Toshiba Semiconductor and Storage 		2,840 -

RFQ

TPW4R50ANH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 92A (Tc) 10V 4.5mOhm @ 46A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 5200 pF @ 50 V - 800mW (Ta), 142W (Tc) 150°C (TJ) Surface Mount
2SK3564(STA4,Q,M)

2SK3564(STA4,Q,M)

MOSFET N-CH 900V 3A TO220SIS

Toshiba Semiconductor and Storage 		3,403 -

RFQ

2SK3564(STA4,Q,M)

Ficha técnica

 Tube π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V 4V @ 1mA 17 nC @ 10 V ±30V 700 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

MOSFET N-CH 900V 2.5A TO220SIS

Toshiba Semiconductor and Storage 		3,844 -

RFQ

2SK3566(STA4,Q,M)

Ficha técnica

 Tube π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 6.4Ohm @ 1.5A, 10V 4V @ 1mA 12 nC @ 10 V ±30V 470 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK3R1A04PL,S4X

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage 		2,788 -

RFQ

TK3R1A04PL,S4X

Ficha técnica

 Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) Through Hole
TPH4R50ANH,L1Q

TPH4R50ANH,L1Q

MOSFET N CH 100V 60A SOP ADV

Toshiba Semiconductor and Storage 		3,109 -

RFQ

TPH4R50ANH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 4.5mOhm @ 30A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 5200 pF @ 50 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK5R3A06PL,S4X

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		2,804 -

RFQ

TK5R3A06PL,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C Through Hole
TK22E10N1,S1X

TK22E10N1,S1X

MOSFET N CH 100V 52A TO220

Toshiba Semiconductor and Storage 		3,589 -

RFQ

TK22E10N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 72W (Tc) 150°C (TJ) Through Hole
TK22A10N1,S4X

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage 		2,965 -

RFQ

TK22A10N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
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