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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK7P60W5,RVQ

TK7P60W5,RVQ

MOSFET N-CH 600V 7A DPAK

Toshiba Semiconductor and Storage 		3,825 -

RFQ

TK7P60W5,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 670mOhm @ 3.5A, 10V 4.5V @ 350µA 16 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
TK2K2A60F,S4X

TK2K2A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		3,475 -

RFQ

TK2K2A60F,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4V @ 350µA 13 nC @ 10 V ±30V 450 pF @ 300 V - 30W (Tc) 150°C Through Hole
TPH1R104PB,L1XHQ

TPH1R104PB,L1XHQ

MOSFET N-CH 40V 120A 8SOP

Toshiba Semiconductor and Storage 		2,637 -

RFQ

TPH1R104PB,L1XHQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) 6V, 10V 1.14mOhm @ 60A, 10V 3V @ 500µA 55 nC @ 10 V ±20V 4560 pF @ 10 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
TPH6400ENH,L1Q

TPH6400ENH,L1Q

MOSFET N-CH 200V 13A 8SOP

Toshiba Semiconductor and Storage 		3,636 -

RFQ

TPH6400ENH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 13A (Ta) 10V 64mOhm @ 6.5A, 10V 4V @ 300µA 11.2 nC @ 10 V ±20V 1100 pF @ 100 V - 1.6W (Ta), 57W (Tc) 150°C (TJ) Surface Mount
TPH8R80ANH,L1Q

TPH8R80ANH,L1Q

MOSFET N CH 100V 32A 8-SOP

Toshiba Semiconductor and Storage 		3,864 -

RFQ

TPH8R80ANH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 8.8mOhm @ 16A, 10V 4V @ 500µA 33 nC @ 10 V ±20V 2800 pF @ 50 V - 1.6W (Ta), 61W (Tc) 150°C (TJ) Surface Mount
TK8R2A06PL,S4X

TK8R2A06PL,S4X

MOSFET N-CH 60V 50A TO220SIS

Toshiba Semiconductor and Storage 		3,154 -

RFQ

TK8R2A06PL,S4X

Ficha técnica

 Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 11.4mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4 nC @ 10 V ±20V 1990 pF @ 25 V - 36W (Tc) 175°C (TJ) Through Hole
XPH3R114MC,L1XHQ

XPH3R114MC,L1XHQ

MOSFET P-CH 40V 100A 8SOP

Toshiba Semiconductor and Storage 		2,669 -

RFQ

XPH3R114MC,L1XHQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 3.1mOhm @ 50A, 10V 2.1V @ 1mA 230 nC @ 10 V +20V, -10V 9500 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TPH1110FNH,L1Q

TPH1110FNH,L1Q

MOSFET N-CH 250V 10A 8SOP

Toshiba Semiconductor and Storage 		2,040 -

RFQ

TPH1110FNH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 250 V 10A (Ta) 10V 112mOhm @ 5A, 10V 4V @ 300µA 11 nC @ 10 V ±20V 1100 pF @ 100 V - 1.6W (Ta), 57W (Tc) 150°C (TJ) Surface Mount
XPH4R10ANB,L1XHQ

XPH4R10ANB,L1XHQ

MOSFET N-CH 100V 70A 8SOP

Toshiba Semiconductor and Storage 		3,609 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 6V, 10V 4.1mOhm @ 35A, 10V 3.5V @ 1mA 75 nC @ 10 V ±20V 4970 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TK110A10PL,S4X

TK110A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		3,252 -

RFQ

TK110A10PL,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4.5V, 10V 10.8mOhm @ 18A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 36W (Tc) 175°C Through Hole
TK1K0A60F,S4X

TK1K0A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		2,429 -

RFQ

TK1K0A60F,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 3.8A, 10V 4V @ 770µA 24 nC @ 10 V ±30V 890 pF @ 300 V - 40W (Tc) 150°C Through Hole
TPHR8504PL,L1Q

TPHR8504PL,L1Q

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage 		3,995 -

RFQ

TPHR8504PL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V 2.4V @ 1mA 103 nC @ 10 V ±20V 9600 pF @ 20 V - 1W (Ta), 170W (Tc) 175°C (TJ) Surface Mount
TK4K1A60F,S4X

TK4K1A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		2,541 -

RFQ

TK4K1A60F,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.1Ohm @ 1A, 10V 4V @ 190µA 8 nC @ 10 V ±30V 270 pF @ 300 V - 30W (Tc) 150°C Through Hole
TPH1500CNH,L1Q

TPH1500CNH,L1Q

MOSFET N-CH 150V 38A 8SOP

Toshiba Semiconductor and Storage 		2,542 -

RFQ

TPH1500CNH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Tc) 10V 15.4mOhm @ 19A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 75 V - 1.6W (Ta), 78W (Tc) 150°C Surface Mount
TK60F10N1L,LXGQ

TK60F10N1L,LXGQ

MOSFET N-CH 100V 60A TO220SM

Toshiba Semiconductor and Storage 		3,087 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Ta) 6V, 10V 6.11mOhm @ 30A, 10V 3.5V @ 500µA 60 nC @ 10 V ±20V 4320 pF @ 10 V - 205W (Tc) 175°C Surface Mount
TPH1R005PL,L1Q

TPH1R005PL,L1Q

MOSFET N-CH 45V 150A 8SOP

Toshiba Semiconductor and Storage 		3,536 -

RFQ

TPH1R005PL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 150A (Tc) 4.5V, 10V 1.04mOhm @ 50A, 10V 2.4V @ 1mA 99 nC @ 10 V ±20V 9600 pF @ 22.5 V - 960mW (Ta), 170W (Tc) 175°C (TJ) Surface Mount
TK100S04N1L,LQ

TK100S04N1L,LQ

MOSFET N-CH 40V 100A DPAK

Toshiba Semiconductor and Storage 		2,573 -

RFQ

TK100S04N1L,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 2.3mOhm @ 50A, 10V 2.5V @ 500µA 76 nC @ 10 V ±20V 5490 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
TK110E10PL,S1X

TK110E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		340 -

RFQ

TK110E10PL,S1X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 10.7mOhm @ 21A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 87W (Tc) 175°C Through Hole
TK40A06N1,S4X

TK40A06N1,S4X

MOSFET N-CH 60V 40A TO220SIS

Toshiba Semiconductor and Storage 		2,261 -

RFQ

TK40A06N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 10.4mOhm @ 20A, 10V 4V @ 300µA 23 nC @ 10 V ±20V 1700 pF @ 30 V - 30W (Tc) 150°C (TJ) Through Hole
TK40E06N1,S1X

TK40E06N1,S1X

MOSFET N-CH 60V 40A TO220

Toshiba Semiconductor and Storage 		3,384 -

RFQ

TK40E06N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 10.4mOhm @ 20A, 10V 4V @ 300µA 23 nC @ 10 V ±20V 1700 pF @ 30 V - 67W (Tc) 150°C (TJ) Through Hole
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