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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK13A50D(STA4,Q,M)

TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO220SIS

Toshiba Semiconductor and Storage 		2,353 -

RFQ

TK13A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 400mOhm @ 6.5A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45D(STA4,Q,M)

TK14A45D(STA4,Q,M)

MOSFET N-CH 450V 14A TO220SIS

Toshiba Semiconductor and Storage 		2,525 -

RFQ

TK14A45D(STA4,Q,M)

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 14A - 340mOhm @ 7A, 10V - - - - - - - Through Hole
TK14E65W,S1X

TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage 		3,154 -

RFQ

TK14E65W,S1X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK12E60W,S1VX

TK12E60W,S1VX

MOSFET N CH 600V 11.5A TO-220

Toshiba Semiconductor and Storage 		2,300 -

RFQ

TK12E60W,S1VX

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 110W (Tc) 150°C (TJ) Through Hole
TK110P10PL,RQ

TK110P10PL,RQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		1,766 -

RFQ

TK110P10PL,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 10.6mOhm @ 20A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 75W (Tc) 175°C Surface Mount
TK10J80E,S1E

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

Toshiba Semiconductor and Storage 		3,315 -

RFQ

TK10J80E,S1E

Ficha técnica

 Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) Through Hole
TK14N65W,S1F

TK14N65W,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage 		2,047 -

RFQ

TK14N65W,S1F

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK14A55D(STA4,Q,M)

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage 		3,219 -

RFQ

TK14A55D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK20V60W,LVQ

TK20V60W,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage 		2,384 -

RFQ

TK20V60W,LVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 170mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V Super Junction 156W (Tc) 150°C (TJ) Surface Mount
TK22V65X5,LQ

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage 		2,281 -

RFQ

TK22V65X5,LQ

Ficha técnica

 Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK15A50D(STA4,Q,M)

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage 		2,441 -

RFQ

TK15A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK20A60W5,S5VX

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage 		2,750 -

RFQ

TK20A60W5,S5VX

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TPH4R003NL,L1Q

TPH4R003NL,L1Q

MOSFET N-CH 30V 40A 8SOP

Toshiba Semiconductor and Storage 		4,249 -

RFQ

TPH4R003NL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 1.6W (Ta), 36W (Tc) 150°C (TJ) Surface Mount
TK6P65W,RQ

TK6P65W,RQ

MOSFET N-CH 650V 5.8A DPAK

Toshiba Semiconductor and Storage 		1,296 -

RFQ

TK6P65W,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) Surface Mount
TK10E80W,S1X

TK10E80W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		2,102 -

RFQ

TK10E80W,S1X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK16G60W,RVQ

TK16G60W,RVQ

MOSFET N CH 600V 15.8A D2PAK

Toshiba Semiconductor and Storage 		2,799 -

RFQ

TK16G60W,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Surface Mount
TK19A45D(STA4,Q,M)

TK19A45D(STA4,Q,M)

MOSFET N-CH 450V 19A TO220SIS

Toshiba Semiconductor and Storage 		3,786 -

RFQ

TK19A45D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK18A50D(STA4,Q,M)

TK18A50D(STA4,Q,M)

MOSFET N-CH 500V 18A TO220SIS

Toshiba Semiconductor and Storage 		3,693 -

RFQ

TK18A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK210V65Z,LQ

TK210V65Z,LQ

MOSFET N-CH 650V 15A 5DFN

Toshiba Semiconductor and Storage 		4,977 -

RFQ

TK210V65Z,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 210mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Surface Mount
TPH1R405PL,L1Q

TPH1R405PL,L1Q

MOSFET N-CH 45V 120A 8SOP

Toshiba Semiconductor and Storage 		3,993 -

RFQ

TPH1R405PL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 120A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2.4V @ 500µA 74 nC @ 10 V ±20V 6300 pF @ 22.5 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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