Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK10A60W5,S5VX

TK10A60W5,S5VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage
2,656 -

RFQ

TK10A60W5,S5VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 450mOhm @ 4.9A, 10V 4.5V @ 500µA 25 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

Toshiba Semiconductor and Storage
2,444 -

RFQ

TK8A65D(STA4,Q,M)

Ficha técnica

Bulk π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

Toshiba Semiconductor and Storage
134 -

RFQ

TK65E10N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 148A (Ta) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 192W (Tc) 150°C (TJ) Through Hole
TK30A06N1,S4X

TK30A06N1,S4X

MOSFET N-CH 60V 30A TO220SIS

Toshiba Semiconductor and Storage
277 -

RFQ

TK30A06N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 25W (Tc) 150°C (TJ) Through Hole
TK1R4F04PB,LXGQ

TK1R4F04PB,LXGQ

MOSFET N-CH 40V 160A TO220SM

Toshiba Semiconductor and Storage
1,000 -

RFQ

TK1R4F04PB,LXGQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.9mOhm @ 80A, 6V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C Surface Mount
TK750A60F,S4X

TK750A60F,S4X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage
150 -

RFQ

TK750A60F,S4X

Ficha técnica

Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 1130 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK380A65Y,S4X

TK380A65Y,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
200 -

RFQ

TK380A65Y,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK10A50W,S5X

TK10A50W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
152 -

RFQ

TK10A50W,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK4R1A10PL,S4X

TK4R1A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,532 -

RFQ

TK4R1A10PL,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 40A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6320 pF @ 50 V - 54W (Tc) 175°C Through Hole
TK72E08N1,S1X

TK72E08N1,S1X

MOSFET N-CH 80V 72A TO220

Toshiba Semiconductor and Storage
2,741 -

RFQ

TK72E08N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 72A (Ta) 10V 4.3mOhm @ 36A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5500 pF @ 40 V - 192W (Tc) 150°C (TJ) Through Hole
TK10A80E,S4X

TK10A80E,S4X

MOSFET N-CH 800V 10A TO220SIS

Toshiba Semiconductor and Storage
3,656 -

RFQ

TK10A80E,S4X

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK100E08N1,S1X

TK100E08N1,S1X

MOSFET N-CH 80V 100A TO220

Toshiba Semiconductor and Storage
2,998 -

RFQ

TK100E08N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 255W (Tc) 150°C (TJ) Through Hole
TK16J60W5,S1VQ

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,758 -

RFQ

TK16J60W5,S1VQ

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK20J60W,S1VE

TK20J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,289 -

RFQ

TK20J60W,S1VE

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C Through Hole
TK28N65W5,S1F

TK28N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,719 -

RFQ

TK28N65W5,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 130mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK065N65Z,S1F

TK065N65Z,S1F

MOSFET N-CH 650V 38A TO247

Toshiba Semiconductor and Storage
3,205 -

RFQ

TK065N65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
TK49N65W5,S1F

TK49N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,442 -

RFQ

TK49N65W5,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 57mOhm @ 24.6A, 10V 4.5V @ 2.5mA 185 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK39J60W5,S1VQ

TK39J60W5,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage
2,908 -

RFQ

TK39J60W5,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK62N60W,S1VF

TK62N60W,S1VF

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage
3,388 -

RFQ

TK62N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
TK6A80E,S4X

TK6A80E,S4X

MOSFET N-CH 800V 6A TO220SIS

Toshiba Semiconductor and Storage
2,678 -

RFQ

TK6A80E,S4X

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4V @ 600µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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