Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK40J20D,S1F(O

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage
3,668 -

RFQ

Tray π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C Through Hole
TPCC8104,L1Q

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage
3,181 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C Surface Mount
TK12J60W,S1VE(S

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage
2,899 -

RFQ

Tray - Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C Through Hole
TPCA8128,L1Q

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage
2,952 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C Surface Mount
TK28N65W,S1F

TK28N65W,S1F

MOSFET N-CH 650V 27.6A TO247

Toshiba Semiconductor and Storage
3,759 -

RFQ

TK28N65W,S1F

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) Through Hole
TK20N60W,S1VF

TK20N60W,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage
2,140 -

RFQ

TK20N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK110Z65Z,S1F

TK110Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage
3,823 -

RFQ

TK110Z65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
TK430A60F,S4X(S

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage
3,785 -

RFQ

TK430A60F,S4X(S

Ficha técnica

Bulk U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK370A60F,S4X(S

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage
2,600 -

RFQ

TK370A60F,S4X(S

Ficha técnica

Bulk U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK20A60U(Q,M)

TK20A60U(Q,M)

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage
3,453 -

RFQ

TK20A60U(Q,M)

Ficha técnica

Bulk DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 5V @ 1mA 27 nC @ 10 V ±30V 1470 pF @ 10 V - 45W (Tc) 150°C (TJ) Through Hole
TK35A65W5,S5X

TK35A65W5,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage
2,116 -

RFQ

TK35A65W5,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
SSM3K15CT,L3F

SSM3K15CT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
3,335 -

RFQ

SSM3K15CT,L3F

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
TK065Z65Z,S1F

TK065Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage
3,429 -

RFQ

TK065Z65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
TK31E60W,S1VX

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage
2,221 -

RFQ

TK31E60W,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK31A60W,S4VX

TK31A60W,S4VX

MOSFET N-CH 600V 30.8A TO220SIS

Toshiba Semiconductor and Storage
3,074 -

RFQ

TK31A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 45W (Tc) 150°C (TJ) Through Hole
TK35N65W5,S1F

TK35N65W5,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage
3,745 -

RFQ

TK35N65W5,S1F

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) Through Hole
TK31J60W,S1VQ

TK31J60W,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage
3,066 -

RFQ

TK31J60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK31J60W5,S1VQ

TK31J60W5,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage
2,553 -

RFQ

TK31J60W5,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK62N60W5,S1VF

TK62N60W5,S1VF

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,996 -

RFQ

TK62N60W5,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 45mOhm @ 30.9A, 10V 4.5V @ 3.1mA 205 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK100L60W,VQ

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage
3,315 -

RFQ

TK100L60W,VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Ta) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V Super Junction 797W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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