Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPCA8026(TE12L,Q,M

TPCA8026(TE12L,Q,M

MOSFET N-CH 30V 45A 8SOP

Toshiba Semiconductor and Storage
2,193 -

RFQ

TPCA8026(TE12L,Q,M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 2.2mOhm @ 23A, 10V 2.5V @ 1mA 113 nC @ 10 V ±20V 4200 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TK12A60W,S4VX

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage
2,471 -

RFQ

TK12A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 35W (Tc) 150°C (TJ) Through Hole
TPH2R306NH1,LQ

TPH2R306NH1,LQ

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Toshiba Semiconductor and Storage
4,850 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 136A (Tc) 6.5V, 10V 2.3mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6100 pF @ 30 V - 800mW (Ta), 170W (Tc) 150°C Surface Mount
TPH2R306NH,L1Q

TPH2R306NH,L1Q

MOSFET N-CH 60V 60A 8SOP

Toshiba Semiconductor and Storage
1,464 -

RFQ

TPH2R306NH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6.5V, 10V 2.3mOhm @ 30A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6100 pF @ 30 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK25E60X5,S1X

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage
3,838 -

RFQ

TK25E60X5,S1X

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK25N60X5,S1F

TK25N60X5,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage
2,779 -

RFQ

TK25N60X5,S1F

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK125V65Z,LQ

TK125V65Z,LQ

MOSFET N-CH 650V 24A 5DFN

Toshiba Semiconductor and Storage
7,486 -

RFQ

TK125V65Z,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 125mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Surface Mount
TPH2R408QM,L1Q

TPH2R408QM,L1Q

MOSFET N-CH 80V 120A 8SOP

Toshiba Semiconductor and Storage
7,840 -

RFQ

TPH2R408QM,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.43mOhm @ 50A, 10V 3.5V @ 1mA 87 nC @ 10 V ±20V 8300 pF @ 40 V - 3W (Ta), 210W (Tc) 175°C Surface Mount
XPW6R30ANB,L1XHQ

XPW6R30ANB,L1XHQ

MOSFET N-CH 100V 45A 8DSOP

Toshiba Semiconductor and Storage
3,022 -

RFQ

XPW6R30ANB,L1XHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta) 6V, 10V 6.3mOhm @ 22.5A, 10V 3.5V @ 500µA 52 nC @ 10 V ±20V 3240 pF @ 10 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
TK20V60W5,LVQ

TK20V60W5,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage
424 -

RFQ

TK20V60W5,LVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C (TJ) Surface Mount
TK170V65Z,LQ

TK170V65Z,LQ

MOSFET N-CH 650V 18A 5DFN

Toshiba Semiconductor and Storage
2,470 -

RFQ

TK170V65Z,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 170mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Surface Mount
TK31V60W5,LVQ

TK31V60W5,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage
1,660 -

RFQ

TK31V60W5,LVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 109mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TA) Surface Mount
TK20E60W,S1VX

TK20E60W,S1VX

MOSFET N-CH 600V 20A TO220

Toshiba Semiconductor and Storage
3,915 -

RFQ

TK20E60W,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK28E65W,S1X

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,316 -

RFQ

TK28E65W,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TPCA8109(TE12L1,V

TPCA8109(TE12L1,V

MOSFET P-CH 30V 24A 8SOP

Toshiba Semiconductor and Storage
3,484 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 9mOhm @ 12A, 10V 2V @ 500µA 56 nC @ 10 V +20V, -25V 2400 pF @ 10 V - 1.6W (Ta), 30W (Tc) 150°C Surface Mount
TK110N65Z,S1F

TK110N65Z,S1F

POWER MOSFET TRANSISTOR TO-247(O

Toshiba Semiconductor and Storage
3,300 -

RFQ

TK110N65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage
2,710 -

RFQ

TK31V60W,LVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 240W (Tc) 150°C (TJ) Surface Mount
TPCC8104,L1Q(CM

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage
3,575 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C Surface Mount
TPCC8105,L1Q(CM

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage
3,422 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C Surface Mount
TPCC8136.LQ

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage
2,387 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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