Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3K116TU,LF

SSM3K116TU,LF

MOSFET N-CH 30V 2.2A UFM

Toshiba Semiconductor and Storage
1,411 -

RFQ

SSM3K116TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 500mA, 4.5V 1.1V @ 100µA - ±12V 245 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

MOSFET N-CH 500V 12.5A TO220SIS

Toshiba Semiconductor and Storage
2,711 -

RFQ

TK13A50DA(STA4,Q,M

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Ta) 10V 470mOhm @ 6.3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45DA(STA4,QM)

TK14A45DA(STA4,QM)

MOSFET N-CH 450V 13.5A TO220SIS

Toshiba Semiconductor and Storage
3,152 -

RFQ

TK14A45DA(STA4,QM)

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 13.5A - 410mOhm @ 6.8A, 10V - - - - - - - Through Hole
TK10Q60W,S1VQ

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

Toshiba Semiconductor and Storage
3,159 -

RFQ

TK10Q60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
TK25V60X,LQ

TK25V60X,LQ

MOSFET N-CH 600V 25A 4DFN

Toshiba Semiconductor and Storage
2,757 -

RFQ

TK25V60X,LQ

Ficha técnica

Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 135mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
SSM6K211FE,LF

SSM6K211FE,LF

MOSFET N-CH 20V 3.2A ES6

Toshiba Semiconductor and Storage
3,994 -

RFQ

SSM6K211FE,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4.5V 47mOhm @ 2A, 4.5V 1V @ 1mA 10.8 nC @ 4.5 V ±10V 510 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K361TU,LXHF

SSM3K361TU,LXHF

AECQ MOSFET NCH 100V 3.5A SOT323

Toshiba Semiconductor and Storage
1,103 -

RFQ

SSM3K361TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1W (Ta) 175°C Surface Mount
TK10A60W,S4VX

TK10A60W,S4VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage
2,974 -

RFQ

TK10A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK12A55D(STA4,Q,M)

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage
3,220 -

RFQ

TK12A55D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK10A80W,S4X

TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

Toshiba Semiconductor and Storage
3,937 -

RFQ

TK10A80W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK25V60X5,LQ

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage
2,685 -

RFQ

TK25V60X5,LQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK19A50W,S5X

TK19A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,921 -

RFQ

TK19A50W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK13A55DA(STA4,QM)

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage
2,345 -

RFQ

TK13A55DA(STA4,QM)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK16A60W,S4X

TK16A60W,S4X

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage
3,867 -

RFQ

TK16A60W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 40 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) - Through Hole
TK7E80W,S1X

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage
3,537 -

RFQ

TK7E80W,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C Through Hole
TPN7R504PL,LQ

TPN7R504PL,LQ

MOSFET N-CH 40V 38A 8TSON

Toshiba Semiconductor and Storage
2,466 -

RFQ

TPN7R504PL,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Tc) 4.5V, 10V 7.5mOhm @ 19A, 10V 2.4V @ 200µA 24 nC @ 10 V ±20V 2040 pF @ 20 V - 610mW (Ta), 61W (Tc) 175°C Surface Mount
TK17E65W,S1X

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage
2,258 -

RFQ

TK17E65W,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK7A80W,S4X

TK7A80W,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,655 -

RFQ

TK7A80W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK16A60W5,S4VX

TK16A60W5,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage
3,082 -

RFQ

TK16A60W5,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
TK12A60D(STA4,Q,M)

TK12A60D(STA4,Q,M)

MOSFET N-CH 600V 12A TO220SIS

Toshiba Semiconductor and Storage
3,736 -

RFQ

TK12A60D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 550mOhm @ 6A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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