Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SSM3K116TU,LFMOSFET N-CH 30V 2.2A UFM Toshiba Semiconductor and Storage |
1,411 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | ±12V | 245 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK13A50DA(STA4,Q,MMOSFET N-CH 500V 12.5A TO220SIS Toshiba Semiconductor and Storage |
2,711 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12.5A (Ta) | 10V | 470mOhm @ 6.3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK14A45DA(STA4,QM)MOSFET N-CH 450V 13.5A TO220SIS Toshiba Semiconductor and Storage |
3,152 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 13.5A | - | 410mOhm @ 6.8A, 10V | - | - | - | - | - | - | - | Through Hole |
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TK10Q60W,S1VQMOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage |
3,159 | - |
RFQ |
![]() Ficha técnica |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | Through Hole |
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TK25V60X,LQMOSFET N-CH 600V 25A 4DFN Toshiba Semiconductor and Storage |
2,757 | - |
RFQ |
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Tape & Reel (TR) | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 135mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | Surface Mount |
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SSM6K211FE,LFMOSFET N-CH 20V 3.2A ES6 Toshiba Semiconductor and Storage |
3,994 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 47mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8 nC @ 4.5 V | ±10V | 510 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K361TU,LXHFAECQ MOSFET NCH 100V 3.5A SOT323 Toshiba Semiconductor and Storage |
1,103 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1W (Ta) | 175°C | Surface Mount |
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TK10A60W,S4VXMOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage |
2,974 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole |
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TK12A55D(STA4,Q,M)MOSFET N-CH 550V 12A TO220SIS Toshiba Semiconductor and Storage |
3,220 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK10A80W,S4XMOSFET N-CH 800V 9.5A TO220SIS Toshiba Semiconductor and Storage |
3,937 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19 nC @ 10 V | ±20V | 1150 pF @ 300 V | - | 40W (Tc) | 150°C | Through Hole |
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TK25V60X5,LQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,685 | - |
RFQ |
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Tape & Reel (TR) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | Surface Mount |
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TK19A50W,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,921 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | 150°C | Through Hole |
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TK13A55DA(STA4,QM)MOSFET N-CH 550V 12.5A TO220SIS Toshiba Semiconductor and Storage |
2,345 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK16A60W,S4XMOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage |
3,867 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | - | Through Hole |
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TK7E80W,S1XMOSFET N-CH 800V 6.5A TO220 Toshiba Semiconductor and Storage |
3,537 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 110W (Tc) | 150°C | Through Hole |
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TPN7R504PL,LQMOSFET N-CH 40V 38A 8TSON Toshiba Semiconductor and Storage |
2,466 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 38A (Tc) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | 2.4V @ 200µA | 24 nC @ 10 V | ±20V | 2040 pF @ 20 V | - | 610mW (Ta), 61W (Tc) | 175°C | Surface Mount |
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TK17E65W,S1XMOSFET N-CH 650V 17.3A TO220 Toshiba Semiconductor and Storage |
2,258 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |
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TK7A80W,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
2,655 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 35W (Tc) | 150°C | Through Hole |
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TK16A60W5,S4VXMOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage |
3,082 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole |
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TK12A60D(STA4,Q,M)MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage |
3,736 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 550mOhm @ 6A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |