Acerca de nosotros
Fudong Communication (Shenzhen) Grupo Co., Ltd.+86 075582561136 Fudong Communication (Shenzhen) Grupo Co., Ltd.[email protected]
Idioma
Subir BOM
Cart
Todas las categorías

Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TW140N120C,S1F

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage 		105 -

RFQ

TW140N120C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C Through Hole
TW083N65C,S1F

TW083N65C,S1F

G3 650V SIC-MOSFET TO-247 83MOH

Toshiba Semiconductor and Storage 		175 -

RFQ

TW083N65C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 30A (Tc) 18V 113mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C Through Hole
TW060N120C,S1F

TW060N120C,S1F

G3 1200V SIC-MOSFET TO-247 60MO

Toshiba Semiconductor and Storage 		165 -

RFQ

TW060N120C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C Through Hole
TW027N65C,S1F

TW027N65C,S1F

G3 650V SIC-MOSFET TO-247 27MOH

Toshiba Semiconductor and Storage 		180 -

RFQ

TW027N65C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C Through Hole
TW045N120C,S1F

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Toshiba Semiconductor and Storage 		150 -

RFQ

TW045N120C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 40A (Tc) 18V 59mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C Through Hole
TW030N120C,S1F

TW030N120C,S1F

G3 1200V SIC-MOSFET TO-247 30MO

Toshiba Semiconductor and Storage 		175 -

RFQ

TW030N120C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C Through Hole
TW015N65C,S1F

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage 		165 -

RFQ

TW015N65C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C Through Hole
TW015N120C,S1F

TW015N120C,S1F

G3 1200V SIC-MOSFET TO-247 15MO

Toshiba Semiconductor and Storage 		160 -

RFQ

TW015N120C,S1F

Ficha técnica

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C Through Hole
TK11A50D(STA4,Q,M)

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage 		3,195 -

RFQ

TK11A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
2SK1828TE85LF

2SK1828TE85LF

MOSFET N-CH 20V 50MA SC59

Toshiba Semiconductor and Storage 		12,026 -

RFQ

2SK1828TE85LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V 1.5V @ 100µA - 10V 5.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM6K208FE,LF

SSM6K208FE,LF

MOSFET N-CH 30V 1.9A ES6

Toshiba Semiconductor and Storage 		7,940 -

RFQ

SSM6K208FE,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3K7002CFU,LF

SSM3K7002CFU,LF

MOSFET N-CH 60V 170MA USM

Toshiba Semiconductor and Storage 		2,462 -

RFQ

SSM3K7002CFU,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J15F,LF

SSM3J15F,LF

MOSFET P-CH 30V 100MA S-MINI

Toshiba Semiconductor and Storage 		2,369 -

RFQ

SSM3J15F,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 200mW (Ta) 150°C Surface Mount
SSM3J35AMFV,L3F

SSM3J35AMFV,L3F

MOSFET P-CH 20V 250MA VESM

Toshiba Semiconductor and Storage 		11,424 -

RFQ

SSM3J35AMFV,L3F

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3J35AFS,LF

SSM3J35AFS,LF

MOSFET P-CH 20V 250MA SSM

Toshiba Semiconductor and Storage 		5,913 -

RFQ

SSM3J35AFS,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
TK12A50W,S5X

TK12A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,936 -

RFQ

TK12A50W,S5X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage 		3,060 -

RFQ

TK7A65D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK9A65W,S5X

TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO220SIS

Toshiba Semiconductor and Storage 		2,368 -

RFQ

TK9A65W,S5X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 500mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
SSM3K44FS,LF

SSM3K44FS,LF

MOSFET N-CH 30V 100MA SSM

Toshiba Semiconductor and Storage 		2,604 -

RFQ

SSM3K44FS,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 8.5 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
SSM3K72CTC,L3F

SSM3K72CTC,L3F

MOSFET N-CH 60V 150MA CST3C

Toshiba Semiconductor and Storage 		9,780 -

RFQ

SSM3K72CTC,L3F

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
Total 1042 Record«Prev1... 4142434445464748...53Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

 Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

 Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

 Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario