Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3K35CT,L3F

SSM3K35CT,L3F

MOSFET N-CH 20V 180MA CST3

Toshiba Semiconductor and Storage
22,572 -

RFQ

SSM3K35CT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V 1V @ 1mA - ±10V 9.5 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K15ACTC,L3F

SSM3K15ACTC,L3F

MOSFET N-CH 30V 100MA CST3C

Toshiba Semiconductor and Storage
8,329 -

RFQ

SSM3K15ACTC,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 500mW (Ta) 150°C Surface Mount
SSM6K405TU,LF

SSM6K405TU,LF

MOSFET N-CH 20V 2A UF6

Toshiba Semiconductor and Storage
2,758 -

RFQ

SSM6K405TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4V 126mOhm @ 1A, 4V 1V @ 1mA 3.4 nC @ 4 V ±10V 195 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3J35CT,L3F

SSM3J35CT,L3F

MOSFET P-CHANNEL 20V 100MA CST3

Toshiba Semiconductor and Storage
7,163 -

RFQ

SSM3J35CT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
TK12A45D(STA4,Q,M)

TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

Toshiba Semiconductor and Storage
2,124 -

RFQ

TK12A45D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK6A60W,S4VX

TK6A60W,S4VX

MOSFET N-CH 600V 6.2A TO220SIS

Toshiba Semiconductor and Storage
2,646 -

RFQ

TK6A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 750mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK8Q60W,S1VQ

TK8Q60W,S1VQ

MOSFET N-CH 600V 8A IPAK

Toshiba Semiconductor and Storage
2,455 -

RFQ

TK8Q60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 80W (Tc) 150°C (TJ) Through Hole
TPCA8047-H(T2L1,VM

TPCA8047-H(T2L1,VM

MOSFET N-CH 40V 32A 8SOP

Toshiba Semiconductor and Storage
2,600 -

RFQ

TPCA8047-H(T2L1,VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 32A (Ta) 4.5V, 10V 7.3mOhm @ 16A, 10V 2.3V @ 500µA 43 nC @ 10 V ±20V 3365 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C Surface Mount
TK13E25D,S1X(S

TK13E25D,S1X(S

MOSFET N-CH 250V 13A TO220-3

Toshiba Semiconductor and Storage
2,151 -

RFQ

TK13E25D,S1X(S

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Ta) 10V 250mOhm @ 6.5A, 10V 3.5V @ 1mA 25 nC @ 10 V ±20V 1100 pF @ 100 V - 102W (Tc) 150°C (TJ) Through Hole
TK10A55D(STA4,Q,M)

TK10A55D(STA4,Q,M)

MOSFET N-CH 550V 10A TO220SIS

Toshiba Semiconductor and Storage
3,302 -

RFQ

TK10A55D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK72E12N1,S1X

TK72E12N1,S1X

MOSFET N CH 120V 72A TO-220

Toshiba Semiconductor and Storage
3,458 -

RFQ

TK72E12N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Ta) 10V 4.4mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 255W (Tc) 150°C (TJ) Through Hole
SSM3J36TU,LF

SSM3J36TU,LF

MOSFET P-CH 20V 330MA UFM

Toshiba Semiconductor and Storage
2,578 -

RFQ

SSM3J36TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 330mA (Ta) 1.5V, 4.5V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2 nC @ 4 V ±8V 43 pF @ 10 V - 800mW (Ta) 150°C Surface Mount
SSM3J35CTC,L3F

SSM3J35CTC,L3F

MOSFET P-CH 20V 250MA CST3C

Toshiba Semiconductor and Storage
9,880 -

RFQ

SSM3J35CTC,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J46CTB(TPL3)

SSM3J46CTB(TPL3)

MOSFET P-CH 20V 2A CST3B

Toshiba Semiconductor and Storage
2,693 -

RFQ

SSM3J46CTB(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - - 150°C (TJ) Surface Mount
SSM3J327R,LF

SSM3J327R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage
4,636 -

RFQ

SSM3J327R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 290 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6J50TU,LF

SSM6J50TU,LF

MOSFET P-CH 20V 2.5A UF6

Toshiba Semiconductor and Storage
3,437 -

RFQ

SSM6J50TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2V, 4.5V 64mOhm @ 1.5A, 4.5V 1.2V @ 200µA - ±10V 800 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3J371R,LXHF

SSM3J371R,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage
1,248 -

RFQ

SSM3J371R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 55mOhm @ 3A, 4.5V 1V @ 1mA 10.4 nC @ 4.5 V +6V, -8V 630 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3H137TU,LF

SSM3H137TU,LF

MOSFET N-CH 34V 2A UFM

Toshiba Semiconductor and Storage
2,398 -

RFQ

SSM3H137TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 34 V 2A (Ta) 4V, 10V 240mOhm @ 1A, 10V 1.7V @ 1mA 3 nC @ 10 V ±20V 119 pF @ 10 V - 800mW (Ta) 150°C Surface Mount
SSM6J422TU,LXHF

SSM6J422TU,LXHF

SMOS P-CH VDSS=-20V, VGSS=+6/-8V

Toshiba Semiconductor and Storage
2,720 -

RFQ

SSM6J422TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 42.7mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3K62TU,LF

SSM3K62TU,LF

MOSFET N-CH 20V 800MA UFM

Toshiba Semiconductor and Storage
1,951 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 57mOhm @ 800mA, 4.5V 1V @ 1mA 2 nC @ 4.5 V ±8V 177 pF @ 10 V - 1W (Ta) 150°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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