Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK12A50D(STA4,Q,M)

TK12A50D(STA4,Q,M)

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage
3,920 -

RFQ

TK12A50D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK13A45D(STA4,Q,M)

TK13A45D(STA4,Q,M)

MOSFET N-CH 450V 13A TO220SIS

Toshiba Semiconductor and Storage
3,337 -

RFQ

TK13A45D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 460mOhm @ 6.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
SSM6J401TU,LF

SSM6J401TU,LF

MOSFET P-CH 30V 2.5A UF6

Toshiba Semiconductor and Storage
2,738 -

RFQ

SSM6J401TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 4V, 10V 73mOhm @ 2A, 10V 2.6V @ 1mA 16 nC @ 10 V ±20V 730 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
2SK3700(F)

2SK3700(F)

MOSFET N-CH 900V 5A TO3P

Toshiba Semiconductor and Storage
3,816 -

RFQ

2SK3700(F)

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) - 2.5Ohm @ 3A, 10V 4V @ 1mA 28 nC @ 10 V - 1150 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
SSM6P16FE(TE85L,F)

SSM6P16FE(TE85L,F)

MOSFET P-CH 20V 0.1A ES6

Toshiba Semiconductor and Storage
3,892 -

RFQ

SSM6P16FE(TE85L,F)

Ficha técnica

Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) - 8Ohm @ 10mA, 4V - - - 11 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J334R,LF

SSM3J334R,LF

MOSFET P-CH 30V 4A SOT23F

Toshiba Semiconductor and Storage
760 -

RFQ

SSM3J334R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 71mOhm @ 3A, 10V 2V @ 100µA 5.9 nC @ 10 V ±20V 280 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K341R,LF

SSM3K341R,LF

MOSFET N-CH 60V 6A SOT-23F

Toshiba Semiconductor and Storage
2,054 -

RFQ

SSM3K341R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.2W (Ta) -55°C ~ 175°C (TJ) Surface Mount
SSM6J215FE(TE85L,F

SSM6J215FE(TE85L,F

MOSFET P CH 20V 3.4A ES6

Toshiba Semiconductor and Storage
6,090 -

RFQ

SSM6J215FE(TE85L,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 1.5V, 4.5V 59mOhm @ 3A, 4.5V 1V @ 1mA 10.4 nC @ 4.5 V ±8V 630 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K337R,LF

SSM3K337R,LF

MOSFET N-CH 38V 2A SOT23F

Toshiba Semiconductor and Storage
1,894 -

RFQ

SSM3K337R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 38 V 2A (Ta) 4V, 10V 150mOhm @ 2A, 10V 1.7V @ 1mA 3 nC @ 10 V ±20V 120 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6J801R,LF

SSM6J801R,LF

MOSFET P-CH 20V 6A 6TSOP

Toshiba Semiconductor and Storage
2,760 -

RFQ

SSM6J801R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 32.5mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
TK12A53D(STA4,Q,M)

TK12A53D(STA4,Q,M)

MOSFET N-CH 525V 12A TO220SIS

Toshiba Semiconductor and Storage
3,670 -

RFQ

TK12A53D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 12A (Ta) 10V 580mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK11A55D(STA4,Q,M)

TK11A55D(STA4,Q,M)

MOSFET N-CH 550V 11A TO220SIS

Toshiba Semiconductor and Storage
2,038 -

RFQ

TK11A55D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 11A (Ta) 10V 630mOhm @ 5.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK16E60W,S1VX

TK16E60W,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage
2,329 -

RFQ

TK16E60W,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
SSM6J414TU,LF

SSM6J414TU,LF

MOSFET P CH 20V 6A UF6

Toshiba Semiconductor and Storage
2,986 -

RFQ

SSM6J414TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 22.5mOhm @ 6A, 4.5V 1V @ 1mA 23.1 nC @ 4.5 V ±8V 1650 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K333R,LF

SSM3K333R,LF

MOSFET N CH 30V 6A 2-3Z1A

Toshiba Semiconductor and Storage
2,261 -

RFQ

SSM3K333R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 28mOhm @ 5A, 10V 2.5V @ 100µA 3.4 nC @ 4.5 V ±20V 436 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J356R,LXHF

SSM3J356R,LXHF

AECQ MOSFET PCH -60V -2A SOT23F

Toshiba Semiconductor and Storage
3,098 -

RFQ

SSM3J356R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4V, 10V 300mOhm @ 1A, 10V 2V @ 1mA 8.3 nC @ 10 V +10V, -20V 330 pF @ 10 V - 1W (Ta) 150°C Surface Mount
TK2R9E10PL,S1X

TK2R9E10PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,959 -

RFQ

TK2R9E10PL,S1X

Ficha técnica

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 4.5V, 10V 2.9mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 306W (Tc) 175°C Through Hole
TK8A60W,S4VX

TK8A60W,S4VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage
3,075 -

RFQ

TK8A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
SSM6K341NU,LF

SSM6K341NU,LF

MOSFET N-CH 60V 6A 6UDFNB

Toshiba Semiconductor and Storage
2,285 -

RFQ

SSM6K341NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 2.5W (Ta) 150°C Surface Mount
SSM3K361R,LF

SSM3K361R,LF

MOSFET N-CH 100V 3.5A SOT-23F

Toshiba Semiconductor and Storage
6,600 -

RFQ

SSM3K361R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.2W (Ta) 175°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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