Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK8A65W,S5X

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage
2,530 -

RFQ

TK8A65W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK6Q60W,S1VQ

TK6Q60W,S1VQ

MOSFET N-CH 600V 6.2A IPAK

Toshiba Semiconductor and Storage
2,988 -

RFQ

TK6Q60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Through Hole
TK18A30D,S5X

TK18A30D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,344 -

RFQ

TK18A30D,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 18A (Ta) 10V 139mOhm @ 9A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2600 pF @ 100 V - 45W (Tc) 150°C Through Hole
TK25A20D,S5X

TK25A20D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,173 -

RFQ

TK25A20D,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Ta) 10V 70mOhm @ 12.5A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2550 pF @ 100 V - 45W (Tc) 150°C Through Hole
TK8Q65W,S1Q

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage
2,947 -

RFQ

TK8Q65W,S1Q

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
TK11A45D(STA4,Q,M)

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage
2,396 -

RFQ

TK11A45D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK12Q60W,S1VQ

TK12Q60W,S1VQ

MOSFET N CH 600V 11.5A IPAK

Toshiba Semiconductor and Storage
3,297 -

RFQ

TK12Q60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TK10V60W,LVQ

TK10V60W,LVQ

MOSFET N-CH 600V 9.7A 4DFN

Toshiba Semiconductor and Storage
3,395 -

RFQ

TK10V60W,LVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 88.3W (Tc) 150°C (TJ) Surface Mount
TK16G60W5,RVQ

TK16G60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
2,867 -

RFQ

TK16G60W5,RVQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Surface Mount
TK090E65Z,S1X

TK090E65Z,S1X

650V DTMOS VI TO-220 90MOHM

Toshiba Semiconductor and Storage
200 -

RFQ

TK090E65Z,S1X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK10A50D(STA4,Q,M)

TK10A50D(STA4,Q,M)

MOSFET N-CH 500V 10A TO220SIS

Toshiba Semiconductor and Storage
2,291 -

RFQ

TK10A50D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK7A60W,S4VX

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage
2,160 -

RFQ

TK7A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK7Q60W,S1VQ

TK7Q60W,S1VQ

MOSFET N-CH 600V 7A IPAK

Toshiba Semiconductor and Storage
2,882 -

RFQ

TK7Q60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
TK6A65D(STA4,Q,M)

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage
2,588 -

RFQ

TK6A65D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK10A60W,S4X

TK10A60W,S4X

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage
2,420 -

RFQ

TK10A60W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) - Through Hole
TK16V60W5,LVQ

TK16V60W5,LVQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage
2,063 -

RFQ

TK16V60W5,LVQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 245mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 139W (Tc) 150°C Surface Mount
TK14V65W,LQ

TK14V65W,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage
3,054 -

RFQ

TK14V65W,LQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 280mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 139W (Tc) 150°C Surface Mount
TW107N65C,S1F

TW107N65C,S1F

G3 650V SIC-MOSFET TO-247 107MO

Toshiba Semiconductor and Storage
125 -

RFQ

TW107N65C,S1F

Ficha técnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 20A (Tc) 18V 145mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C Through Hole
TK9A55DA(STA4,Q,M)

TK9A55DA(STA4,Q,M)

MOSFET N-CH 550V 8.5A TO220SIS

Toshiba Semiconductor and Storage
2,868 -

RFQ

TK9A55DA(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

Toshiba Semiconductor and Storage
2,953 -

RFQ

TK9A60D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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