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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK5A60D(STA4,Q,M)

TK5A60D(STA4,Q,M)

MOSFET N-CH 600V 5A TO220SIS

Toshiba Semiconductor and Storage 		2,970 -

RFQ

TK5A60D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A65DA(STA4,Q,M)

TK5A65DA(STA4,Q,M)

MOSFET N-CH 650V 4.5A TO220SIS

Toshiba Semiconductor and Storage 		3,833 -

RFQ

TK5A65DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Ta) 10V 1.67Ohm @ 2.3A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK7A55D(STA4,Q,M)

TK7A55D(STA4,Q,M)

MOSFET N-CH 550V 7A TO220SIS

Toshiba Semiconductor and Storage 		3,596 -

RFQ

TK7A55D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 7A (Ta) 10V 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A65W,S5X

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage 		2,356 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK8A45D(STA4,Q,M)

TK8A45D(STA4,Q,M)

MOSFET N-CH 450V 8A TO220SIS

Toshiba Semiconductor and Storage 		2,745 -

RFQ

TK8A45D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Ta) 10V 900mOhm @ 4A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK8A50DA(STA4,Q,M)

TK8A50DA(STA4,Q,M)

MOSFET N-CH 500V 7.5A TO220SIS

Toshiba Semiconductor and Storage 		2,274 -

RFQ

TK8A50DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 7.5A (Ta) 10V 1.04Ohm @ 3.8A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A65D(STA4,Q,M)

TK5A65D(STA4,Q,M)

MOSFET N-CH 650V 5A TO220SIS

Toshiba Semiconductor and Storage 		2,485 -

RFQ

TK5A65D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK8A45DA(STA4,Q,M)

TK8A45DA(STA4,Q,M)

MOSFET N-CH 450V 7.5A TO220SIS

Toshiba Semiconductor and Storage 		2,453 -

RFQ

TK8A45DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 7.5A (Tc) - - - - - - - - - Through Hole
TK5A60W5,S5VX

TK5A60W5,S5VX

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,942 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 950mOhm @ 2.3A, 10V 4.5V @ 230µA 11.5 nC @ 10 V ±30V 370 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK160F10N1L,LQ

TK160F10N1L,LQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage 		3,547 -

RFQ

TK160F10N1L,LQ

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 2.4mOhm @ 80A, 10V 3.5V @ 1mA 122 nC @ 10 V ±20V 10100 pF @ 10 V - 375W (Tc) 175°C Surface Mount
TK7A65W,S5X

TK7A65W,S5X

MOSFET N-CH 650V 6.8A TO220SIS

Toshiba Semiconductor and Storage 		3,968 -

RFQ

TK7A65W,S5X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Ta) 10V 780mOhm @ 3.4A, 10V 3.5V @ 250µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK8A50D(STA4,Q,M)

TK8A50D(STA4,Q,M)

MOSFET N-CH 500V 8A TO220SIS

Toshiba Semiconductor and Storage 		2,849 -

RFQ

TK8A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 850mOhm @ 4A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK155E65Z,S1X

TK155E65Z,S1X

650V DTMOS VI TO-220 155MOHM

Toshiba Semiconductor and Storage 		196 -

RFQ

TK155E65Z,S1X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Through Hole
TK5Q60W,S1VQ

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage 		3,923 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Through Hole
TK14G65W5,RQ

TK14G65W5,RQ

MOSFET N-CH 650V 13.7A D2PAK

Toshiba Semiconductor and Storage 		2,935 -

RFQ

TK14G65W5,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Surface Mount
TK9A45D(STA4,Q,M)

TK9A45D(STA4,Q,M)

MOSFET N-CH 450V 9A TO220SIS

Toshiba Semiconductor and Storage 		2,131 -

RFQ

TK9A45D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 9A (Ta) 10V 770mOhm @ 4.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK56E12N1,S1X

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage 		2,775 -

RFQ

TK56E12N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) Through Hole
TK6A65W,S5X

TK6A65W,S5X

MOSFET N-CH 650V 5.8A TO220SIS

Toshiba Semiconductor and Storage 		3,526 -

RFQ

TK6A65W,S5X

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK16V60W,LVQ

TK16V60W,LVQ

MOSFET N-CH 600V 15.8A 4DFN

Toshiba Semiconductor and Storage 		2,303 -

RFQ

TK16V60W,LVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 139W (Tc) 150°C (TJ) Surface Mount
TK8A55DA(STA4,Q,M)

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage 		3,052 -

RFQ

TK8A55DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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