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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK7A45DA(STA4,Q,M)

TK7A45DA(STA4,Q,M)

MOSFET N-CH 450V 6.5A TO220SIS

Toshiba Semiconductor and Storage 		3,822 -

RFQ

TK7A45DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 6.5A (Ta) 10V 1.2Ohm @ 3.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
2SK3798(STA4,Q,M)

2SK3798(STA4,Q,M)

POWER MOSFET TRANSISTOR TO-220(S

Toshiba Semiconductor and Storage 		2,745 -

RFQ

2SK3798(STA4,Q,M)

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 1mA 26 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C Through Hole
TK2R4A08QM,S4X

TK2R4A08QM,S4X

UMOS10 TO-220SIS 80V 2.4MOHM

Toshiba Semiconductor and Storage 		137 -

RFQ

TK2R4A08QM,S4X

Ficha técnica

 Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 179 nC @ 10 V ±20V 13000 pF @ 40 V - 47W (Tc) 175°C Through Hole
TPW2R508NH,L1Q

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage 		3,627 -

RFQ

TPW2R508NH,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
TK110U65Z,RQ

TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

Toshiba Semiconductor and Storage 		3,820 -

RFQ

TK110U65Z,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Surface Mount
TK2A65D(STA4,Q,M)

TK2A65D(STA4,Q,M)

MOSFET N-CH 650V 2A TO220SIS

Toshiba Semiconductor and Storage 		3,118 -

RFQ

TK2A65D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Ta) 10V 3.26Ohm @ 1A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK3A65D(STA4,Q,M)

TK3A65D(STA4,Q,M)

MOSFET N-CH 650V 3A TO220SIS

Toshiba Semiconductor and Storage 		3,618 -

RFQ

TK3A65D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Ta) 10V 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TPW3R70APL,L1Q

TPW3R70APL,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage 		2,826 -

RFQ

TPW3R70APL,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 45A, 10V 2.5V @ 1mA 67 nC @ 10 V ±20V 6300 pF @ 50 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TK5A80E,S4X

TK5A80E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,238 -

RFQ

TK5A80E,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Ta) 10V 2.4Ohm @ 2.5A, 10V 4V @ 500µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C Through Hole
TK6A55DA(STA4,Q,M)

TK6A55DA(STA4,Q,M)

MOSFET N-CH 550V 5.5A TO220SIS

Toshiba Semiconductor and Storage 		2,476 -

RFQ

TK6A55DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 5.5A (Ta) 10V 1.48Ohm @ 2.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK6A53D(STA4,Q,M)

TK6A53D(STA4,Q,M)

MOSFET N-CH 525V 6A TO220SIS

Toshiba Semiconductor and Storage 		2,974 -

RFQ

TK6A53D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK7A50D(STA4,Q,M)

TK7A50D(STA4,Q,M)

MOSFET N-CH 500V 7A TO220SIS

Toshiba Semiconductor and Storage 		3,010 -

RFQ

TK7A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A90E,S4X

TK5A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,450 -

RFQ

TK5A90E,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Ta) 10V 3.1Ohm @ 2.3A, 10V 4V @ 450µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C Through Hole
TPW2900ENH,L1Q

TPW2900ENH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage 		3,119 -

RFQ

TPW2900ENH,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 33A (Tc) 10V 29mOhm @ 16.5A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
TPW5200FNH,L1Q

TPW5200FNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage 		3,962 -

RFQ

TPW5200FNH,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 250 V 26A (Tc) 10V 52mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
TPW1500CNH,L1Q

TPW1500CNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage 		2,450 -

RFQ

TPW1500CNH,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Tc) 10V 15.4mOhm @ 19A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 75 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
TK20G60W,RVQ

TK20G60W,RVQ

MOSFET N CH 600V 20A D2PAK

Toshiba Semiconductor and Storage 		2,989 -

RFQ

TK20G60W,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V Super Junction 165W (Tc) 150°C (TJ) Surface Mount
TK3A65DA(STA4,QM)

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage 		2,257 -

RFQ

TK3A65DA(STA4,QM)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK560A60Y,S4X

TK560A60Y,S4X

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage 		3,719 -

RFQ

TK560A60Y,S4X

Ficha técnica

 Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) Through Hole
TK090U65Z,RQ

TK090U65Z,RQ

DTMOS VI TOLL PD=230W F=1MHZ

Toshiba Semiconductor and Storage 		3,983 -

RFQ

TK090U65Z,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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