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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK46E08N1,S1X

TK46E08N1,S1X

MOSFET N-CH 80V 80A TO220

Toshiba Semiconductor and Storage 		3,054 -

RFQ

TK46E08N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 103W (Tc) 150°C (TJ) Through Hole
TK8R2E06PL,S1X

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,976 -

RFQ

TK8R2E06PL,S1X

Ficha técnica

 Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C Through Hole
TJ90S04M3L,LQ

TJ90S04M3L,LQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage 		2,693 -

RFQ

TJ90S04M3L,LQ

Ficha técnica

 Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) 4.5V, 10V 4.3mOhm @ 45A, 10V 2V @ 1mA 172 nC @ 10 V +10V, -20V 7700 pF @ 10 V - 180W (Tc) 175°C Surface Mount
TK12P60W,RVQ

TK12P60W,RVQ

MOSFET N CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage 		2,210 -

RFQ

TK12P60W,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Surface Mount
TK5Q65W,S1Q

TK5Q65W,S1Q

MOSFET N-CH 650V 5.2A IPAK

Toshiba Semiconductor and Storage 		2,867 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
TK3A60DA(STA4,Q,M)

TK3A60DA(STA4,Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage 		2,558 -

RFQ

TK3A60DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK12V60W,LVQ

TK12V60W,LVQ

MOSFET N-CH 600V 11.5A 4DFN

Toshiba Semiconductor and Storage 		3,873 -

RFQ

TK12V60W,LVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 104W (Tc) 150°C (TJ) Surface Mount
TK8P60W,RVQ

TK8P60W,RVQ

MOSFET N CH 600V 8A DPAK

Toshiba Semiconductor and Storage 		3,058 -

RFQ

TK8P60W,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 80W (Tc) 150°C (TJ) Surface Mount
TK42E12N1,S1X

TK42E12N1,S1X

MOSFET N CH 120V 88A TO-220

Toshiba Semiconductor and Storage 		2,567 -

RFQ

TK42E12N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 88A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 140W (Tc) 150°C (TJ) Through Hole
TK5A50D(STA4,Q,M)

TK5A50D(STA4,Q,M)

MOSFET N-CH 500V 5A TO220SIS

Toshiba Semiconductor and Storage 		3,298 -

RFQ

TK5A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK6A45DA(STA4,Q,M)

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage 		3,710 -

RFQ

TK6A45DA(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) Through Hole
TK6Q65W,S1Q

TK6Q65W,S1Q

MOSFET N-CH 650V 5.8A IPAK

Toshiba Semiconductor and Storage 		2,350 -

RFQ

TK6Q65W,S1Q

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
TK4A80E,S4X

TK4A80E,S4X

PB-FPOWERMOSFETTRANSISTORTO-220S

Toshiba Semiconductor and Storage 		3,458 -

RFQ

TK4A80E,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 400µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C Through Hole
TK3A90E,S4X

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,956 -

RFQ

TK3A90E,S4X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C Through Hole
TK190U65Z,RQ

TK190U65Z,RQ

DTMOS VI TOLL PD=130W F=1MHZ

Toshiba Semiconductor and Storage 		3,313 -

RFQ

TK190U65Z,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Surface Mount
TK3R1E04PL,S1X

TK3R1E04PL,S1X

MOSFET N-CH 40V 100A TO220

Toshiba Semiconductor and Storage 		2,914 -

RFQ

TK3R1E04PL,S1X

Ficha técnica

 Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 87W (Tc) 175°C (TJ) Through Hole
TK155U65Z,RQ

TK155U65Z,RQ

DTMOS VI TOLL PD=150W F=1MHZ

Toshiba Semiconductor and Storage 		3,970 -

RFQ

TK155U65Z,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Surface Mount
TK5A53D(STA4,Q,M)

TK5A53D(STA4,Q,M)

MOSFET N-CH 525V 5A TO220SIS

Toshiba Semiconductor and Storage 		2,435 -

RFQ

TK5A53D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK6A50D(STA4,Q,M)

TK6A50D(STA4,Q,M)

MOSFET N-CH 500V 6A TO220SIS

Toshiba Semiconductor and Storage 		3,772 -

RFQ

TK6A50D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.4Ohm @ 3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A55D(STA4,Q,M)

TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO220SIS

Toshiba Semiconductor and Storage 		3,894 -

RFQ

TK5A55D(STA4,Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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