Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPH1110ENH,L1Q

TPH1110ENH,L1Q

MOSFET N-CH 200V 7.2A 8SOP

Toshiba Semiconductor and Storage
3,451 -

RFQ

TPH1110ENH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 7.2A (Ta) 10V 114mOhm @ 3.6A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 100 V - 1.6W (Ta), 42W (Tc) 150°C (TJ) Surface Mount
TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ

MOSFET P-CH 60V 30A DPAK

Toshiba Semiconductor and Storage
3,694 -

RFQ

TJ30S06M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 6V, 10V 21.8mOhm @ 15A, 10V 3V @ 1mA 80 nC @ 10 V +10V, -20V 3950 pF @ 10 V - 68W (Tc) 175°C (TJ) Surface Mount
TK60S06K3L(T6L1,NQ

TK60S06K3L(T6L1,NQ

MOSFET N-CH 60V 60A DPAK

Toshiba Semiconductor and Storage
2,479 -

RFQ

TK60S06K3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Ta) 6V, 10V 8mOhm @ 30A, 10V 3V @ 1mA 60 nC @ 10 V ±20V 2900 pF @ 10 V - 88W (Tc) 175°C (TJ) Surface Mount
TK4A50D(STA4,Q,M)

TK4A50D(STA4,Q,M)

MOSFET N-CH 500V 4A TO220SIS

Toshiba Semiconductor and Storage
3,284 -

RFQ

TK4A50D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK10P50W,RQ

TK10P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,551 -

RFQ

TK10P50W,RQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C Surface Mount
TK8A25DA,S4X

TK8A25DA,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,998 -

RFQ

TK8A25DA,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 7.5A (Ta) 10V 500mOhm @ 3.8A, 10V 3.5V @ 1mA 16 nC @ 10 V ±20V 550 pF @ 100 V - 30W (Tc) 150°C Through Hole
TK33S10N1L,LQ

TK33S10N1L,LQ

MOSFET N-CH 100V 33A DPAK

Toshiba Semiconductor and Storage
2,213 -

RFQ

TK33S10N1L,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C Surface Mount
TK9P65W,RQ

TK9P65W,RQ

MOSFET N-CH 650V 9.3A DPAK

Toshiba Semiconductor and Storage
3,738 -

RFQ

TK9P65W,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 560mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Surface Mount
TJ50S06M3L(T6L1,NQ

TJ50S06M3L(T6L1,NQ

MOSFET P-CH 60V 50A DPAK

Toshiba Semiconductor and Storage
2,474 -

RFQ

TJ50S06M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 6V, 10V 13.8mOhm @ 25A, 10V 3V @ 1mA 124 nC @ 10 V +10V, -20V 6290 pF @ 10 V - 90W (Tc) 175°C (TJ) Surface Mount
TK8P65W,RQ

TK8P65W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
2,988 -

RFQ

TK8P65W,RQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C Surface Mount
SSM10N954L,EFF

SSM10N954L,EFF

COMMON-DRAIN NCH MOSFET, 12V, 13

Toshiba Semiconductor and Storage
10,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 12 V 13.5A (Ta) 2.5V, 4.5V 2.75mOhm @ 6A, 4.5V 1.4V @ 1.11mA 25 nC @ 4 V ±8V - - 800mW (Ta) 150°C Surface Mount
TK11P65W,RQ

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK

Toshiba Semiconductor and Storage
2,652 -

RFQ

TK11P65W,RQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 440mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) Surface Mount
TK6P60W,RVQ

TK6P60W,RVQ

MOSFET N CH 600V 6.2A DPAK

Toshiba Semiconductor and Storage
2,757 -

RFQ

TK6P60W,RVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
TK12P50W,RQ

TK12P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,357 -

RFQ

TK12P50W,RQ

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C Surface Mount
TK35E08N1,S1X

TK35E08N1,S1X

MOSFET N-CH 80V 55A TO220

Toshiba Semiconductor and Storage
3,573 -

RFQ

TK35E08N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 72W (Tc) 150°C (TJ) Through Hole
TK7P60W,RVQ

TK7P60W,RVQ

MOSFET N CH 600V 7A DPAK

Toshiba Semiconductor and Storage
3,481 -

RFQ

TK7P60W,RVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
TK46A08N1,S4X

TK46A08N1,S4X

MOSFET N-CH 80V 46A TO220SIS

Toshiba Semiconductor and Storage
3,375 -

RFQ

TK46A08N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A45DA(STA4,Q,M)

TK5A45DA(STA4,Q,M)

MOSFET N-CH 450V 4.5A TO220SIS

Toshiba Semiconductor and Storage
3,224 -

RFQ

TK5A45DA(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Ta) 10V 1.75Ohm @ 2.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TPH4R606NH,L1Q

TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Toshiba Semiconductor and Storage
2,079 -

RFQ

TPH4R606NH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 6.5V, 10V 4.6mOhm @ 16A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3965 pF @ 30 V - 1.6W (Ta), 63W (Tc) 150°C (TJ) Surface Mount
TJ60S06M3L(T6L1,NQ

TJ60S06M3L(T6L1,NQ

MOSFET P-CH 60V 60A DPAK

Toshiba Semiconductor and Storage
2,108 -

RFQ

TJ60S06M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Ta) 6V, 10V 11.2mOhm @ 30A, 10V 3V @ 1mA 156 nC @ 10 V +10V, -20V 7760 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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