Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK1P90A,LQ(CO

TK1P90A,LQ(CO

MOSFET N-CH 900V 1A PW-MOLD

Toshiba Semiconductor and Storage
3,881 -

RFQ

TK1P90A,LQ(CO

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 1A (Ta) 10V 9Ohm @ 500mA, 10V 4V @ 1mA 13 nC @ 10 V ±30V 320 pF @ 25 V - 20W (Tc) 150°C Surface Mount
TK2P60D(TE16L1,NV)

TK2P60D(TE16L1,NV)

MOSFET N-CH 600V 2A PW-MOLD

Toshiba Semiconductor and Storage
2,115 -

RFQ

TK2P60D(TE16L1,NV)

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C Surface Mount
TK5P60W5,RVQ

TK5P60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
2,983 -

RFQ

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 990mOhm @ 2.3A, 10V 4.5V @ 230µA 11.5 nC @ 10 V ±30V 370 pF @ 300 V - 60W (Tc) 150°C Surface Mount
TJ60S04M3L(T6L1,NQ

TJ60S04M3L(T6L1,NQ

MOSFET P-CH 40V 60A DPAK

Toshiba Semiconductor and Storage
2,406 -

RFQ

TJ60S04M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 60A (Ta) 6V, 10V 6.3mOhm @ 30A, 10V 3V @ 1mA 125 nC @ 10 V +10V, -20V 6510 pF @ 10 V - 90W (Tc) 175°C (TJ) Surface Mount
TK5P65W,RQ

TK5P65W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,047 -

RFQ

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C Surface Mount
TK35S04K3L(T6L1,NQ

TK35S04K3L(T6L1,NQ

MOSFET N-CH 40V 35A DPAK

Toshiba Semiconductor and Storage
3,449 -

RFQ

TK35S04K3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta) 6V, 10V 10.3mOhm @ 17.5A, 10V 3V @ 1mA 28 nC @ 10 V ±20V 1370 pF @ 10 V - 58W (Tc) 175°C (TJ) Surface Mount
TK5P50D(T6RSS-Q)

TK5P50D(T6RSS-Q)

MOSFET N-CH 500V 5A DPAK

Toshiba Semiconductor and Storage
2,682 -

RFQ

TK5P50D(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
TPH12008NH,L1Q

TPH12008NH,L1Q

MOSFET N-CH 80V 24A 8SOP

Toshiba Semiconductor and Storage
2,224 -

RFQ

TPH12008NH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Tc) 10V 12.3mOhm @ 12A, 10V 4V @ 300µA 22 nC @ 10 V ±20V 1900 pF @ 40 V - 1.6W (Ta), 48W (Tc) 150°C (TJ) Surface Mount
SSM3J145TU,LXHF

SSM3J145TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage
3,029 -

RFQ

SSM3J145TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4.5V 103mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 270 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3K62TU,LXHF

SSM3K62TU,LXHF

SMOS LOW RON NCH VDSS:20V ID:0.8

Toshiba Semiconductor and Storage
5,414 -

RFQ

SSM3K62TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 57mOhm @ 800mA, 4.5V 1V @ 1mA 2 nC @ 4.5 V ±8V 177 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
TK5P53D(T6RSS-Q)

TK5P53D(T6RSS-Q)

MOSFET N-CH 525V 5A DPAK

Toshiba Semiconductor and Storage
2,389 -

RFQ

TK5P53D(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) Surface Mount
SSM3J144TU,LXHF

SSM3J144TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage
5,495 -

RFQ

SSM3J144TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V +6V, -8V 290 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3J143TU,LF

SSM3J143TU,LF

MOSFET P-CH 20V 5.5A UFM

Toshiba Semiconductor and Storage
4,152 -

RFQ

SSM3J143TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM6K516NU,LF

SSM6K516NU,LF

MOSFET N-CH 30V 6A 6UDFNB

Toshiba Semiconductor and Storage
5,855 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 46mOhm @ 4A, 10V 2.5V @ 100µA 2.5 nC @ 4.5 V +20V, -12V 280 pF @ 15 V - 1.25W (Ta) 150°C Surface Mount
TPH4R008QM,LQ

TPH4R008QM,LQ

POWER MOSFET TRANSISTOR SOP8-ADV

Toshiba Semiconductor and Storage
2,202 -

RFQ

TPH4R008QM,LQ

Ficha técnica

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 80 V 86A (Tc) 6V, 10V 4mOhm @ 43A, 10V 3.5V @ 600µA 57 nC @ 10 V ±20V 5300 pF @ 40 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
SSM3J143TU,LXHF

SSM3J143TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage
4,265 -

RFQ

SSM3J143TU,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
TK6P53D(T6RSS-Q)

TK6P53D(T6RSS-Q)

MOSFET N-CH 525V 6A DPAK

Toshiba Semiconductor and Storage
2,506 -

RFQ

TK6P53D(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
TK7P50D(T6RSS-Q)

TK7P50D(T6RSS-Q)

MOSFET N-CH 500V 7A DPAK

Toshiba Semiconductor and Storage
3,312 -

RFQ

TK7P50D(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
TK2Q60D(Q)

TK2Q60D(Q)

MOSFET N-CH 600V 2A PW-MOLD2

Toshiba Semiconductor and Storage
2,561 -

RFQ

TK2Q60D(Q)

Ficha técnica

Bulk π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
TJ40S04M3L(T6L1,NQ

TJ40S04M3L(T6L1,NQ

MOSFET P-CH 40V 40A DPAK

Toshiba Semiconductor and Storage
2,402 -

RFQ

TJ40S04M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 6V, 10V 9.1mOhm @ 20A, 10V 3V @ 1mA 83 nC @ 10 V +10V, -20V 4140 pF @ 10 V - 68W (Tc) 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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