Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPH2R805PL,LQ

TPH2R805PL,LQ

PB-F POWER MOSFET TRANSISTOR SOP

Toshiba Semiconductor and Storage
3,120 -

RFQ

TPH2R805PL,LQ

Ficha técnica

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 100A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V 2.4V @ 500µA 73 nC @ 10 V ±20V 5175 pF @ 22.5 V - 830mW (Ta), 116W (Tc) 175°C Surface Mount
SSM5H08TU,LF

SSM5H08TU,LF

MOSFET N-CH 20V 1.5A UFV

Toshiba Semiconductor and Storage
5,971 -

RFQ

SSM5H08TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4V 160mOhm @ 750mA, 4V 1.1V @ 100µA - ±12V 125 pF @ 10 V Schottky Diode (Isolated) 500mW (Ta) 150°C Surface Mount
TJ80S04M3L(T6L1,NQ

TJ80S04M3L(T6L1,NQ

MOSFET P-CH 40V 80A DPAK

Toshiba Semiconductor and Storage
2,592 -

RFQ

TJ80S04M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 5.2mOhm @ 40A, 10V 3V @ 1mA 158 nC @ 10 V +10V, -20V 7770 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ)

MOSFET P-CH 60V 8A DPAK

Toshiba Semiconductor and Storage
2,986 -

RFQ

TJ8S06M3L(T6L1,NQ)

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 6V, 10V 104mOhm @ 4A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 890 pF @ 10 V - 27W (Tc) 175°C (TJ) Surface Mount
TK8S06K3L(T6L1,NQ)

TK8S06K3L(T6L1,NQ)

MOSFET N-CH 60V 8A DPAK

Toshiba Semiconductor and Storage
3,154 -

RFQ

TK8S06K3L(T6L1,NQ)

Ficha técnica

Tape & Reel (TR) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 6V, 10V 54mOhm @ 4A, 10V 3V @ 1mA 10 nC @ 10 V ±20V 400 pF @ 10 V - 25W (Tc) 175°C (TJ) Surface Mount
TPH3R506PL,LQ

TPH3R506PL,LQ

MOSFET N-CH 60V 94A 8SOP

Toshiba Semiconductor and Storage
2,589 -

RFQ

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 94A (Tc) 4.5V, 10V 3.5mOhm @ 47A, 10V 2.5V @ 500µA 55 nC @ 10 V ±20V 4420 pF @ 30 V - 830mW (Ta), 116W (Tc) 175°C Surface Mount
TK17V65W,LQ

TK17V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
7,475 -

RFQ

TK17V65W,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 210mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C Surface Mount
TK3P50D,RQ(S

TK3P50D,RQ(S

MOSFET N-CH 500V 3A DPAK

Toshiba Semiconductor and Storage
3,900 -

RFQ

TK3P50D,RQ(S

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Ta) 10V 3Ohm @ 1.5A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) Surface Mount
TK28V65W,LQ

TK28V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
4,960 -

RFQ

TK28V65W,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 120mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C Surface Mount
TK28V65W5,LQ

TK28V65W5,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
4,980 -

RFQ

TK28V65W5,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 140mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C Surface Mount
TK22A65X,S5X

TK22A65X,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
188 -

RFQ

TK22A65X,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 150mOhm @ 11A, 10V 3.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK3P80E,RQ

TK3P80E,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,224 -

RFQ

TK3P80E,RQ

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 4.9Ohm @ 1.5A, 10V 4V @ 300µA 12 nC @ 10 V ±30V 500 pF @ 25 V - 80W (Tc) 150°C Surface Mount
TPC8133,LQ(S

TPC8133,LQ(S

MOSFET P-CH 40V 9A 8SOP

Toshiba Semiconductor and Storage
3,563 -

RFQ

TPC8133,LQ(S

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 15mOhm @ 4.5A, 10V 2V @ 500µA 64 nC @ 10 V +20V, -25V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TK22A65X5,S5X

TK22A65X5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
178 -

RFQ

TK22A65X5,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 160mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C Through Hole
TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage
2,501 -

RFQ

TJ10S04M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C (TJ) Surface Mount
TJ15S06M3L(T6L1,NQ

TJ15S06M3L(T6L1,NQ

MOSFET P-CH 60V 15A DPAK

Toshiba Semiconductor and Storage
3,931 -

RFQ

TJ15S06M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 6V, 10V 50mOhm @ 7.5A, 10V 3V @ 1mA 36 nC @ 10 V +10V, -20V 1770 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

MOSFET P-CH 40V 20A DPAK

Toshiba Semiconductor and Storage
2,151 -

RFQ

TJ20S04M3L(T6L1,NQ

Ficha técnica

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V 3V @ 1mA 37 nC @ 10 V +10V, -20V 1850 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
TK2P90E,RQ

TK2P90E,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,484 -

RFQ

TK2P90E,RQ

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 2A (Ta) 10V 5.9Ohm @ 1A, 10V 4V @ 200µA 12 nC @ 10 V ±30V 500 pF @ 25 V - 80W (Tc) 150°C Surface Mount
TPH5R60APL,L1Q

TPH5R60APL,L1Q

PB-F POWER MOSFET TRANSISTOR N-C

Toshiba Semiconductor and Storage
2,674 -

RFQ

TPH5R60APL,L1Q

Ficha técnica

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 5.6mOhm @ 30A, 10V 2.5V @ 500µA 52 nC @ 10 V ±20V 4300 pF @ 50 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
TK12P60W,RVQ(S

TK12P60W,RVQ(S

MOSFET N-CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage
2,430 -

RFQ

TK12P60W,RVQ(S

Ficha técnica

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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