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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPH4R803PL,LQ

TPH4R803PL,LQ

MOSFET N-CH 30V 48A 8SOP

Toshiba Semiconductor and Storage 		3,000 -

RFQ

TPH4R803PL,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 4.5V, 10V 4.8mOhm @ 24A, 10V 2.1V @ 200µA 22 nC @ 10 V ±20V 1975 pF @ 15 V - 830mW (Ta), 69W (Tc) 175°C Surface Mount
TK8P60W5,RVQ

TK8P60W5,RVQ

MOSFET N-CH 600V 8A DPAK

Toshiba Semiconductor and Storage 		15,998 -

RFQ

TK8P60W5,RVQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 560mOhm @ 4A, 10V 4.5V @ 400µA 22 nC @ 10 V ±30V 590 pF @ 300 V - 80W (Tc) 150°C (TJ) Surface Mount
TK380P65Y,RQ

TK380P65Y,RQ

MOSFET N-CHANNEL 650V 9.7A DPAK

Toshiba Semiconductor and Storage 		2,868 -

RFQ

TK380P65Y,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 80W (Tc) 150°C (TJ) Surface Mount
TK4P60D,RQ

TK4P60D,RQ

PB-F POWER MOSFET TRANSISTOR DP(

Toshiba Semiconductor and Storage 		3,932 -

RFQ

TK4P60D,RQ

Ficha técnica

 Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C Surface Mount
TPH2R903PL,L1Q

TPH2R903PL,L1Q

PB-FPOWERMOSFETTRANSISTORSOP8-AD

Toshiba Semiconductor and Storage 		3,711 -

RFQ

TPH2R903PL,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 960mW (Ta), 81W (Tc) 175°C Surface Mount
TPHR9003NL,L1Q

TPHR9003NL,L1Q

MOSFET N-CH 30V 60A 8SOP

Toshiba Semiconductor and Storage 		9,900 -

RFQ

TPHR9003NL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK42A12N1,S4X

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage 		1,082 -

RFQ

TK42A12N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) Through Hole
TPN6R003NL,LQ

TPN6R003NL,LQ

MOSFET N CH 30V 27A 8TSON-ADV

Toshiba Semiconductor and Storage 		3,508 -

RFQ

TPN6R003NL,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6mOhm @ 13.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 32W (Tc) 150°C (TJ) Surface Mount
TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage 		1,999 -

RFQ

TK200F04N1L,LXGQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C Surface Mount
TPH6R003NL,LQ

TPH6R003NL,LQ

MOSFET N CH 30V 38A 8SOP

Toshiba Semiconductor and Storage 		3,719 -

RFQ

TPH6R003NL,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 6mOhm @ 19A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1400 pF @ 15 V - 1.6W (Ta), 34W (Tc) 150°C (TJ) Surface Mount
TK25S06N1L,LQ

TK25S06N1L,LQ

MOSFET N-CH 60V 25A DPAK

Toshiba Semiconductor and Storage 		2,399 -

RFQ

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta) 4.5V, 10V 18.5mOhm @ 12.5A, 10V 2.5V @ 100µA 15 nC @ 10 V ±20V 855 pF @ 10 V - 57W (Tc) 175°C Surface Mount
TK13P25D,RQ

TK13P25D,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage 		3,469 -

RFQ

TK13P25D,RQ

Ficha técnica

 Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Ta) 10V 250mOhm @ 6.5A, 10V 3.5V @ 1mA 25 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) 150°C Surface Mount
TPN4R303NL,L1Q

TPN4R303NL,L1Q

MOSFET N-CH 30V 40A 8TSON

Toshiba Semiconductor and Storage 		2,817 -

RFQ

TPN4R303NL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.3mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 34W (Tc) 150°C (TJ) Surface Mount
TK20E60W5,S1VX

TK20E60W5,S1VX

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage 		472 -

RFQ

TK20E60W5,S1VX

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C Through Hole
TPCP8011,LF

TPCP8011,LF

PB-F POWER MOSFET TRANSISTOR PS-

Toshiba Semiconductor and Storage 		3,195 -

RFQ

TPCP8011,LF

Ficha técnica

 Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 5A (Ta) 6V, 10V 51.2mOhm @ 2.5A, 10V 3V @ 1mA 11.8 nC @ 10 V ±20V 505 pF @ 10 V - 940mW (Ta) 175°C Surface Mount
TPN4R203NC,L1Q

TPN4R203NC,L1Q

MOSFET N CH 30V 23A 8TSON-ADV

Toshiba Semiconductor and Storage 		3,377 -

RFQ

TPN4R203NC,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 4.2mOhm @ 11.5A, 10V 2.3V @ 200µA 24 nC @ 10 V ±20V 1370 pF @ 15 V - 700mW (Ta), 22W (Tc) 150°C (TJ) Surface Mount
TPH6R30ANL,L1Q

TPH6R30ANL,L1Q

MOSFET N-CH 100V 66A/45A 8SOP

Toshiba Semiconductor and Storage 		3,562 -

RFQ

TPH6R30ANL,L1Q

Ficha técnica

 Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Ta), 45A (Tc) 4.5V, 10V 6.3mOhm @ 22.5A, 10V 2.5V @ 500µA 55 nC @ 10 V ±20V 4300 pF @ 50 V - 2.5W (Ta), 54W (Tc) 150°C Surface Mount
TK39N60W5,S1VF

TK39N60W5,S1VF

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage 		3,615 -

RFQ

TK39N60W5,S1VF

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 74mOhm @ 19.4A, 10V 4.5V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) Through Hole
TK040N65Z,S1F

TK040N65Z,S1F

MOSFET N-CH 650V 57A TO247

Toshiba Semiconductor and Storage 		133 -

RFQ

TK040N65Z,S1F

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C Through Hole
TK49N65W,S1F

TK49N65W,S1F

PB-F POWER MOSFET TRANSISTOR TO2

Toshiba Semiconductor and Storage 		113 -

RFQ

TK49N65W,S1F

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 55mOhm @ 24.6A, 10V 3.5V @ 2.5mA 160 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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