Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK40S06N1L,LQ

TK40S06N1L,LQ

MOSFET N-CH 60V 40A DPAK

Toshiba Semiconductor and Storage
3,038 -

RFQ

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4.5V, 10V 10.5mOhm @ 20A, 10V 2.5V @ 200µA 26 nC @ 10 V ±20V 1650 pF @ 10 V - 88.2W (Tc) 175°C Surface Mount
TK11S10N1L,LQ

TK11S10N1L,LQ

MOSFET N-CH 100V 11A DPAK

Toshiba Semiconductor and Storage
2,799 -

RFQ

TK11S10N1L,LQ

Ficha técnica

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) 4.5V, 10V 28mOhm @ 5.5A, 10V 2.5V @ 100µA 15 nC @ 10 V ±20V 850 pF @ 10 V - 65W (Tc) 175°C Surface Mount
TW070J120B,S1Q

TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

Toshiba Semiconductor and Storage
125 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 90mOhm @ 18A, 20V 5.8V @ 20mA 67 nC @ 20 V ±25V, -10V 1680 pF @ 800 V Standard 272W (Tc) -55°C ~ 175°C Through Hole
SSM3K15ACT,L3F

SSM3K15ACT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
10,779 -

RFQ

SSM3K15ACT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J65CTC,L3F

SSM3J65CTC,L3F

MOSFET P-CH 20V 700MA CST3C

Toshiba Semiconductor and Storage
20,000 -

RFQ

SSM3J65CTC,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 700mA (Ta) 1.2V, 4.5V 500mOhm @ 500mA, 4.5V 1V @ 1mA - ±10V 48 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM6J424TU,LF

SSM6J424TU,LF

MOSFET P-CH 20V 6A UF6

Toshiba Semiconductor and Storage
5,519 -

RFQ

SSM6J424TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 22.5mOhm @ 6A, 4.5V 1V @ 1mA 23.1 nC @ 4.5 V +6V, -8V 1650 pF @ 10 V - 1W (Ta) 150°C Surface Mount
TPN2R805PL,L1Q

TPN2R805PL,L1Q

MOSFET N-CH 45V 139A/80A 8TSON

Toshiba Semiconductor and Storage
2,764 -

RFQ

TPN2R805PL,L1Q

Ficha técnica

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 139A (Ta), 80A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2.4V @ 300µA 39 nC @ 10 V ±20V 3200 pF @ 22.5 V - 2.67W (Ta), 104W (Tc) 175°C Surface Mount
SSM3K35MFV,L3F

SSM3K35MFV,L3F

MOSFET N-CH 20V 180MA VESM

Toshiba Semiconductor and Storage
3,704 -

RFQ

SSM3K35MFV,L3F

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V 1V @ 1mA - ±10V 9.5 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
TPCC8093,L1Q

TPCC8093,L1Q

MOSFET N-CH 20V 21A 8TSON

Toshiba Semiconductor and Storage
2,045 -

RFQ

TPCC8093,L1Q

Ficha técnica

Tape & Reel (TR) U-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 20 V 21A (Ta) 2.5V, 4.5V 5.8mOhm @ 10.5A, 4.5V 1.2V @ 500µA 16 nC @ 5 V ±12V 1860 pF @ 10 V - 1.9W (Ta), 30W (Tc) 150°C Surface Mount
TPCP8J01(TE85L,F,M

TPCP8J01(TE85L,F,M

MOSFET P-CH 32V 5.5A PS-8

Toshiba Semiconductor and Storage
3,114 -

RFQ

TPCP8J01(TE85L,F,M

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 32 V 5.5A (Ta) 4V, 10V 35mOhm @ 3A, 10V 2V @ 1mA 34 nC @ 10 V ±20V 1760 pF @ 10 V - 2.14W (Ta) 150°C (TJ) Surface Mount
SSM5H16TU,LF

SSM5H16TU,LF

MOSFET N-CH 30V 1.9A UFV

Toshiba Semiconductor and Storage
5,400 -

RFQ

SSM5H16TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V Schottky Diode (Isolated) 500mW (Ta) 150°C Surface Mount
SSM6K404TU,LF

SSM6K404TU,LF

MOSFET N-CH 20V 3A UF6

Toshiba Semiconductor and Storage
5,837 -

RFQ

SSM6K404TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4V 55mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3K131TU,LF

SSM3K131TU,LF

MOSFET N-CH 30V 6A UFM

Toshiba Semiconductor and Storage
10,495 -

RFQ

SSM3K131TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 27.6mOhm @ 4A, 10V 2.5V @ 1mA 10.1 nC @ 10 V ±20V 450 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM6K406TU,LF

SSM6K406TU,LF

MOSFET N-CH 30V 4.4A UF6

Toshiba Semiconductor and Storage
3,000 -

RFQ

SSM6K406TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 4.5V, 10V 25mOhm @ 2A, 10V 2.5V @ 1mA 12.4 nC @ 10 V ±20V 490 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
2SK2009TE85LF

2SK2009TE85LF

MOSFET N-CH 30V 200MA SC59-3

Toshiba Semiconductor and Storage
5,896 -

RFQ

2SK2009TE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 2.5V 2Ohm @ 50MA, 2.5V 1.5V @ 100µA - ±20V 70 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM5G10TU(TE85L,F)

SSM5G10TU(TE85L,F)

MOSFET P-CH 20V 1.5A UFV

Toshiba Semiconductor and Storage
2,927 -

RFQ

SSM5G10TU(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.8V, 4V 213mOhm @ 1A, 4V 1V @ 1mA 6.4 nC @ 4 V ±8V 250 pF @ 10 V Schottky Diode (Isolated) 500mW (Ta) 150°C (TJ) Surface Mount
TPN14006NH,L1Q

TPN14006NH,L1Q

MOSFET N CH 60V 13A 8TSON-ADV

Toshiba Semiconductor and Storage
3,223 -

RFQ

TPN14006NH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta) 6.5V, 10V 14mOhm @ 6.5A, 10V 4V @ 200µA 15 nC @ 10 V ±20V 1300 pF @ 30 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TJ15P04M3,RQ(S

TJ15P04M3,RQ(S

MOSFET P-CH 40V 15A DPAK

Toshiba Semiconductor and Storage
3,640 -

RFQ

TJ15P04M3,RQ(S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 15A (Ta) 4.5V, 10V 36mOhm @ 7.5A, 10V 2V @ 100µA 26 nC @ 10 V ±20V 1100 pF @ 10 V - 29W (Tc) 150°C (TJ) Surface Mount
TPN6R303NC,LQ

TPN6R303NC,LQ

MOSFET N CH 30V 20A 8TSON-ADV

Toshiba Semiconductor and Storage
2,185 -

RFQ

TPN6R303NC,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 6.3mOhm @ 10A, 10V 2.3V @ 200µA 24 nC @ 10 V ±20V 1370 pF @ 15 V - 700mW (Ta), 19W (Tc) 150°C (TJ) Surface Mount
TPH3R003PL,LQ

TPH3R003PL,LQ

MOSFET N-CH 30V 88A 8SOP

Toshiba Semiconductor and Storage
2,356 -

RFQ

TPH3R003PL,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 88A (Tc) 4.5V, 10V 4.2mOhm @ 44A, 4.5V 2.1V @ 300µA 50 nC @ 10 V ±20V 3825 pF @ 15 V - 90W (Tc) 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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