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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPH9R506PL,LQMOSFET N-CH 60V 34A 8SOP Toshiba Semiconductor and Storage |
9,279 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 34A (Tc) | 4.5V, 10V | 9.5mOhm @ 17A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1910 pF @ 30 V | - | 830mW (Ta), 81W (Tc) | 175°C | Surface Mount |
|
2SJ168TE85LFMOSFET P-CH 60V 200MA SC59 Toshiba Semiconductor and Storage |
17,707 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 2Ohm @ 50mA, 10V | - | - | ±20V | 85 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM6K809R,LFSMALL SIGNAL MOSFET N-CH VDSS=60 Toshiba Semiconductor and Storage |
2,013 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.5W (Ta) | 175°C | Surface Mount |
|
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2SJ668(TE16L1,NQ)MOSFET P-CHANNEL 60V 5A PW-MOLD Toshiba Semiconductor and Storage |
2,276 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSIII | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | - | 20W (Tc) | 150°C | Surface Mount |
|
TPN11006NL,LQMOSFET N-CH 60V 17A 8TSON Toshiba Semiconductor and Storage |
3,309 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount |
|
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TPN3300ANH,LQMOSFET N-CH 100V 9.4A 8TSON Toshiba Semiconductor and Storage |
20,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 33mOhm @ 4.7A, 10V | 4V @ 100µA | 11 nC @ 10 V | ±20V | 880 pF @ 50 V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount |
|
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TPH2R003PL,LQMOSFET N-CH 30V 100A 8SOP Toshiba Semiconductor and Storage |
9,782 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2.1V @ 500µA | 86 nC @ 10 V | ±20V | 6410 pF @ 15 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount |
|
|
TPH5900CNH,L1QMOSFET N-CH 150V 9A 8SOP Toshiba Semiconductor and Storage |
9,796 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount |
|
TK380P60Y,RQMOSFET N-CHANNEL 600V 9.7A DPAK Toshiba Semiconductor and Storage |
7,922 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK5P60W,RVQMOSFET N CH 600V 5.4A DPAK Toshiba Semiconductor and Storage |
11,302 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | |
|
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TPH1R306P1,L1QMOSFET N-CH 60V 100A 8SOP Toshiba Semiconductor and Storage |
4,411 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 1.28mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
|
|
TK10P60W,RVQMOSFET N CH 600V 9.7A DPAK Toshiba Semiconductor and Storage |
11,087 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount |
|
TPC8134,LQ(SMOSFET P-CH 40V 5A 8SOP Toshiba Semiconductor and Storage |
2,719 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Ta) | 4.5V, 10V | 52mOhm @ 2.5A, 10V | 2V @ 100µA | 20 nC @ 10 V | +20V, -25V | 890 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
|
TPC8125,LQ(SMOSFET P-CH 30V 10A 8SOP Toshiba Semiconductor and Storage |
3,761 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 13mOhm @ 5A, 10V | 2V @ 500µA | 64 nC @ 10 V | +20V, -25V | 2580 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
TK099V65Z,LQMOSFET N-CH 650V 30A 5DFN Toshiba Semiconductor and Storage |
3,750 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 99mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | 150°C | Surface Mount |
|
|
TP89R103NL,LQMOSFET N CH 30V 15A 8SOP Toshiba Semiconductor and Storage |
2,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | 150°C (TJ) | Surface Mount |
|
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TPCC8105,L1QPB-F POWER MOSFET TRANSISTOR TSO Toshiba Semiconductor and Storage |
3,956 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C | Surface Mount |
|
|
TPH6R004PL,LQMOSFET N-CH 40V 87A/49A 8SOP Toshiba Semiconductor and Storage |
2,003 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 87A (Ta), 49A (Tc) | 4.5V, 10V | 6mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30 nC @ 10 V | ±20V | 2700 pF @ 20 V | - | 1.8W (Ta), 81W (Tc) | 175°C | Surface Mount |
|
TK065U65Z,RQDTMOS VI TOLL PD=270W F=1MHZ Toshiba Semiconductor and Storage |
5,393 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | Surface Mount |
|
|
TPC8129,LQ(SMOSFET P-CH 30V 9A 8SOP Toshiba Semiconductor and Storage |
2,736 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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