Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK60D08J1(Q)

TK60D08J1(Q)

MOSFET N-CH 75V 60A TO220

Toshiba Semiconductor and Storage
2,353 -

RFQ

TK60D08J1(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A (Ta) 4.5V, 10V 7.8mOhm @ 30A, 10V 2.3V @ 1mA 86 nC @ 10 V ±20V 5450 pF @ 10 V - 140W (Tc) 150°C (TJ) Through Hole
TK70D06J1(Q)

TK70D06J1(Q)

MOSFET N-CH 60V 70A TO220

Toshiba Semiconductor and Storage
2,769 -

RFQ

TK70D06J1(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 70A (Ta) 4.5V, 10V 6.4mOhm @ 35A, 10V 2.3V @ 1mA 87 nC @ 10 V ±20V 5450 pF @ 10 V - 45W (Tc) 150°C (TJ) Through Hole
TPC6006-H(TE85L,F)

TPC6006-H(TE85L,F)

MOSFET N-CH 40V 3.9A VS-6

Toshiba Semiconductor and Storage
2,787 -

RFQ

TPC6006-H(TE85L,F)

Ficha técnica

Tape & Reel (TR) U-MOSIII-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 3.9A (Ta) 4.5V, 10V 75mOhm @ 1.9A, 10V 2.3V @ 1mA 4.4 nC @ 10 V ±20V 251 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6104(TE85L,F,M)

TPC6104(TE85L,F,M)

MOSFET P-CH 20V 5.5A VS-6

Toshiba Semiconductor and Storage
3,627 -

RFQ

TPC6104(TE85L,F,M)

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 40mOhm @ 2.8A, 4.5V 1.2V @ 200µA 19 nC @ 5 V ±8V 1430 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6107(TE85L,F,M)

TPC6107(TE85L,F,M)

MOSFET P-CH 20V 4.5A VS-6

Toshiba Semiconductor and Storage
3,775 -

RFQ

TPC6107(TE85L,F,M)

Ficha técnica

Tape & Reel (TR) U-MOSIV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2V, 4.5V 55mOhm @ 2.2A, 4.5V 1.2V @ 200µA 9.8 nC @ 5 V ±12V 680 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC8014(TE12L,Q,M)

TPC8014(TE12L,Q,M)

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
3,991 -

RFQ

TPC8014(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 14mOhm @ 5.5A, 10V 2.5V @ 1mA 39 nC @ 10 V ±20V 1860 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8018-H(TE12LQM)

TPC8018-H(TE12LQM)

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage
2,633 -

RFQ

TPC8018-H(TE12LQM)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.6mOhm @ 9A, 10V 2.3V @ 1mA 38 nC @ 10 V ±20V 2265 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8021-H(TE12LQ,M

TPC8021-H(TE12LQ,M

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
3,193 -

RFQ

TPC8021-H(TE12LQ,M

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 17mOhm @ 5.5A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 640 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8022-H(TE12LQ,M

TPC8022-H(TE12LQ,M

MOSFET N-CH 40V 7.5A 8SOP

Toshiba Semiconductor and Storage
2,063 -

RFQ

TPC8022-H(TE12LQ,M

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 7.5A (Ta) 4.5V, 10V 27mOhm @ 3.8A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 650 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8031-H(TE12LQM)

TPC8031-H(TE12LQM)

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
2,735 -

RFQ

TPC8031-H(TE12LQM)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) - 13.3mOhm @ 5.5A, 10V 2.5V @ 1mA 21 nC @ 10 V - 2150 pF @ 10 V - - 150°C (TJ) Surface Mount
TPC8032-H(TE12LQM)

TPC8032-H(TE12LQM)

MOSFET N-CH 30V 15A 8SOP

Toshiba Semiconductor and Storage
3,489 -

RFQ

TPC8032-H(TE12LQM)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) - 6.5mOhm @ 7.5A, 10V 2.5V @ 1mA 33 nC @ 10 V - 2846 pF @ 10 V - - 150°C (TJ) Surface Mount
TPC8033-H(TE12LQM)

TPC8033-H(TE12LQM)

MOSFET N-CH 30V 17A 8SOP

Toshiba Semiconductor and Storage
3,240 -

RFQ

TPC8033-H(TE12LQM)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) - 5.3mOhm @ 8.5A, 10V 2.5V @ 1mA 42 nC @ 10 V - 3713 pF @ 10 V - - 150°C (TJ) Surface Mount
TPC8038-H(TE12L,Q)

TPC8038-H(TE12L,Q)

MOSFET N-CH 30V 12A 8SOP

Toshiba Semiconductor and Storage
3,730 -

RFQ

TPC8038-H(TE12L,Q)

Ficha técnica

Tape & Reel (TR) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) - 11.4mOhm @ 6A, 10V 2.5V @ 1mA 21 nC @ 10 V - 2150 pF @ 10 V - - 150°C (TJ) Surface Mount
TPC8110(TE12L,Q,M)

TPC8110(TE12L,Q,M)

MOSFET P-CH 40V 8A 8SOP

Toshiba Semiconductor and Storage
2,932 -

RFQ

TPC8110(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 4V, 10V 25mOhm @ 4A, 10V 2V @ 1mA 48 nC @ 10 V ±20V 2180 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8111(TE12L,Q,M)

TPC8111(TE12L,Q,M)

MOSFET P-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
3,472 -

RFQ

TPC8111(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 12mOhm @ 5.5A, 10V 2V @ 1mA 107 nC @ 10 V ±20V 5710 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8113(TE12L,Q)

TPC8113(TE12L,Q)

MOSFET P-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
2,562 -

RFQ

TPC8113(TE12L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 10mOhm @ 5.5A, 10V 2V @ 1mA 107 nC @ 10 V ±20V 4500 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8115(TE12L,Q,M)

TPC8115(TE12L,Q,M)

MOSFET P-CH 20V 10A 8SOP

Toshiba Semiconductor and Storage
2,393 -

RFQ

TPC8115(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR) U-MOSIV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 10mOhm @ 5A, 4.5V 1.2V @ 200µA 115 nC @ 5 V ±8V 9130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8A02-H(TE12L,Q)

TPC8A02-H(TE12L,Q)

MOSFET N-CH 30V 16A 8SOP

Toshiba Semiconductor and Storage
2,282 -

RFQ

TPC8A02-H(TE12L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.6mOhm @ 8A, 10V 2.3V @ 1mA 34 nC @ 10 V ±20V 1970 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPCA8003-H(TE12LQM

TPCA8003-H(TE12LQM

MOSFET N-CH 30V 35A 8SOP

Toshiba Semiconductor and Storage
2,228 -

RFQ

TPCA8003-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 6.6mOhm @ 18A, 10V 2.3V @ 1mA 25 nC @ 10 V ±20V 1465 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8005-H(TE12LQM

TPCA8005-H(TE12LQM

MOSFET N-CH 30V 27A 8SOP

Toshiba Semiconductor and Storage
2,293 -

RFQ

TPCA8005-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V 2.3V @ 1mA 24 nC @ 10 V ±20V 1395 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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