Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK14E65W5,S1X

TK14E65W5,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage
2,869 -

RFQ

TK14E65W5,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK12A80W,S4X

TK12A80W,S4X

MOSFET N-CH 800V 11.5A TO220SIS

Toshiba Semiconductor and Storage
3,056 -

RFQ

TK12A80W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK17A80W,S4X

TK17A80W,S4X

MOSFET N-CH 800V 17A TO220SIS

Toshiba Semiconductor and Storage
2,675 -

RFQ

TK17A80W,S4X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK100A06N1,S4X

TK100A06N1,S4X

MOSFET N-CH 60V 100A TO220SIS

Toshiba Semiconductor and Storage
3,401 -

RFQ

TK100A06N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 2.7mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 45W (Tc) 150°C (TJ) Through Hole
TK10E60W,S1VX

TK10E60W,S1VX

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage
2,204 -

RFQ

TK10E60W,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TK100A10N1,S4X

TK100A10N1,S4X

MOSFET N-CH 100V 100A TO220SIS

Toshiba Semiconductor and Storage
3,287 -

RFQ

TK100A10N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 3.8mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 8800 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK25E60X,S1X

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage
3,839 -

RFQ

TK25E60X,S1X

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK16A60W,S4VX

TK16A60W,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage
3,573 -

RFQ

TK16A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
2SK2266(TE24R,Q)

2SK2266(TE24R,Q)

MOSFET N-CH 60V 45A TO220SM

Toshiba Semiconductor and Storage
3,628 -

RFQ

2SK2266(TE24R,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 4V, 10V 30mOhm @ 25A, 10V 2V @ 1mA 60 nC @ 10 V ±20V 1800 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
2SK2376(Q)

2SK2376(Q)

MOSFET N-CH 60V 45A TO220FL

Toshiba Semiconductor and Storage
3,942 -

RFQ

2SK2376(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 4V, 10V 17mOhm @ 25A, 10V 2V @ 1mA 110 nC @ 10 V ±20V 3350 pF @ 10 V - 100W (Tc) 150°C (TJ) Through Hole
2SK3309(Q)

2SK3309(Q)

MOSFET N-CH 450V 10A TO220FL

Toshiba Semiconductor and Storage
2,824 -

RFQ

2SK3309(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 10A (Ta) 10V 650mOhm @ 5A, 10V 5V @ 1mA 23 nC @ 10 V ±30V 920 pF @ 10 V - 65W (Tc) 150°C (TJ) Through Hole
2SK3309(TE24L,Q)

2SK3309(TE24L,Q)

MOSFET N-CH 450V 10A TO220SM

Toshiba Semiconductor and Storage
2,294 -

RFQ

2SK3309(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 10A (Ta) 10V 650mOhm @ 5A, 10V 5V @ 1mA 23 nC @ 10 V ±30V 920 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
TK12A60U(Q,M)

TK12A60U(Q,M)

MOSFET N-CH 600V 12A TO220SIS

Toshiba Semiconductor and Storage
3,000 -

RFQ

TK12A60U(Q,M)

Ficha técnica

Tube DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 400mOhm @ 6A, 10V 5V @ 1mA 14 nC @ 10 V ±30V 720 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
TK12J60U(F)

TK12J60U(F)

MOSFET N-CH 600V 12A TO3P

Toshiba Semiconductor and Storage
2,116 -

RFQ

TK12J60U(F)

Ficha técnica

Tray DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 400mOhm @ 6A, 10V 5V @ 1mA 14 nC @ 10 V ±30V 720 pF @ 10 V - 144W (Tc) 150°C (TJ) Through Hole
TK15J60U(F)

TK15J60U(F)

MOSFET N-CH 600V 15A TO3P

Toshiba Semiconductor and Storage
3,579 -

RFQ

TK15J60U(F)

Ficha técnica

Tray DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 170W (Tc) 150°C (TJ) Through Hole
TK72A12N1,S4X

TK72A12N1,S4X

MOSFET N-CH 120V 72A TO220SIS

Toshiba Semiconductor and Storage
2,865 -

RFQ

TK72A12N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Tc) 10V 4.5mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
TK17A65W5,S5X

TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,474 -

RFQ

TK17A65W5,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 230mOhm @ 8.7A, 10V 4.5V @ 900µA 50 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK25A60X5,S5X

TK25A60X5,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage
2,622 -

RFQ

TK25A60X5,S5X

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK20J60U(F)

TK20J60U(F)

MOSFET N-CH 600V 20A TO3P

Toshiba Semiconductor and Storage
3,547 -

RFQ

TK20J60U(F)

Ficha técnica

Tray DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 5V @ 1mA 27 nC @ 10 V ±30V 1470 pF @ 10 V - 190W (Tc) 150°C (TJ) Through Hole
TK55D10J1(Q)

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

Toshiba Semiconductor and Storage
2,999 -

RFQ

TK55D10J1(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 27A, 10V 2.3V @ 1mA 110 nC @ 10 V ±20V 5700 pF @ 10 V - 140W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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