Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK31E60X,S1X

TK31E60X,S1X

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage
2,440 -

RFQ

TK31E60X,S1X

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK31N60X,S1F

TK31N60X,S1F

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage
3,342 -

RFQ

TK31N60X,S1F

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK090N65Z,S1F

TK090N65Z,S1F

MOSFET N-CH 650V 30A TO247

Toshiba Semiconductor and Storage
2,679 -

RFQ

TK090N65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Through Hole
2SK3128(Q)

2SK3128(Q)

MOSFET N-CH 30V 60A TO3P

Toshiba Semiconductor and Storage
2,628 -

RFQ

2SK3128(Q)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 10V 12mOhm @ 30A, 10V 3V @ 1mA 66 nC @ 10 V ±20V 2300 pF @ 10 V - 150W (Tc) 150°C (TJ) Through Hole
TK31N60W5,S1VF

TK31N60W5,S1VF

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage
3,969 -

RFQ

TK31N60W5,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 99mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) Through Hole
TK35A65W,S5X

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage
2,395 -

RFQ

TK35A65W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
TK39N60X,S1F

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage
3,291 -

RFQ

TK39N60X,S1F

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK39J60W,S1VQ

TK39J60W,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage
3,877 -

RFQ

TK39J60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK62N60X,S1F

TK62N60X,S1F

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage
2,239 -

RFQ

TK62N60X,S1F

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
TK040Z65Z,S1F

TK040Z65Z,S1F

MOSFET N-CH 650V 57A TO247-4L

Toshiba Semiconductor and Storage
3,741 -

RFQ

TK040Z65Z,S1F

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C Through Hole
2SJ304(F)

2SJ304(F)

MOSFET P-CH 60V 14A TO220NIS

Toshiba Semiconductor and Storage
2,954 -

RFQ

2SJ304(F)

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 14A (Ta) 4V, 10V 120mOhm @ 7A, 10V 2V @ 1mA 45 nC @ 10 V ±20V 1200 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
2SJ360(F)

2SJ360(F)

MOSFET P-CH 60V 1A PW-MINI

Toshiba Semiconductor and Storage
2,420 -

RFQ

2SJ360(F)

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1A (Ta) 4V, 10V 730mOhm @ 500mA, 10V 2V @ 1mA 6.5 nC @ 10 V ±20V 155 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
2SJ360(TE12L,F)

2SJ360(TE12L,F)

MOSFET P-CH 60V 1A PW-MINI

Toshiba Semiconductor and Storage
3,241 -

RFQ

2SJ360(TE12L,F)

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1A (Ta) 4V, 10V 730mOhm @ 500mA, 10V 2V @ 1mA 6.5 nC @ 10 V ±20V 155 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
2SJ380(F)

2SJ380(F)

MOSFET P-CH 100V 12A TO220NIS

Toshiba Semiconductor and Storage
2,945 -

RFQ

2SJ380(F)

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12A (Ta) 4V, 10V 210mOhm @ 6A, 10V 2V @ 1mA 48 nC @ 10 V ±20V 1100 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
2SJ610(TE16L1,NQ)

2SJ610(TE16L1,NQ)

MOSFET P-CH 250V 2A PW-MOLD

Toshiba Semiconductor and Storage
3,000 -

RFQ

2SJ610(TE16L1,NQ)

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2A (Ta) 10V 2.55Ohm @ 1A, 10V 3.5V @ 1mA 24 nC @ 10 V ±20V 381 pF @ 10 V - 20W (Ta) 150°C (TJ) Surface Mount
2SJ681(Q)

2SJ681(Q)

MOSFET P-CH 60V 5A PW-MOLD2

Toshiba Semiconductor and Storage
2,168 -

RFQ

2SJ681(Q)

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 170mOhm @ 2.5A, 10V 2V @ 1mA 15 nC @ 10 V ±20V 700 pF @ 10 V - 20W (Ta) 150°C (TJ) Through Hole
2SK1119(F)

2SK1119(F)

MOSFET N-CH 1000V 4A TO220AB

Toshiba Semiconductor and Storage
3,839 -

RFQ

2SK1119(F)

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 4A (Ta) 10V 3.8Ohm @ 2A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 700 pF @ 25 V - 100W (Tc) 150°C (TJ) Through Hole
2SK2507(F)

2SK2507(F)

MOSFET N-CH 50V 25A TO220NIS

Toshiba Semiconductor and Storage
2,690 -

RFQ

2SK2507(F)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 25A (Ta) 4V, 10V 46mOhm @ 12A, 10V 2V @ 1mA 25 nC @ 10 V ±20V 900 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
TK39A60W,S4VX

TK39A60W,S4VX

MOSFET N-CH 600V 38.8A TO220SIS

Toshiba Semiconductor and Storage
3,558 -

RFQ

TK39A60W,S4VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
TK62J60W,S1VQ

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage
3,388 -

RFQ

TK62J60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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