Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK290A65Y,S4X

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage
2,101 -

RFQ

TK290A65Y,S4X

Ficha técnica

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
TK34E10N1,S1X

TK34E10N1,S1X

MOSFET N-CH 100V 75A TO220

Toshiba Semiconductor and Storage
3,383 -

RFQ

TK34E10N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 103W (Tc) 150°C (TJ) Through Hole
TK15A60U(STA4,Q,M)

TK15A60U(STA4,Q,M)

MOSFET N-CH 600V 15A TO220SIS

Toshiba Semiconductor and Storage
2,462 -

RFQ

TK15A60U(STA4,Q,M)

Ficha técnica

Tube DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
TPC6109-H(TE85L,FM

TPC6109-H(TE85L,FM

MOSFET P-CH 30V 5A VS-6

Toshiba Semiconductor and Storage
2,195 -

RFQ

TPC6109-H(TE85L,FM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII-H Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 59mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3 nC @ 10 V ±20V 490 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TK7A90E,S4X

TK7A90E,S4X

MOSFET N-CH 900V 7A TO220SIS

Toshiba Semiconductor and Storage
2,241 -

RFQ

TK7A90E,S4X

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK3R3A06PL,S4X

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,515 -

RFQ

TK3R3A06PL,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 42W (Tc) 175°C Through Hole
TK100E06N1,S1X

TK100E06N1,S1X

MOSFET N CH 60V 100A TO-220

Toshiba Semiconductor and Storage
2,702 -

RFQ

TK100E06N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 2.3mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 255W (Tc) 150°C (TJ) Through Hole
TK6R7A10PL,S4X

TK6R7A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,149 -

RFQ

TK6R7A10PL,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 4.5V, 10V 6.7mOhm @ 28A, 10V 2.5V @ 500µA 58 nC @ 10 V ±20V 3455 pF @ 50 V - 42W (Tc) 175°C Through Hole
TK3R2E06PL,S1X

TK3R2E06PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,059 -

RFQ

TK3R2E06PL,S1X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 168W (Tc) 175°C Through Hole
TK9A90E,S4X

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage
2,594 -

RFQ

TK9A90E,S4X

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TKR74F04PB,LXGQ

TKR74F04PB,LXGQ

MOSFET N-CH 40V 250A TO220SM

Toshiba Semiconductor and Storage
3,094 -

RFQ

TKR74F04PB,LXGQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 250A (Ta) 6V, 10V 0.74mOhm @ 125A, 10V 3V @ 1mA 227 nC @ 10 V ±20V 14200 pF @ 10 V - 375W (Tc) 175°C Surface Mount
TK40E10N1,S1X

TK40E10N1,S1X

MOSFET N CH 100V 90A TO220

Toshiba Semiconductor and Storage
2,980 -

RFQ

TK40E10N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 126W (Tc) 150°C (TJ) Through Hole
TK40A10N1,S4X

TK40A10N1,S4X

MOSFET N-CH 100V 40A TO220SIS

Toshiba Semiconductor and Storage
3,420 -

RFQ

TK40A10N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
TK7J90E,S1E

TK7J90E,S1E

MOSFET N-CH 900V 7A TO3P

Toshiba Semiconductor and Storage
2,598 -

RFQ

TK7J90E,S1E

Ficha técnica

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
TK14A65W,S5X

TK14A65W,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage
3,770 -

RFQ

TK14A65W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) Through Hole
TK16E60W5,S1VX

TK16E60W5,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage
3,792 -

RFQ

TK16E60W5,S1VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK3R2A10PL,S4X

TK3R2A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,325 -

RFQ

TK3R2A10PL,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 54W (Tc) 175°C Through Hole
TK20A60W,S5VX

TK20A60W,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage
3,251 -

RFQ

TK20A60W,S5VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK3R9E10PL,S1X

TK3R9E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,714 -

RFQ

TK3R9E10PL,S1X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 50A, 10V 2.5V @ 1mA 96 nC @ 10 V ±20V 6320 pF @ 50 V - 230W (Tc) 175°C Through Hole
TK17A65W,S5X

TK17A65W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,818 -

RFQ

TK17A65W,S5X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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