Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK39N60W,S1VF

TK39N60W,S1VF

MOSFET N CH 600V 38.8A TO247

Toshiba Semiconductor and Storage
3,196 -

RFQ

TK39N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
2SK2544(F)

2SK2544(F)

MOSFET N-CH 600V 6A TO220AB

Toshiba Semiconductor and Storage
3,934 -

RFQ

2SK2544(F)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 1300 pF @ 10 V - 80W (Tc) 150°C (TJ) Through Hole
2SK2744(F)

2SK2744(F)

MOSFET N-CH 50V 45A TO3P

Toshiba Semiconductor and Storage
3,599 -

RFQ

2SK2744(F)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 45A (Ta) 10V 20mOhm @ 25A, 10V 3.5V @ 1mA 68 nC @ 10 V ±20V 2300 pF @ 10 V - 125W (Tc) 150°C (TJ) Through Hole
2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

MOSFET N-CH 900V 1A DP

Toshiba Semiconductor and Storage
2,192 -

RFQ

2SK2845(TE16L1,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1A (Ta) 10V 9Ohm @ 500mA, 10V 4V @ 1mA 15 nC @ 10 V ±30V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
2SK2866(F)

2SK2866(F)

MOSFET N-CH 600V 10A TO220AB

Toshiba Semiconductor and Storage
2,165 -

RFQ

2SK2866(F)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2040 pF @ 10 V - 125W (Tc) 150°C (TJ) Through Hole
2SK2883(TE24L,Q)

2SK2883(TE24L,Q)

MOSFET N-CH 800V 3A TO220SM

Toshiba Semiconductor and Storage
2,250 -

RFQ

2SK2883(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 3.6Ohm @ 1.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 750 pF @ 25 V - 75W (Tc) 150°C (TJ) Surface Mount
2SK3313(Q)

2SK3313(Q)

MOSFET N-CH 500V 12A TO220NIS

Toshiba Semiconductor and Storage
2,755 -

RFQ

2SK3313(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 620mOhm @ 6A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2040 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
2SK3342(TE16L1,NQ)

2SK3342(TE16L1,NQ)

MOSFET N-CH 250V 4.5A PW-MOLD

Toshiba Semiconductor and Storage
3,026 -

RFQ

2SK3342(TE16L1,NQ)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V 3.5V @ 1mA 10 nC @ 10 V ±20V 440 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
2SK3388(TE24L,Q)

2SK3388(TE24L,Q)

MOSFET N-CH 250V 20A 4TFP

Toshiba Semiconductor and Storage
2,864 -

RFQ

2SK3388(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 105mOhm @ 10A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4000 pF @ 10 V - 125W (Tc) 150°C (TJ) Surface Mount
2SK3403(Q)

2SK3403(Q)

MOSFET N-CH 450V 13A TO220FL

Toshiba Semiconductor and Storage
3,243 -

RFQ

2SK3403(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 400mOhm @ 6A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 1600 pF @ 25 V - 100W (Tc) 150°C (TJ) Through Hole
2SK3462(TE16L1,NQ)

2SK3462(TE16L1,NQ)

MOSFET N-CH 250V 3A PW-MOLD

Toshiba Semiconductor and Storage
3,621 -

RFQ

2SK3462(TE16L1,NQ)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Ta) 10V 1.7Ohm @ 1.5A, 10V 3.5V @ 1mA 12 nC @ 10 V ±20V 267 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
2SK3466(TE24L,Q)

2SK3466(TE24L,Q)

MOSFET N-CH 500V 5A 4TFP

Toshiba Semiconductor and Storage
2,376 -

RFQ

2SK3466(TE24L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 17 nC @ 10 V ±30V 780 pF @ 10 V - 50W (Tc) 150°C (TJ) Surface Mount
2SK3662(F)

2SK3662(F)

MOSFET N-CH 60V 35A TO220NIS

Toshiba Semiconductor and Storage
3,016 -

RFQ

2SK3662(F)

Ficha técnica

Bulk U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta) 4V, 10V 12.5mOhm @ 18A, 10V 2.5V @ 1mA 91 nC @ 10 V ±20V 5120 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
2SK3844(Q)

2SK3844(Q)

MOSFET N-CH 60V 45A TO220NIS

Toshiba Semiconductor and Storage
3,951 -

RFQ

2SK3844(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 10V 5.8mOhm @ 23A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 12400 pF @ 10 V - 45W (Tc) 150°C (TJ) Through Hole
2SK3868(Q,M)

2SK3868(Q,M)

MOSFET N-CH 500V 5A TO220SIS

Toshiba Semiconductor and Storage
2,709 -

RFQ

2SK3868(Q,M)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 550 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
2SK3906(Q)

2SK3906(Q)

MOSFET N-CH 600V 20A TO3P

Toshiba Semiconductor and Storage
3,691 -

RFQ

2SK3906(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 330mOhm @ 10A, 10V 4V @ 1mA 60 nC @ 10 V ±30V 4250 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
2SK4016(Q)

2SK4016(Q)

MOSFET N-CH 600V 13A TO220SIS

Toshiba Semiconductor and Storage
2,328 -

RFQ

2SK4016(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 500mOhm @ 6.5A, 10V 4V @ 1mA 62 nC @ 10 V ±30V 3100 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
2SK4017(Q)

2SK4017(Q)

MOSFET N-CH 60V 5A PW-MOLD2

Toshiba Semiconductor and Storage
2,567 -

RFQ

2SK4017(Q)

Ficha técnica

Bulk U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 100mOhm @ 2.5A, 10V 2.5V @ 1mA 15 nC @ 10 V ±20V 730 pF @ 10 V - 20W (Tc) 150°C (TJ) Through Hole
2SK4021(Q)

2SK4021(Q)

MOSFET N-CH 250V 4.5A PW-MOLD2

Toshiba Semiconductor and Storage
3,850 -

RFQ

2SK4021(Q)

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V 3.5V @ 1mA 10 nC @ 10 V ±20V 440 pF @ 10 V - 20W (Tc) 150°C (TJ) Through Hole
TPC8026(TE12L,Q,M)

TPC8026(TE12L,Q,M)

MOSFET N-CH 30V 13A 8SOP

Toshiba Semiconductor and Storage
3,550 -

RFQ

TPC8026(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.6mOhm @ 6.5A, 10V 2.5V @ 1mA 42 nC @ 10 V ±20V 1800 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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