Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPCA8008-H(TE12LQM

TPCA8008-H(TE12LQM

MOSFET N-CH 250V 4A 8SOP

Toshiba Semiconductor and Storage
2,784 -

RFQ

TPCA8008-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Ta) 10V 580mOhm @ 2A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8010-H(TE12LQM

TPCA8010-H(TE12LQM

MOSFET N-CH 200V 5.5A 8SOP

Toshiba Semiconductor and Storage
3,040 -

RFQ

TPCA8010-H(TE12LQM

Ficha técnica

Tape & Reel (TR) π-MOSV Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Ta) 10V 450mOhm @ 2.7A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8011-H(TE12LQM

TPCA8011-H(TE12LQM

MOSFET N-CH 20V 40A 8SOP

Toshiba Semiconductor and Storage
2,848 -

RFQ

TPCA8011-H(TE12LQM

Ficha técnica

Tape & Reel (TR) U-MOSIII-H Obsolete N-Channel MOSFET (Metal Oxide) 20 V 40A (Ta) 2.5V, 4.5V 3.5mOhm @ 20A, 4.5V 1.3V @ 200µA 32 nC @ 5 V ±12V 2900 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8012-H(TE12LQM

TPCA8012-H(TE12LQM

MOSFET N-CH 30V 40A 8SOP

Toshiba Semiconductor and Storage
3,119 -

RFQ

TPCA8012-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 4.9mOhm @ 20A, 10V 2.5V @ 1mA 42 nC @ 10 V ±20V 3713 pF @ 10 V - - 150°C (TJ) Surface Mount
TPCA8018-H(TE12LQM

TPCA8018-H(TE12LQM

MOSFET N-CH 30V 30A 8SOP

Toshiba Semiconductor and Storage
3,051 -

RFQ

TPCA8018-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 6.2mOhm @ 15A, 10V 2.5V @ 1mA 34 nC @ 10 V ±20V 2846 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8021-H(TE12LQM

TPCA8021-H(TE12LQM

MOSFET N-CH 30V 27A 8SOP

Toshiba Semiconductor and Storage
3,897 -

RFQ

TPCA8021-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V 2.3V @ 1mA 23 nC @ 10 V ±20V 1395 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8023-H(TE12LQM

TPCA8023-H(TE12LQM

MOSFET N-CH 30V 21A 8SOP

Toshiba Semiconductor and Storage
2,334 -

RFQ

TPCA8023-H(TE12LQM

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 12.9mOhm @ 11A, 10V 2.5V @ 1mA 21 nC @ 10 V ±20V 2150 pF @ 10 V - 1.6W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCA8031-H(TE12L,Q

TPCA8031-H(TE12L,Q

MOSFET N-CH 30V 24A 8SOP

Toshiba Semiconductor and Storage
3,979 -

RFQ

TPCA8031-H(TE12L,Q

Ficha técnica

Tape & Reel (TR) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 2.5V @ 1mA 21 nC @ 10 V ±20V 2150 pF @ 10 V - 1.6W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCA8102(TE12L,Q,M

TPCA8102(TE12L,Q,M

MOSFET P-CH 30V 40A 8SOP

Toshiba Semiconductor and Storage
2,894 -

RFQ

TPCA8102(TE12L,Q,M

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4V, 10V 6mOhm @ 20A, 10V 2V @ 1mA 109 nC @ 10 V ±20V 4600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8103(TE12L,Q,M

TPCA8103(TE12L,Q,M

MOSFET P-CH 30V 40A 8SOP

Toshiba Semiconductor and Storage
2,533 -

RFQ

TPCA8103(TE12L,Q,M

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4V, 10V 4.2mOhm @ 20A, 10V 2V @ 1mA 184 nC @ 10 V ±20V 7880 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8105(TE12L,Q,M

TPCA8105(TE12L,Q,M

MOSFET P-CH 12V 6A 8SOP

Toshiba Semiconductor and Storage
3,984 -

RFQ

TPCA8105(TE12L,Q,M

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 4.5V 33mOhm @ 3A, 4.5V 1.2V @ 200µA 18 nC @ 5 V ±8V 1600 pF @ 10 V - 1.6W (Ta), 20W (Tc) 150°C (TJ) Surface Mount
TPCA8A01-H(TE12L,Q

TPCA8A01-H(TE12L,Q

MOSFET N-CH 30V 36A 8SOP

Toshiba Semiconductor and Storage
2,320 -

RFQ

TPCA8A01-H(TE12L,Q

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 36A (Ta) 4.5V, 10V 5.6mOhm @ 18A, 10V 2.3V @ 1mA 35 nC @ 10 V ±20V 1970 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCF8102(TE85L,F,M

TPCF8102(TE85L,F,M

MOSFET P-CH 20V 6A VS-8

Toshiba Semiconductor and Storage
3,647 -

RFQ

TPCF8102(TE85L,F,M

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 30mOhm @ 3A, 4.5V 1.2V @ 200µA 19 nC @ 5 V ±8V 1550 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPCP8001-H(TE85LFM

TPCP8001-H(TE85LFM

MOSFET N-CH 30V 7.2A PS-8

Toshiba Semiconductor and Storage
3,275 -

RFQ

TPCP8001-H(TE85LFM

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 16mOhm @ 3.6A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 640 pF @ 10 V - 1W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TK20N60W5,S1VF

TK20N60W5,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage
3,209 -

RFQ

TK20N60W5,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK16N60W,S1VF

TK16N60W,S1VF

MOSFET N CH 600V 15.8A TO247

Toshiba Semiconductor and Storage
2,649 -

RFQ

TK16N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
TK14N65W5,S1F

TK14N65W5,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage
2,554 -

RFQ

TK14N65W5,S1F

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK17E80W,S1X

TK17E80W,S1X

MOSFET N-CHANNEL 800V 17A TO220

Toshiba Semiconductor and Storage
2,454 -

RFQ

TK17E80W,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 180W (Tc) 150°C Through Hole
TK25N60X,S1F

TK25N60X,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage
3,295 -

RFQ

TK25N60X,S1F

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK16J60W,S1VE

TK16J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,668 -

RFQ

TK16J60W,S1VE

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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