Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK140N25T

IXFK140N25T

MOSFET N-CH 250V 140A TO264AA

IXYS
2,678 -

RFQ

IXFK140N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 140A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK140N20P

IXTK140N20P

MOSFET N-CH 200V 140A TO264

IXYS
3,317 -

RFQ

IXTK140N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 18mOhm @ 70A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK200N10P

IXTK200N10P

MOSFET N-CH 100V 200A TO264

IXYS
2,229 -

RFQ

IXTK200N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 100A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7600 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK140N20P

IXFK140N20P

MOSFET N-CH 200V 140A TO264AA

IXYS
2,863 -

RFQ

IXFK140N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V, 15V 18mOhm @ 70A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK200N10P

IXFK200N10P

MOSFET N-CH 100V 200A TO264AA

IXYS
2,445 -

RFQ

IXFK200N10P

Ficha técnica

Bulk HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 100A, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH16N10D2

IXTH16N10D2

MOSFET N-CH 100V 16A TO247

IXYS
3,913 -

RFQ

IXTH16N10D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 0V 64mOhm @ 8A, 0V - 225 nC @ 5 V ±20V 5700 pF @ 25 V Depletion Mode 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH12N150

IXTH12N150

MOSFET N-CH 1500V 12A TO247

IXYS
3,635 -

RFQ

IXTH12N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V 2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT12N150

IXTT12N150

MOSFET N-CH 1500V 12A TO268

IXYS
2,839 -

RFQ

IXTT12N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V 2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT24N90P

IXFT24N90P

MOSFET N-CH 900V 24A TO268

IXYS
3,291 -

RFQ

IXFT24N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH10N100D2

IXTH10N100D2

MOSFET N-CH 1000V 10A TO247

IXYS
3,936 -

RFQ

IXTH10N100D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V - 200 nC @ 5 V ±20V 5320 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH15N100Q3

IXFH15N100Q3

MOSFET N-CH 1000V 15A TO247AD

IXYS
3,811 -

RFQ

IXFH15N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 1.05Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK64N50P

IXFK64N50P

MOSFET N-CH 500V 64A TO264AA

IXYS
3,513 -

RFQ

IXFK64N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 64A (Tc) 10V 85mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT180N20X3HV

IXFT180N20X3HV

MOSFET N-CH 200V 180A TO268HV

IXYS
2,605 -

RFQ

IXFT180N20X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 7.5mOhm @ 90A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT120N30X3HV

IXFT120N30X3HV

MOSFET N-CH 300V 120A TO268HV

IXYS
2,451 -

RFQ

IXFT120N30X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 11mOhm @ 60A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 1376 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ170N10P

IXTQ170N10P

MOSFET N-CH 100V 170A TO3P

IXYS
2,441 -

RFQ

IXTQ170N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK98N50P3

IXFK98N50P3

MOSFET N-CH 500V 98A TO264AA

IXYS
3,134 -

RFQ

IXFK98N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 98A (Tc) 10V 50mOhm @ 500mA, 10V 5V @ 8mA 197 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX100N65X2

IXFX100N65X2

MOSFET N-CH 650V 100A PLUS247-3

IXYS
2,932 -

RFQ

IXFX100N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 100A (Tc) 10V 30mOhm @ 50A, 10V 5.5V @ 4mA 180 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK100N65X2

IXFK100N65X2

MOSFET N-CH 650V 100A TO264

IXYS
2,106 -

RFQ

IXFK100N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 100A (Tc) 10V 30mOhm @ 50A, 10V 5.5V @ 4mA 180 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N25T

IXFX180N25T

MOSFET N-CH 250V 180A PLUS247-3

IXYS
456 -

RFQ

IXFX180N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 180A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK160N30T

IXFK160N30T

MOSFET N-CH 300V 160A TO264AA

IXYS
2,350 -

RFQ

IXFK160N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 160A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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