Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN170N30P

IXFN170N30P

MOSFET N-CH 300V 138A SOT-227B

IXYS
3,877 -

RFQ

IXFN170N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 138A (Tc) 10V 18mOhm @ 85A, 10V 4.5V @ 1mA 258 nC @ 10 V ±20V 20000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN300N10P

IXFN300N10P

MOSFET N-CH 100V 295A SOT227B

IXYS
3,441 -

RFQ

IXFN300N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 295A (Tc) 10V 5.5mOhm @ 50A, 10V 5V @ 8mA 279 nC @ 10 V ±20V 23000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTT1N250HV

IXTT1N250HV

MOSFET N-CH 2500V 1.5A TO268

IXYS
3,553 -

RFQ

IXTT1N250HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 1.5A (Tc) 10V 40Ohm @ 750mA, 10V 4V @ 250µA 41 nC @ 10 V ±20V 1660 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXKK85N60C

IXKK85N60C

MOSFET N-CH 600V 85A TO264A

IXYS
2,541 -

RFQ

IXKK85N60C

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 85A (Tc) 10V 36mOhm @ 55A, 10V 4V @ 4mA 650 nC @ 10 V ±20V - Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXFN38N100P

IXFN38N100P

MOSFET N-CH 1000V 38A SOT-227B

IXYS
2,307 -

RFQ

IXFN38N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 210mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB40N110P

IXFB40N110P

MOSFET N-CH 1100V 40A PLUS264

IXYS
2,777 -

RFQ

IXFB40N110P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 40A (Tc) 10V 260mOhm @ 20A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN110N20L2

IXTN110N20L2

MOSFET N-CH 200V 100A SOT227B

IXYS
2,965 -

RFQ

IXTN110N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 500 nC @ 10 V ±20V 23000 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB70N100X

IXFB70N100X

MOSFET N-CH 1000V 70A PLUS264

IXYS
2,494 -

RFQ

IXFB70N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 70A (Tc) 10V 89mOhm @ 35A, 10V 6V @ 8mA 350 nC @ 10 V ±30V 9160 pF @ 25 V - 1785W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN52N100X

IXFN52N100X

MOSFET N-CH 1000V 44A SOT227B

IXYS
3,573 -

RFQ

IXFN52N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 44A (Tc) 10V 125mOhm @ 26A, 10V 6V @ 4mA 245 nC @ 10 V ±30V 6725 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN46N50L

IXTN46N50L

MOSFET N-CH 500V 46A SOT-227B

IXYS
2,384 -

RFQ

IXTN46N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN8N150L

IXTN8N150L

MOSFET N-CH 1500V 7.5A SOT-227B

IXYS
3,199 -

RFQ

IXTN8N150L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1500 V 7.5A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB150N65X2

IXFB150N65X2

MOSFET N-CH 650V 150A PLUS264

IXYS
2,844 -

RFQ

IXFB150N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 150A (Tc) 10V 17mOhm @ 75A, 10V 5.5V @ 8mA 430 nC @ 10 V ±30V 20400 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N100Q3

IXFN44N100Q3

MOSFET N-CH 1000V 38A SOT227B

IXYS
2,622 -

RFQ

IXFN44N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 8mA 264 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN110N85X

IXFN110N85X

MOSFET N-CH 850V 110A SOT227B

IXYS
2,579 -

RFQ

IXFN110N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 110A (Tc) 10V 33mOhm @ 55A, 10V 5.5V @ 8mA 425 nC @ 10 V ±30V 17000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN70N100X

IXFN70N100X

MOSFET N-CH 1000V 56A SOT227B

IXYS
3,027 -

RFQ

IXFN70N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 56A (Tc) 10V 89mOhm @ 35A, 10V 6V @ 8mA 350 nC @ 10 V ±30V 9150 pF @ 25 V - 1200W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN120N65X2

IXFN120N65X2

MOSFET N-CH 650V 108A SOT227B

IXYS
3,401 -

RFQ

IXFN120N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 108A (Tc) 10V 24mOhm @ 54A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN30N100L

IXTN30N100L

MOSFET N-CH 1000V 30A SOT227B

IXYS
3,921 -

RFQ

IXTN30N100L

Ficha técnica

Bulk Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 15A, 20V 5.5V @ 250µA 545 nC @ 20 V ±30V 13700 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN50N120SK

IXFN50N120SK

SICFET N-CH 1200V 48A SOT227B

IXYS
3,403 -

RFQ

IXFN50N120SK

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 48A (Tc) 20V 52mOhm @ 40A, 20V 2.8V @ 10mA 115 nC @ 20 V +20V, -5V 1895 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
IRFP250

IRFP250

MOSFET N-CH 200V 30A TO247AD

IXYS
3,126 -

RFQ

IRFP250

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2970 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP470

IRFP470

MOSFET N-CH 500V 24A TO247AD

IXYS
2,038 -

RFQ

IRFP470

Ficha técnica

Tube MegaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 230mOhm @ 12A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 2427 Record«Prev1... 4445464748495051...122Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario