Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP100N15X4

IXTP100N15X4

MOSFET N-CH 150V 100A TO220

IXYS
3,397 -

RFQ

IXTP100N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 10V 11.5mOhm @ 50A, 10V 4.5V @ 250µA 74 nC @ 10 V ±20V 3970 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA90N20X3

IXFA90N20X3

MOSFET N-CH 200V 90A TO263AA

IXYS
2,227 -

RFQ

IXFA90N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA72N30X3

IXFA72N30X3

MOSFET N-CH 300V 72A TO263AA

IXYS
3,473 -

RFQ

IXFA72N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFQ60N50P3

IXFQ60N50P3

MOSFET N-CH 500V 60A TO3P

IXYS
2,579 -

RFQ

IXFQ60N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH20N65X

IXTH20N65X

MOSFET N-CH 650V 20A TO247

IXYS
3,270 -

RFQ

IXTH20N65X

Ficha técnica

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH48N65X2

IXTH48N65X2

MOSFET N-CH 650V 48A TO247

IXYS
2,581 -

RFQ

IXTH48N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 68mOhm @ 24A, 10V 4.5V @ 4mA 77 nC @ 10 V ±30V 4420 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH36N50P

IXFH36N50P

MOSFET N-CH 500V 36A TO247AD

IXYS
3,537 -

RFQ

IXFH36N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ72N30X3

IXFQ72N30X3

MOSFET N-CH 300V 72A TO3P

IXYS
2,868 -

RFQ

IXFQ72N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT82N25P

IXTT82N25P

MOSFET N-CH 250V 82A TO268

IXYS
3,874 -

RFQ

IXTT82N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT120N15P

IXTT120N15P

MOSFET N-CH 150V 120A TO268

IXYS
3,622 -

RFQ

IXTT120N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT36N50P

IXFT36N50P

MOSFET N-CH 500V 36A TO268

IXYS
2,041 -

RFQ

IXFT36N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH36N60P

IXFH36N60P

MOSFET N-CH 600V 36A TO247AD

IXYS
3,251 -

RFQ

IXFH36N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH6N150

IXTH6N150

MOSFET N-CH 1500V 6A TO247

IXYS
3,765 -

RFQ

IXTH6N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 6A (Tc) 10V 3.5Ohm @ 500mA, 10V 5V @ 250µA 67 nC @ 10 V ±20V 2230 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH6N120

IXFH6N120

MOSFET N-CH 1200V 6A TO247AD

IXYS
3,891 -

RFQ

IXFH6N120

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.6Ohm @ 3A, 10V 5V @ 2.5mA 56 nC @ 10 V ±20V 1950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ100N25P

IXTQ100N25P

MOSFET N-CH 250V 100A TO3P

IXYS
3,779 -

RFQ

IXTQ100N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 24mOhm @ 50A, 10V 5V @ 250µA 185 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH150N15X4

IXTH150N15X4

MOSFET N-CH 150V 150A TO247

IXYS
3,045 -

RFQ

IXTH150N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 7.2mOhm @ 75A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 5500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT50N60P3

IXFT50N60P3

MOSFET N-CH 600V 50A TO268

IXYS
300 -

RFQ

IXFT50N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 145mOhm @ 500mA, 10V 5V @ 4mA 94 nC @ 10 V ±30V 6300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT170N10P

IXTT170N10P

MOSFET N-CH 100V 170A TO268

IXYS
3,243 -

RFQ

IXTT170N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH72N30X3

IXFH72N30X3

MOSFET N-CH 300V 72A TO247

IXYS
3,590 -

RFQ

IXFH72N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ140N20X3

IXFQ140N20X3

MOSFET N-CH 200V 140A TO3P

IXYS
2,827 -

RFQ

IXFQ140N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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