Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH2N170D2

IXTH2N170D2

MOSFET N-CH 1700V 2A TO247

IXYS
2,549 -

RFQ

IXTH2N170D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1700 V 2A (Tj) 0V 6.5Ohm @ 1A, 0V - 110 nC @ 5 V ±20V 3650 pF @ 10 V Depletion Mode 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR64N60P

IXFR64N60P

MOSFET N-CH 600V 36A ISOPLUS247

IXYS
3,695 -

RFQ

IXFR64N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 105mOhm @ 32A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT68P20T

IXTT68P20T

MOSFET P-CH 200V 68A TO268

IXYS
2,829 -

RFQ

IXTT68P20T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 68A (Tc) 10V 55mOhm @ 34A, 10V 4V @ 250µA 380 nC @ 10 V ±15V 33400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX420N10T

IXFX420N10T

MOSFET N-CH 100V 420A PLUS247-3

IXYS
3,058 -

RFQ

IXFX420N10T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH40N50Q

IXFH40N50Q

MOSFET N-CH 500V 40A TO247AD

IXYS
2,010 -

RFQ

IXFH40N50Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 140mOhm @ 500mA, 10V 4.5V @ 4mA 130 nC @ 10 V ±30V 3800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N25X3

IXFK170N25X3

MOSFET N-CH 250V 170A TO264

IXYS
2,806 -

RFQ

IXFK170N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH7P50

IXTH7P50

MOSFET P-CH 500V 7A TO247

IXYS
2,855 -

RFQ

IXTH7P50

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1.5Ohm @ 500mA, 10V 5V @ 250µA 130 nC @ 10 V ±20V 3400 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH88N30P

IXFH88N30P

MOSFET N-CH 300V 88A TO247AD

IXYS
3,856 -

RFQ

IXFH88N30P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK140N30P

IXFK140N30P

MOSFET N-CH 300V 140A TO264AA

IXYS
2,714 -

RFQ

IXFK140N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N50P

IXFK80N50P

MOSFET N-CH 500V 80A TO264AA

IXYS
2,002 -

RFQ

IXFK80N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX140N30P

IXFX140N30P

MOSFET N-CH 300V 140A PLUS247-3

IXYS
3,870 -

RFQ

IXFX140N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK150N30X3

IXFK150N30X3

MOSFET N-CH 300V 150A TO264

IXYS
3,342 -

RFQ

IXFK150N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH12N100L

IXTH12N100L

MOSFET N-CH 1000V 12A TO247

IXYS
3,100 -

RFQ

IXTH12N100L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 20V 1.3Ohm @ 500mA, 20V 5V @ 250µA 155 nC @ 20 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK32N100X

IXFK32N100X

MOSFET N-CH 1000V 32A TO264

IXYS
3,474 -

RFQ

IXFK32N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 220mOhm @ 16A, 10V 6V @ 4mA 130 nC @ 10 V ±30V 4075 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX94N50P2

IXFX94N50P2

MOSFET N-CH 500V 94A PLUS247-3

IXYS
2,070 -

RFQ

IXFX94N50P2

Ficha técnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 94A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK120N25P

IXTK120N25P

MOSFET N-CH 250V 120A TO264

IXYS
3,430 -

RFQ

IXTK120N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTX120N65X2

IXTX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

IXYS
2,545 -

RFQ

IXTX120N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 4.5V @ 8mA 240 nC @ 10 V ±30V 13600 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK120N65X2

IXTK120N65X2

MOSFET N-CH 650V 120A TO264

IXYS
3,480 -

RFQ

IXTK120N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 4.5V @ 8mA 240 nC @ 10 V ±30V 13600 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N15P

IXFX180N15P

MOSFET N-CH 150V 180A PLUS247-3

IXYS
120 -

RFQ

IXFX180N15P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 180A (Tc) 10V 11mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR80N50P

IXFR80N50P

MOSFET N-CH 500V 45A ISOPLUS247

IXYS
3,532 -

RFQ

IXFR80N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 72mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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