Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP72N20X3M

IXFP72N20X3M

MOSFET N-CH 200V 72A TO220

IXYS
2,593 -

RFQ

IXFP72N20X3M

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N10P

IXFK170N10P

MOSFET N-CH 100V 170A TO264AA

IXYS
2,136 -

RFQ

IXFK170N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 4mA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT100N25P

IXTT100N25P

MOSFET N-CH 250V 100A TO268

IXYS
2,133 -

RFQ

IXTT100N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 24mOhm @ 50A, 10V 5V @ 250µA 185 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH70N20Q3

IXFH70N20Q3

MOSFET N-CH 200V 70A TO247AD

IXYS
2,809 -

RFQ

IXFH70N20Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 200 V 70A (Tc) 10V 40mOhm @ 35A, 10V 6.5V @ 4mA 67 nC @ 10 V ±20V 3150 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH150N25X3

IXFH150N25X3

MOSFET N-CH 250V 150A TO247

IXYS
3,612 -

RFQ

IXFH150N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN102N30P

IXFN102N30P

MOSFET N-CH 300V 88A SOT227B

IXYS
2,116 -

RFQ

IXFN102N30P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX120P20T

IXTX120P20T

MOSFET P-CH 200V 120A PLUS247-3

IXYS
3,824 -

RFQ

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) - 30mOhm @ 60A, 10V 4.5V @ 250µA 740 nC @ 10 V - 73000 pF @ 25 V - - - Through Hole
IXFB100N50P

IXFB100N50P

MOSFET N-CH 500V 100A PLUS264

IXYS
3,255 -

RFQ

IXFB100N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 100A (Tc) 10V 49mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 1890W (Tc) - Through Hole
IXFA56N30X3

IXFA56N30X3

MOSFET N-CH 300V 56A TO263AA

IXYS
2,420 -

RFQ

IXFA56N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP150N15X4

IXTP150N15X4

MOSFET N-CH 150V 150A TO220

IXYS
3,676 -

RFQ

IXTP150N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 7.2mOhm @ 75A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 5500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH64N10L2

IXTH64N10L2

MOSFET N-CH 100V 64A TO247

IXYS
2,813 -

RFQ

IXTH64N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 10V 32mOhm @ 32A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 3620 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH16N80P

IXFH16N80P

MOSFET N-CH 800V 16A TO247AD

IXYS
3,036 -

RFQ

IXFH16N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 600mOhm @ 500mA, 10V 5V @ 4mA 71 nC @ 10 V ±30V 4600 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH26N60P

IXFH26N60P

MOSFET N-CH 600V 26A TO247AD

IXYS
2,591 -

RFQ

IXFH26N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 4mA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH130N20T

IXTH130N20T

MOSFET N-CH 200V 130A TO247

IXYS
2,738 -

RFQ

IXTH130N20T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 1mA 150 nC @ 10 V ±20V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ82N25P

IXTQ82N25P

MOSFET N-CH 250V 82A TO3P

IXYS
3,914 -

RFQ

IXTQ82N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ96N20P

IXTQ96N20P

MOSFET N-CH 200V 96A TO3P

IXYS
3,357 -

RFQ

IXTQ96N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH1N200P3HV

IXTH1N200P3HV

MOSFET N-CH 2000V 1A TO247HV

IXYS
3,045 -

RFQ

IXTH1N200P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 23.5 nC @ 10 V ±20V 646 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH90N20X3

IXFH90N20X3

MOSFET N-CH 200V 90A TO247

IXYS
3,154 -

RFQ

IXFH90N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP80N25X3

IXFP80N25X3

MOSFET N-CH 250V 80A TO220AB

IXYS
2,633 -

RFQ

IXFP80N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 80A (Tc) 10V 16mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA3N120

IXFA3N120

MOSFET N-CH 1200V 3A TO263

IXYS
2,614 -

RFQ

IXFA3N120

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 2427 Record«Prev1... 3839404142434445...122Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario