Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFQ120N25X3

IXFQ120N25X3

MOSFET N-CHANNEL 250V 120A TO3P

IXYS
2,218 -

RFQ

IXFQ120N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH62N65X2

IXTH62N65X2

MOSFET N-CH 650V 62A TO247

IXYS
2,320 -

RFQ

IXTH62N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 62A (Tc) 10V 52mOhm @ 31A, 10V 4.5V @ 4mA 104 nC @ 10 V ±30V 5940 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH88N30P

IXTH88N30P

MOSFET N-CH 300V 88A TO247

IXYS
2,947 -

RFQ

IXTH88N30P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 250µA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH120N20P

IXFH120N20P

MOSFET N-CH 200V 120A TO247AD

IXYS
2,035 -

RFQ

IXFH120N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 22mOhm @ 500mA, 10V 5V @ 4mA 152 nC @ 10 V ±20V 6000 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH170N10P

IXFH170N10P

MOSFET N-CH 100V 170A TO247AD

IXYS
2,851 -

RFQ

IXFH170N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 4mA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK44N50P

IXFK44N50P

MOSFET N-CH 500V 44A TO264AA

IXYS
2,186 -

RFQ

IXFK44N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH60N65X2

IXFH60N65X2

MOSFET N-CH 650V 60A TO247

IXYS
2,488 -

RFQ

IXFH60N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5.5V @ 4mA 107 nC @ 10 V ±30V 6180 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH69N30P

IXFH69N30P

MOSFET N-CH 300V 69A TO247AD

IXYS
3,883 -

RFQ

IXFH69N30P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 4mA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH130N15X4

IXTH130N15X4

MOSFET N-CH 150V 130A TO247

IXYS
2,101 -

RFQ

IXTH130N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8.5mOhm @ 70A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N80P

IXFH24N80P

MOSFET N-CH 800V 24A TO247AD

IXYS
2,653 -

RFQ

IXFH24N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 400mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH6N120

IXTH6N120

MOSFET N-CH 1200V 6A TO247

IXYS
3,404 -

RFQ

IXTH6N120

Ficha técnica

Box - Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.6Ohm @ 3A, 10V 5V @ 250µA 56 nC @ 10 V ±20V 1950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N100P

IXFH20N100P

MOSFET N-CH 1000V 20A TO247AD

IXYS
2,441 -

RFQ

IXFH20N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 126 nC @ 10 V ±30V 7300 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH120N25X3

IXFH120N25X3

MOSFET N-CH 250V 120A TO247

IXYS
2,105 -

RFQ

IXFH120N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH140N20X3

IXFH140N20X3

MOSFET N-CH 200V 140A TO247

IXYS
2,312 -

RFQ

IXFH140N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH80N65X2

IXTH80N65X2

MOSFET N-CH 650V 80A TO247

IXYS
2,238 -

RFQ

IXTH80N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 4.5V @ 4mA 144 nC @ 10 V ±30V 7753 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH40N85X

IXFH40N85X

MOSFET N-CH 850V 40A TO247

IXYS
3,038 -

RFQ

IXFH40N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 40A (Tc) 10V 145mOhm @ 500mA, 10V 5.5V @ 4mA 98 nC @ 10 V ±30V 3700 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK64N60P3

IXFK64N60P3

MOSFET N-CH 600V 64A TO264AA

IXYS
3,256 -

RFQ

IXFK64N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 5V @ 4mA 145 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK220N17T2

IXFK220N17T2

MOSFET N-CH 170V 220A TO264AA

IXYS
2,857 -

RFQ

IXFK220N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 220A (Tc) 10V 6.3mOhm @ 60A, 10V 5V @ 8mA 500 nC @ 10 V ±20V 31000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH2N150L

IXTH2N150L

MOSFET N-CH 1500V 2A TO247

IXYS
2,015 -

RFQ

IXTH2N150L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1500 V 2A (Tc) 20V 15Ohm @ 1A, 20V 8.5V @ 250µA 72 nC @ 20 V ±30V 1470 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT100N30X3HV

IXFT100N30X3HV

MOSFET N-CH 300V 100A TO268HV

IXYS
2,523 -

RFQ

IXFT100N30X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 13.5mOhm @ 50A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7660 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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