Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH58N20Q

IXFH58N20Q

MOSFET N-CH 200V 58A TO247AD

IXYS
3,876 -

RFQ

IXFH58N20Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N10Q

IXFH80N10Q

MOSFET N-CH 100V 80A TO-247AD

IXYS
3,166 -

RFQ

IXFH80N10Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 40A, 10V 4V @ 4mA 180 nC @ 10 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK55N50

IXFK55N50

MOSFET N-CH 500V 55A TO264AA

IXYS
2,200 -

RFQ

IXFK55N50

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 90mOhm @ 27.5A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N50

IXFN44N50

MOSFET N-CH 500V 44A SOT-227B

IXYS
3,504 -

RFQ

IXFN44N50

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 120mOhm @ 500mA, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX15N100

IXFX15N100

MOSFET N-CH 1000V 15A PLUS247-3

IXYS
2,921 -

RFQ

IXFX15N100

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 700mOhm @ 7.5A, 10V 4.5V @ 4mA 220 nC @ 10 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX55N50

IXFX55N50

MOSFET N-CH 500V 55A PLUS247-3

IXYS
2,090 -

RFQ

IXFX55N50

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 80mOhm @ 500mA, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH5N100A

IXTH5N100A

MOSFET N-CH 1000V 5A TO247

IXYS
3,619 -

RFQ

IXTH5N100A

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2Ohm @ 2.5A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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