Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK120N65X2

IXFK120N65X2

MOSFET N-CH 650V 120A TO264

IXYS
3,220 -

RFQ

IXFK120N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB132N50P3

IXFB132N50P3

MOSFET N-CH 500V 132A PLUS264

IXYS
3,503 -

RFQ

IXFB132N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 132A (Tc) 10V 39mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB110N60P3

IXFB110N60P3

MOSFET N-CH 600V 110A PLUS264

IXYS
3,858 -

RFQ

IXFB110N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 110A (Tc) 10V 56mOhm @ 55A, 10V 5V @ 8mA 245 nC @ 10 V ±30V 18000 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX230N20T

IXFX230N20T

MOSFET N-CH 200V 230A PLUS247-3

IXYS
2,314 -

RFQ

IXFX230N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 230A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1670W (Tc) - Through Hole
IXFB82N60P

IXFB82N60P

MOSFET N-CH 600V 82A PLUS264

IXYS
2,486 -

RFQ

IXFB82N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 82A (Tc) 10V 75mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N80P

IXFN44N80P

MOSFET N-CH 800V 39A SOT-227B

IXYS
2,715 -

RFQ

IXFN44N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 39A (Tc) 10V 190mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK32N100Q3

IXFK32N100Q3

MOSFET N-CH 1000V 32A TO264AA

IXYS
2,116 -

RFQ

IXFK32N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX240N25X3

IXFX240N25X3

MOSFET N-CH 250V 240A PLUS247-3

IXYS
690 -

RFQ

IXFX240N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX300N20X3

IXFX300N20X3

MOSFET N-CH 200V 300A PLUS247-3

IXYS
2,436 -

RFQ

IXFX300N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 4mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX210N30X3

IXFX210N30X3

MOSFET N-CH 300V 210A PLUS247-3

IXYS
3,831 -

RFQ

IXFX210N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 5.5mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK52N100X

IXFK52N100X

MOSFET N-CH 1000V 52A TO264

IXYS
3,199 -

RFQ

IXFK52N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 52A (Tc) 10V 125mOhm @ 26A, 10V 6V @ 4mA 245 nC @ 10 V ±30V 6725 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR80N50Q3

IXFR80N50Q3

MOSFET N-CH 500V 50A ISOPLUS247

IXYS
2,749 -

RFQ

IXFR80N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 72mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN220N20X3

IXFN220N20X3

MOSFET N-CH 200V 160A SOT227B

IXYS
2,145 -

RFQ

IXFN220N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 160A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFH150N30X3

IXFH150N30X3

MOSFET N-CH 300V 150A TO247

IXYS
3,131 -

RFQ

IXFH150N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX60N50L2

IXTX60N50L2

MOSFET N-CH 500V 60A PLUS247-3

IXYS
1,350 -

RFQ

IXTX60N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 4.5V @ 250µA 610 nC @ 10 V ±30V 24000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN230N20T

IXFN230N20T

MOSFET N-CH 200V 220A SOT227B

IXYS
3,798 -

RFQ

IXFN230N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1090W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFB90N85X

IXFB90N85X

MOSFET N-CH 850V 90A PLUS264

IXYS
3,463 -

RFQ

IXFB90N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 90A (Tc) 10V 41mOhm @ 500mA, 10V 5.5V @ 8mA 340 nC @ 10 V ±30V 13300 pF @ 25 V - 1785W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT240N15X4HV

IXTT240N15X4HV

MOSFET N-CH 150V 240A TO268HV

IXYS
2,897 -

RFQ

IXTT240N15X4HV

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFB62N80Q3

IXFB62N80Q3

MOSFET N-CH 800V 62A PLUS264

IXYS
3,787 -

RFQ

IXFB62N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 62A (Tc) 10V 140mOhm @ 31A, 10V 6.5V @ 8mA 270 nC @ 10 V ±30V 13600 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN550N055T2

IXTN550N055T2

MOSFET N-CH 55V 550A SOT227B

IXYS
2,647 -

RFQ

IXTN550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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