Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP14N85XM

IXFP14N85XM

MOSFET N-CHANNEL 850V 14A TO220

IXYS
2,872 -

RFQ

IXFP14N85XM

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH22N65X2

IXFH22N65X2

MOSFET N-CH 650V 22A TO247

IXYS
3,108 -

RFQ

IXFH22N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ200N10T

IXTQ200N10T

MOSFET N-CH 100V 200A TO3P

IXYS
3,575 -

RFQ

IXTQ200N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 5.5mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±30V 9400 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ36P15P

IXTQ36P15P

MOSFET P-CH 150V 36A TO3P

IXYS
3,760 -

RFQ

IXTQ36P15P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP90N20X3

IXFP90N20X3

MOSFET N-CH 200V 90A TO220

IXYS
2,825 -

RFQ

IXFP90N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH110N10P

IXFH110N10P

MOSFET N-CH 100V 110A TO247AD

IXYS
3,411 -

RFQ

IXFH110N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH52N30P

IXFH52N30P

MOSFET N-CH 300V 52A TO247AD

IXYS
2,534 -

RFQ

IXFH52N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH140N10P

IXFH140N10P

MOSFET N-CH 100V 140A TO247AD

IXYS
2,489 -

RFQ

IXFH140N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP72N30X3

IXFP72N30X3

MOSFET N-CH 300V 72A TO220AB

IXYS
3,483 -

RFQ

IXFP72N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH140P05T

IXTH140P05T

MOSFET P-CH 50V 140A TO247

IXYS
3,946 -

RFQ

IXTH140P05T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP72N30X3M

IXFP72N30X3M

MOSFET N-CH 300V 72A TO220

IXYS
3,280 -

RFQ

IXFP72N30X3M

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N50D2

IXTP6N50D2

MOSFET N-CH 500V 6A TO220AB

IXYS
2,564 -

RFQ

IXTP6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N100D2

IXTP6N100D2

MOSFET N-CH 1000V 6A TO220AB

IXYS
2,978 -

RFQ

IXTP6N100D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH26N50P3

IXFH26N50P3

MOSFET N-CH 500V 26A TO247AD

IXYS
3,069 -

RFQ

IXFH26N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH260N055T2

IXTH260N055T2

MOSFET N-CH 55V 260A TO247

IXYS
2,725 -

RFQ

IXTH260N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH120P065T

IXTH120P065T

MOSFET P-CH 65V 120A TO247

IXYS
3,299 -

RFQ

IXTH120P065T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA6N100D2

IXTA6N100D2

MOSFET N-CH 1000V 6A TO263

IXYS
2,044 -

RFQ

IXTA6N100D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP60N25X3

IXFP60N25X3

MOSFET N-CH 250V 60A TO220AB

IXYS
2,810 -

RFQ

IXFP60N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA22N65X2

IXFA22N65X2

MOSFET N-CH 650V 22A TO263

IXYS
900 -

RFQ

IXFA22N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA60N25X3

IXFA60N25X3

MOSFET N-CH 250V 60A TO263AA

IXYS
2,867 -

RFQ

IXFA60N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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